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Results and discussion
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Results and discussion
Stress：437MPa
Stress：364MPa
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Results and discussion
At 20mA
CSS 3.15V
CSPSS 3.18V
At -10V
CSS -0.23µA
CSPSS -0.46nA
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Results and discussion
At 20mA
CSS 12.2mw
CSPSS 16.5mw
(35% enhancement)
At 20V(Edge)
CSS 6.1mw
CSPSS 6.95mw
(14% enhancement)
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Results and discussion
(227% enhancement)
(72% enhancement)
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Results and discussion
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Results and discussion
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Results and discussion
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Results and discussion
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Results and discussion
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Conclusion
• The ELOG-like mode on a CSPSS
effectively suppresses the probability of
dislocation propagation into the cone
region and, hence, greatly improves the
crystal quality of the GaN films.
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References
•
Jae-Hoon Lee, Senior Member, IEEE, Dong-Yul Lee, BangWon
Oh,
and
Jung-Hee
Lee,
Senior
Member,
IEEE“Comparison of InGaN-Based LEDs
Grown on
Conventional Sapphire and Cone-Shape-Patterned Sapphire
Substrate,” IEEE TRANSACTIONS ON ELECTRON
DEVICES, VOL. 57, NO. 1, JANUARY 2010.
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• Thanks for your attention !
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