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In summary, indicating that the graded AlGaN layer can
effectively improve the capability of hole transportation across
the EBL as well as the electron confinement.
Simulation results of the redesigned LED with graded AlGaN
layer show a significant increase of 106.6% in the light output
power at 80 mA, compared with the conventional LED.
The appropriate control of the graded AlGaN layer is beneficial
for improving the optical performance of blue LEDs mainly
because of the reduced polarization effect at the LB/EBL
interface.
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[1] C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li,
Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, " Hole
injection and efficiency droop improvement in InGaN/GaN lightemitting diodes by band-engineered electron blocking layer, " Appl.
Phys. Lett. 97, 261103, 2010.
[2] S.-H. Han, D.-Y. Lee, S.-J. Lee, C.-Y. Cho, M.-K. Kwon, S. P. Lee,
D. Y. Noh, D.-J. Kim, Y. C. Kim, and S.-J. Park, "Effect of electron
blocking layer on efficiency droop in InGaN/GaN multiple quantum
well light-emitting diodes," Appl. Phys. Lett., vol. 94, p. 231123, 2009.
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