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Plot of the relation between I(dV=dI) and I. Open circular and
open square dots denote data from the I–V results and solid
line is the fitting curve obtained using (1).
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n is the ideality factor
K is Boltzman constant
Rs is Series resistance
Normal LED is 7.7 Ω
PI LED is 3.8 Ω
2
Optical output power-current-peak wavelength
characteristics of normal and PI LEDs.
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Conclusion

Low p-contact resistance of LEDs causes an
increase of current injection efficiency and a
decrease of current crowding effect.

High-current stability of the output power and
peak wavelength of the PI LEDs .
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Reference
[1] S. Nakamura, S. Senoh, N. Iwasa, and S. Nagahama, “High-brightness
InGaN blue, green and yellow light-emitting diodes with quantum well
structures,” Jpn. J. Appl. Phys., vol. 34, pp. L797–L799, Jul. 1995.
[2] Y. Nakano and T. Jimbo, “Electrical characterization of acceptor levels
in Mg-doped GaN,” J. Appl. Phys., vol. 92, pp. 5590–5592, Nov. 2002.
[3] X. Guo and E. F. Schubert, “Current crowding and optical saturation
effects in GaInN/GaN light emitting diodes grown on insulating substrates,”
Appl. Phys. Lett., vol. 78, pp. 3337–3339, May 2001.
[4] J. K. Sheu, G. C. Chi, and M. J. Jou, “Low-operation voltage
of InGaN/GaN light-emitting diodes by using a Mg-doped
Al Ga N/GaN superlattice layers,” IEEE Electron. Device
Lett., vol. 22, no. 4, pp. 160–162, Apr. 2001.
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