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版權所有 翻印必究 報 告 人:王禮國 指導老師:林克默 博士 日 期:2012.01.09 2012/1/9 1 版權所有 翻印必究 Introduction • 隨著n-type 基材具有高少數載子壽命之後,已可製作 出高效率背接觸背結(back-contact back-junction,BC-BJ) 之太陽能電池。 • 在SunPower Corp.發展出24.2 %BC-BJ大面積模組後, Gong et al. and Bock et al. recently introduced a BC-BJ cell with an aluminum-alloyed emitter,效率分別為19.1 %和 19 %。 • Fig. 1. Schematic cross-section of the cell structure. The rear structuring and metallization were realized by screenprinting. 2012/1/9 2 版權所有 翻印必究 Experimental 1. Contacting deep driven-in phosphorus profile • 為了在BC - BJ太陽能電池達到高效率,降低前表面複合 速率是必需的,利用磷擴散後的很長的熱氧化過程,驅動 (driven-in)磷擴散前表面場,可以達到非常低的前表面飽和電 流密度J0 ,但同時還有背表面場在作用,這會導致磷的表面 濃度減少。 • 為了確定矽表面和絲網印刷銀膠具體的接觸電阻,在不同 的工作表面設計三種不同的磷擴散過程,將晶圓上磷矽玻璃 去除和清潔後,在1050 ° C,氧化1 hr,並且在晶圓上,與銀 膠接觸位置,利用蝕刻製作放置量測傳輸線的溝槽,以量測 具體接觸電阻。 • 改變帶爐之燒結速率,與標準速度做比較,進行改善太 陽能電池。 2012/1/9 3 版權所有 翻印必究 2. Solar cell • Fig. 2. A scan of the rear of the finally processed wafer. Three 50 × 50 mm2 cells with finger contacts and varying emitter coverage and one point contact cell are visible. At the top and bottom of the wafer the TLM structures were processed. Test structures for measuring the doping profiles are placed at the sides of the wafer. 2012/1/9 4 版權所有 翻印必究 Results and discussion 2012/1/9 5 版權所有 翻印必究 • Fig. 5. SEM analysis of Ag contacts on P-diffused Si. After firing of the screen-printed Ag contacts, the “bulk silver” was etched off in an HNO3 solution. The glass was then removed in HF, in order to give access to the Ag crystallites on the P-diffused Si surface. For an increasing Rsh, the Ag crystallite density decreases (same magnification for the three pictures). 2012/1/9 6 版權所有 翻印必究 2012/1/9 7 版權所有 翻印必究 結論 • 本研究分析市售矽晶片網印銀膠之接觸電阻,發現在表面有 較高的磷擴散濃度與帶爐以中速之燒結速度運行,可以有效 降低表面電阻1 mΩ /cm2。 • 高效率背接觸後結太陽能電池與背面全網印和鋁合金射極處 理,Efficiencies of up to 19.7% applying a short oxidation process and 20.0% using a long oxidation process are reached. Both efficiencies are confirmed by Fraunhofer ISE CalLab. The internal quantum efficiency shows a very good front but an improvable rear side. 2012/1/9 8 版權所有 翻印必究 • 為提高太陽能電池效率,而對目前結構進行優化: 1. 鈍化射極,提高Voc。 2. 減少晶圓厚度,the screen design optimized,藉此增加射極覆 蓋率,並因此提高Jsc。 3. 在3 Ωcm範圍內,高摻雜Cz材料將能夠增加FF。 4. Well conducting silver fingers and thick and widely printed aluminum fingers will allow the upscaling to large area cells. 2012/1/9 9 版權所有 翻印必究 Thank you for your attention 2012/1/9 10