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Nitride light-emitting diodes
T Mukai, S Nagahama, N Iwasa, M Senoh and T Yamada
JOURNAL OF PHYSICS: CONDENSED MATTER
YC Chiang
1
Outline


Motive
Experiments



Blue LED
Green LED
Amber LED






InGaN active layer
AlInGaP active layer
UV LED
Results and discussion
Conclusion
Reference
2
Motive



In the discussion of different currents at room
temperature electroluminescence
Discussed under the same current in different
temperature electroluminescence
Discuss the different structure of threading
dislocation
3
Experiments(1/5) <Blue>
Ni/Au
0.5μm 700˚C
0.15μm 1020˚C
300Å 800˚C
<doped Zn>
0.15μm 1020˚C
Ti/Al
4μm 1020˚C
300Å 510˚C
Figure 1. The structure of the InGaN/AlGaN double-heterostructure blue LEDs
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Experiments(2/5) <Green>
Ni/Au
0.5μm
30Å
1000Å
Ti/Al
4μm 1020˚C
300Å 550˚C
Figure 2. The structure of green SQW LEDs.
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Experiments(3/5) <Amber>
p-Electrode <Ni/Au>
p-GaN < 0.2μm >
p-Al0.2Ga0.8N
< 300Å>
InGaN <25Å>
undoped GaN < 400Å>
<Current Spreading Layer>
AlInGaP
n-Electrode <Ti/Al>
n-GaN < 3.3μm >
GaN buffer <300Å 550˚C>
undoped GaN <0.7μm>
Sapphire Substrate
GaAs Substrate (For AlInGaP )
Figure 3. The structure of Amber SQW LEDs.
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Experiments(4/5) <UV>
p-Electrode <Ni/Au>
p-GaN < 0.2μm >
indium composition of
the InGaN well layer is
nearly zero
p-Al0.2Ga0.8N
< 300Å>
InGaN <25Å>
n-Electrode <Ti/Al>
n-GaN < 3.3μm >
GaN buffer <300Å 550˚C>
Sapphire Substrate
Figure 4. The structure of UV LEDs.
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Experiments(5/5)
Wavelength(nm)
FWHM(nm)
External
quantum
efficiency(EQE)
@20mA
Blue LED
<doped Zn>
450
70 (10~40mA)
2.7%
1500μW
SQW
Blue LED
450
20
9.1%
5mW
SQW
Green LED
520
30
6.3%
3mW
Amber LED
594
50
~
~
UV LED
380
~
~
~
Output power
(mW)
@20mA
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Results and discussion(1/9)
In 含量少
點我
比較
1.較差的結晶品質
2.Lattice mismatch
3.Thermal expansion
coefficient(Well
與Barrier之間)
Figure 5. The output power of (a) blue and (b) green SQW
LEDs as functions of the forward current.
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Results and discussion(2/9)
∆ Ec 之 差 , 反 應 侷
限能力的好壞
1.4mW
0.66mW
25
Figure 6. The output power of amber InGaN and AlInGaP LEDs as functions of
the ambient temperature from −30 ˚C to +80 ˚C. The output power of each LED
was normalized to 1.0 at 25 ˚C.
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