Transcript 下載/瀏覽

Advantages of blue InGaN multiplequantum well light-emitting diodes with
InGaN barriers
Yen-Kuang Kuo, Jih-Yuan Chang, Miao-Chan Tsai, and Sheng-Horng Yen
APPLIED PHYSICS LETTERS 95, 011116 (2009)
S.Y.Chiou
1
Outline
‫ﻪ‬
‫ﻪ‬
‫ﻪ‬
‫ﻪ‬
‫ﻪ‬
Introduction
Experimental
Results and Discussion
Conclusion
References
2
Introduction
‫ﻪ‬
‫ﻪ‬
‫ﻪ‬
‫ﻪ‬
1. EBL restiction effect.
2. Crystal lattice-matched.
3. Polarization effect .
4. Droop Effect.
3
Experimental
Cr/Au
P-GaN (1.2×1018)
InGaN/GaN(In0.21Ga0.79N)
P-Al0.15Ga0.85N
5pair MQW [2nm]
InGaN/InGaN(In0.1Ga0.9N)
Cr/Au
n-GaN (5×1018) [4.5μm]
Undoped [50nm]
Sapphire
Chip Size：300×300μm2
4
Results and Discussion
FIG. 1. Color online (a) Experimental and simulated L-I-V performance curves of
original InGaN/GaN structure. (b) istribution of carrier concentrations of original
InGaN/GaN structure at 150 mA gray regions represent the
5
location of QWs.