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Results and Discussion
354nm ; 0.131A/W
357nm ; 0.129A/W
356nm ; 0,13 A/W
Spectral responsivities of nitride-based p-i-n bandpass photodetectors
at room temperature.
η：quantum efficiency（量子效率）
R：measured responsivity（響應）
-19
×
q ：electron charge（基本電荷1.62 10 ）
λ：incident light wavelength（入射光波長）
-32
h ：Planck constant（普郎克常數6.62 ×10 ）
10
c ：speed of light（光速率2.99 ×10 ）
by：
Sample A
-19
×
354 × 10 ）／（6.626 × 10
-19
×
357 × 10 ）／（6.626 × 10
0.131= η × （ 1.6 × 10
η = 0.46 × 100％≒46 ％
-9
-34
×
2.99 ×10 ）
8
-9
-34
×
2.99 ×10 ）
Sample B
0.129= η × （ 1.6 × 10
η = 0.45 × 100％≒45 ％
8
Sample C
-19
-9
0.13= η × （ 1.6 × 10 × 356× 10 ）／（6.626 × 10
η = 0.45 × 100％≒45 ％
-34
×
8
2.99 ×10 ）
Current–voltage characteristics of the nitride-based p-i-n bandpass
photodetectors at room temperature with fitting curve. R = (dV=dI)
at zero bias.
Conclusion
Nitride-based p-i-n bandpass photodetectors with 60-, 150,and 300nm-thick blocking p-AlGaN layers were successfully fabricated and
characterized. The peak responsivities wereestimated to be 0.131,
0.129, and 0.13 A/W at 354, 357,and 356 nm for 60-, 150-, and 300nm-thick p-Al Ga N blocking layer, respectively, corresponding to a
quantum efficiency of around 46%.