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Results and discussion
Fig. 2. Top view of the power chip LED.
Conclusion
In summary, large size (i.e. 1mm 1mm) nitride-based
power LED with Ni/Au and ITO p-contacts were fabricated.
It was found that the 350mA output power was 84.8mW
(W-P-E = 7:2%) at 460 nm for the power chip with ITO as
p-contacts and Al as back-side reflector.
References
Chia-Sheng CHANG, Shoou-Jinn CHANG, Yan-Kuin SU, Wei-Shou CHEN,
Chien-Fu SHEN, Shih-Chang SHEI1 and Hsin-Ming LO1, “Nitride based Power
Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector, ” Japanese
Journal of Applied Physics Vol. 44, No. 4B, 2005, pp. 2462–2464.