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Enhanced characteristics of blue InGaN/GaN lightemitting diodes by using selective activation to modulate
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the lateral current spreading length
Shoou-Jinn, Ray-Ming Lin, Yuan-Chieh Lu, Yi-Lun Chou, Guo-Hsing Chen,
Yung-Hsiang Lin,and Meng-Chyi Wu.
APPLIED PHYSICS LETTERS 92, 261105 2008
B.J Hu
Out Line
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I.
Introduction..………………………………… 3
II.
Experimental……………………………....... 4-5
III. Results and Discussion………………………. 6-8
IV. Conclusion…………………………………… 9
V. References……………………………………. 10
Introduction
High resistive regions are formed by diffusion of Ti and depth of high
resistive region from the p-GaN surface depends on the capped Ti film
thickness. Selective activation of the Mg-doped GaN layer could be used to
modulate the length of the lateral current path.
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Experimental
p-transparent
p-GaN(1μm)
MQW
n-GaN
u-GaN （2μm)
30nm-Buffer layer
sapphire
High ressistive region
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