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In summary, indicating that the graded AlGaN layer can effectively improve the capability of hole transportation across the EBL as well as the electron confinement. Simulation results of the redesigned LED with graded AlGaN layer show a significant increase of 106.6% in the light output power at 80 mA, compared with the conventional LED. The appropriate control of the graded AlGaN layer is beneficial for improving the optical performance of blue LEDs mainly because of the reduced polarization effect at the LB/EBL interface. 1 [1] C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, " Hole injection and efficiency droop improvement in InGaN/GaN lightemitting diodes by band-engineered electron blocking layer, " Appl. Phys. Lett. 97, 261103, 2010. [2] S.-H. Han, D.-Y. Lee, S.-J. Lee, C.-Y. Cho, M.-K. Kwon, S. P. Lee, D. Y. Noh, D.-J. Kim, Y. C. Kim, and S.-J. Park, "Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes," Appl. Phys. Lett., vol. 94, p. 231123, 2009. 2