Transcript ppt

ESE370:
Circuit-Level
Modeling, Design, and Optimization
for Digital Systems
Day 12: September 24, 2014
MOS Transistor Details
Capacitance
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Penn ESE370 Fall2014 -- DeHon
Last Time
• Focused on I vs V relationships
– Effective resistance
– Steady state
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Today
• Capacitance
– Model refinement
• Region Example?
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Capacitance
• First order: looks like a capacitor
gate
drain
src
channel
• Today:
– Like resistance, it is not constant
– Capacitance not just to gnd (drain)
Penn ESE370 Fall2014 -- DeHon
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Capacitance Setup
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Capacitance
• Claimed looked like a capacitor to ground
• …but ground isn’t really one of our terminals
– Don’t connect directly to it.
– …source and body are often at ground…
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Capacitance
• Four Terminals
• How many combinations?
– 4 things taken 2 at a time?
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Capacitances
• GS, GB, GD, SB, DB, SD
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Moving Plates?
• What is distance from gate to conductor?
– Depletion?
– Strong Inversion?
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Capacitance Decomposition
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Overlap
• What is the capacitive implication of
gate/src and gate/drain overlap?
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Overlap
• Length of overlap?
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Overlap Capacitance
A
C   r 0
d
Co   ox


W L drawn Leffective /2
t ox
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Overlap Capacitance
A
C   r 0
d
W L
C 
drawn
o
ox


COX 
tOX

Leffective /2
t ox

Co  CoxW L drawn Leffective /2
Penn ESE370 Fall2014 -- DeHon
OX
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Capacitance in Strong Inversion
(easy case)
• Looks like parallel plate Gate – Channel
– What is CGC?
– What is CGB?
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Capacitance in Strong Inversion
• Looks like parallel plate Gate – Channel
– CGC
– CGB=0
CGC  CoxWLeffective

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Capacitance in Strong Inversion
• But channel isn’t a terminal
– Split evenly with source and drain
CGC  CoxWLeffective
CGCS  CGCD  0.5CoxWLeffective

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Capacitance in Strong Inversion
• Add in Overlap capacitance
CGCS  CGCD  0.5CoxWLeffective


Co  CoxW L drawn Leffective /2
CGS  CGSC  CO  0.5CoxWLdrawn

Penn ESE370 Fall2014 -- DeHon
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Channel Evolution
Subthreshold
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Capacitance Depletion
• What happens to capacitance here?
– Capacitor plate distance?
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Capacitance Depletion
• Capacitance becomes Gate-Body
• Capacitance drops as
Vgs increases toward
Vth
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Capacitance vs VGS
CGC
WLCOX
CGCS=CGCD
0.5WLCOX
CGCB
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Saturation Capacitance?
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Saturation Capacitance?
• Source end of channel in inversion
• Destination end of channel at or below
threshold
• Capacitance shifts to source
– Total capacitance reduced
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Saturation Capacitance
CGC
WLCOX
(2/3)WLCOX
CGCS
CGCD
0.5WLCOX
0
VDS/(VGS-VT)
1
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Contact Capacitance
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Contact Capacitance
• n+ contacts are formed by doping = diffusion
• Depletion under contact
– Contact-Body capacitance
• Depletion around perimeter of contact
– Also contact-Body capacitance
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Contact/Diffusion Capacitance
• Cj – diffusion depletion
• Cjsw – sidewall capacitance
• LS – length of diffusion
LS
Cdiff  C j LSW  C jsw 2LS  W 
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Capacitance Roundup
•
•
•
•
•
CGS=CGCS+CO
CGD=CGCD+CO
CGB=CGCB
CSB=Cdiff
CDB=Cdiff
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One Implication
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Step Response?
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Step Response
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Impact of CGD
• What does CGD do to the switching
response here?
– V2
– Vout
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Impact of CGD
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Idea
• Capacitance
– To every terminal
– Voltage dependent
CGC
CGCS
CGCB
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Approach
• Identify Region
• Drives governing equations
• Use to understand operation
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Admin
•
•
•
•
HW4 due Thursday
Make sure read 3.3
Lecture Friday
Midterm 1 on Monday
– Ron review on Sunday
– No lecture at noon – André office hour
– Exam 7-9pm (Towne 303)
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