Transcript 下載/瀏覽Download

Results and discussion(1/4)
Fig. 3. (a) Log J-V curves of the devices with different thicknesses
(0, 6, and 15 nm) of SiO2 layer. (b) Current densities in log-scale versus
the SiO2 thicknesses.
1
Results and discussion(2/4)
16.23
Rise time 4s , Fall time 3s
Fig.3. (c) UV sensitivities with different thicknesses of the SiO2 layer at −2
V. (d) Dynamic photoresponse of the p-NiO/6-nm SiO2/n-ZnO NWs
photodetectors under UV light illumination in air, with the bias sustained at
−2 V.
2
Results and discussion(3/4)
Fig.3. (e) The J–V curves of the prepared p-NiO/6-nm SiO2/n-ZnO NWs
photodetectors under UV (365 nm) illumination with different light
intensities. (f) Relationship between the current density with UV intensity.
3
Results and discussion(4/4)
4
Conclusion
‫ ﻪ‬The 6-nm-thick SiO2 layer, was thick enough to block
most of the dark-state electrons and further improve the
UV light sensitivity.
‫ ﻪ‬The thickness of the SiO2 layer was 15 nm, not only dark
current but also the photocurrent was depressed
remarkably, so that the UV sensitivity became worse than
the device without SiO2 layer.
5
Thank you for your attention
6