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ONE SHOT MAPPING OF MINORITY CARRIER
DIFFUSION LENGTH
IN POLYCRYSTALLINE SILICON SOLAR CELLS
USING ELECTROLUMINESCENCE
Takashi Fuyuki, Hayato Kondo, Yasue Kaji, Tsutomu Yamazaki, Yu
Takahashi, Yukiharu Uraoka
Graduate School of Materials Science, Nara Institute of Science and
Technology
8916-5 Takayama, Ikoma, Nara 630-0192 Japan
Takashi Fuyuki, Hayato Kondo, Yasue Kaji, Tsutomu Yamazaki, Yu
Takahashi, Yukiharu
學號：MA310107
報告者：陳威昇
指導老師：林克默
目錄
摘要
簡介
實驗
排放和討論分析
結論
參考
摘要
• The novel technique of analyzing the spatial distribution of
minority carrier diffusion length was investigated in detail by
utilizing the photographic surveying of electroluminescence
emitted from polycrystalline Si cells. The emitted infrared light
(peak wavelength: 1150 nm) from a sample cell under the
forward bias was captured by a cooled CCD camera. The
intensity was found to be proportional to the minority carrier
diffusion length regardless of the running current density,
which gave the quantitative information of the minority carrier
diffusion length distribution with high reliability. The
deteriorated areas andlor aggregation of defects were
detected by a simple one-shot capturing of the emitted light.
簡介
• Crystalline silicon (Si) solar cells dominate the worldwide
share of photovoltaic systems utilizing the advantages of
stable performance with high efficiency. Polycrystalline Si
(poly-Si) cells using cast substrates have been developed for
long years due to the capability of mass production with low
cost. The improvement of conversion efficiency is strongly
required to fulfill the demand of practical nstallation. The
accurate and quick characterization of material properties is
the key issue to develop the high performance cetls. and
especially, the evaluation of the minority carrier diffusion
length (or lifetime) is essential since it governs the collection
efficiency in the cell.
實驗
排放和討論分析
結論
• The novel technique of analyzing the spatial distribution of
the minority carrier diffusion length by the photographic
surveying method was examined in detail. Under the
'forward bias condition, the cell emits infrared light. The
emission intensity has the one to one relation with the
minority carrier diffusion length, which yields the
quantitative information of the minority carrier diffusion
length distribution. The emission intensity had a superlinear dependence upon the running forward current. The
applicability of proposed technique was discussed.
參考
•
[I] J.A.Eikelboom, C.Leguijt, C.F.A.Frumau and A.R.Burgers; Solar Energy Materials and
Solar Cells, 36, 169 (1 995).
•
[2] 0.Porre. M-Stemmer and M.Pasquinelli; Materials Science and Engineering B. 24, 188
(1994).
•
[3] MSakitani, K.Nishioka, T.Yagi, YYamamoto,
•
Y.lshikawa, Y.Uraoka and T.Fuyuki,
•
Solid State Phenomena, 93, 351 (2003).
•
[4] W. Seifert, M.Kittler and J.Vanhellemont; Materials Science and Engineering B, 42, 260
(1 996).
•
[5] T.Fuyuki. H.Kondo, T.Yamazaki. and Y.Takahashi; Applied Physics Letters (submitted).