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Cheng-Liang Wang , Ming-Chang Tsai , Jyh-Rong Gong , Wei-Tsai Liao , PingYuan Lin ,Kuo-Yi Yen , Chia-Chi Chang, Hsin-Yueh Lin , Shen-Kwang Hwang.
Reporter: W.C.Jian
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1. Introduction
2. Experiments
3. Result and Discussion
4. Conclusion
5. References
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 III-nitride LEDs grown on sapphire substrates
usually contain a high density of threading
dislocations (TDs).
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SPSL
Al0.3Ga0.7N/GaN
2nm : 2nm
MQW(Five Pair)
In0.2Ga0.8N/GaN:2.5nm : 17.5nm
TCL
1組 = 5 pair
p-GaN
Sample A : 沒加
Sample B : 1組
Sample C : 2組
Sample D : 3組
n- GaN
u-GaN
Buffer layer
5 pair
sapphire
u-Gan 0.25um
5 pair
no : 5 x 108
po : 1 x 107
Chip size :
300um x 300um
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Semilogarithmic I–V plots of the forward-biased In0.2Ga0.8N/GaN MQW LEDs
having (a) zero-set, (b) one-set, (c) two-set, and (d) three-set Al0.3Ga0.7N/GaN
SPSL insertion.
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