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High-Brightness InGaN–GaN Power Flip-Chip LEDs
Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai,
Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin
JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 12, JUNE 15, 2009
Sum DJ
Outline
• Introduction
• Experiment
• Results and discussion
• Conclusion
• References
Introduction
• In this work, we report the fabrication of
InGaN–GaN power flip-chip (FC) LEDs
using grinding to rough the backside
surface of sapphire substrate.
Experiment
Ag(200nm)
Ni(1nm)
p+-GaN(0.25µm) @ 1050ºC
EBL p-Al0.15Ga0.85N(50nm) @1050ºC
n+-GaN(3µm) @ 1050ºC
ITO(15nm)
SPS five-period
In0.23Ga0.77N (5Å)/GaN(5Å) @1050ºC
MQW five-period
In0.23Ga0.77N(3nm)/GaN(7nm) @770ºC
Ti/Al/Ti/Au
GaN nucleation layer (50nm) @ 550ºC
Sapphire (2-inch)
chip size：1mm × 1mm
Results and discussion
Results and discussion
Results and discussion
Results and discussion
Results and discussion
455nm
Results and discussion
700mA
LED-I：366.5mW
LED- II：271.8mW
LED-III ：185.1mW
@700mA
Results and discussion
0.35A
Results and discussion
Conclusion
• We can achieve a 200 times larger peak-tovalley distance on the backside sapphire
substrate by conventional lapping/polishing.
• It was also found that we can simultaneously
enhance output power and improve device
reliability by roughening sapphire backside
surface of the power FC LEDs.
References
•
Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T.
Kuo, T. K. Ko, C. F. Shen, J. M. Tsai,Wei-Chi Lai, Jinn-Kong Sheu,
and A. J. Lin“High-Brightness InGaN–GaN Power Flip-Chip
LEDs,” J. Lightwave Technol. VOL. 27, NO. 12, JUNE 15, 2009
• Thanks for your attention !