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Experimental
p-pad
ITO
p-GaN
p-Al0.15GaN0.85
MQW
n-GaN
Buffer layer
Sapphire
Chip size：320μm* 320μm
n-pad
Fig.1 Schematic view of an InGaN/GaN LED
structure.
Fig.2 Three-dimensional circuit
modeling of a LED structure.
l (1 qN ) l
R  R sh 
w
t
w
Rsh：sheet resistance
L：length
w：width
t：thickness
N：carrier concentration
μ：carrier mobility
RESULTS AND DISCUSSION
Simulation and experimental
Fig.3 (a) Calculated light emission pattern. (b) Numeric data of
the measured light emission intensity at the injection current of
50 μA. The chip size is 320 μm × 320 μm.