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Noise Characteristics of High-Performance InGaAs
PIN Photodiodes Prepared by MOCVD
Yung-Sheng Wang,Shoou-Jinn Chang,Yu-Zung Chiou,and Wei Lin
Electrochemical Society, 155 11 J307-J309 2008
YS.Chen
Outline
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Introduction
Experiments
Results and discussion
Conclusion
References
Introduction
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The optical communication network has become an
essential tool in our daily life.
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The optimum wavelength range for long-distance
optical communication is between 1.3 and 1.55 mm .
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In this wavelength range, InGaAs is the most preferred
material for photodetector applications.
Experiments
Figure 1. (a)Top-view photograph and (b)schematic diagram of the
fabricated InGaAs PIN photodiode.
Results and discussion
bark current
-5V ：105pA
-30V ：217pA
Capacitance
-5V ：0.475pF
-20V ：0.385pF
Figure 2. Measured dark I-V and C-V characteristics of the fabricated device.
-5V ： 6.7GHz
-20V ：8.2GHz
Figure 3. Measured frequency responses of the packaged InGaAs PIN photodiode.
-5V
1310nm：71.9%
1550nm：93.6%
-20V
1310nm：72.9%
1550nm：95.2%
Figure 4. Spectra responses of the packaged InGaAs PIN photodiode
Figure 5. Measured noise-power spectra of the fabricated InGaAs PIN photodiode.
Figure 6. Room-temperature noise spectral density as a function of dark
current measured at 100 Hz.
Conclusion
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With −5 V applied bias, it was found that the reverse leakage
current and capacitance of the photodiode were only 105 pA and
0.475 pF, respectively.
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For a given bandwidth of 1 kHz and a given bias of −5 V, it was
found that the NEPs of our InGaAs PIN photodiode were
4.53×10−14 W at 1.31μm and 2.95×10−14 W at 1.55μm,which
correspond to D* values of 3.69×1012 cm Hz0.5 W−1 at 1.31μm
and 5.67×1012 cm Hz0.5 W−1 at 1.55μm.
References
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Yung-Sheng Wang,Shoou-Jinn Chang,Yu-Zung Chiou,and Wei
Lin, “Noise Characteristics of High-Performance InGaAs PIN
Photodiodes Prepared by MOCVD,” Electrochemical Society.,
pp. J307–J309, May. 2008.