Transcript Thermal annealing effect on the interfacial property and

Electronic Supplementary Material (ESI) for RSC Advances.
This journal is © The Royal Society of Chemistry 2016
Supporting Information
Thermal annealing effect on the interfacial property and
photoelectrochemical performance of Ti doped Fe2O3 nanowire arrays
Jinzhan Su*, Jinglan Zhou, Shichao Zong, Zhaohui Zhou*, Cong Liu, Bo Feng
International Research Centre for Renewable Energy, State Key Laboratory of
Multiphase Flow in Power Engineering, Xi’an Jiaotong University, Shaanxi 710049, P.
R. China.
*Corresponding authors:
Jinzhan Su: [email protected], Zhaohui Zhou: [email protected]
Figure S1. The photocurrents of Fe2O3:Ti structured thin films treated with 0.2 M and 0.4 M TiCl4 solution for 12 h
(annealed at 800 oC for 90 s).
Figure S2. The photocurrents of Fe2O3:Ti structured thin films with different treatment time in TiCl4 solution
(annealed at 800 oC for 90 s).
Figure S3. The photocurrents of Fe2O3:Ti structured thin films with different annealing time at 800 oC.
250
-Z'' (ohms)
200
30s
60s
90s
120s
3min
5min
7min
10min
150
100
50
0
100
200
300
400
500
600
700
Z' (ohms)
Figure S4. Nyquist plot of samples treated with 0.2M TiCl4 for 24h and annealed at 800 oC for different time.
Table S1 simulated parameters of equivalent circuit model R(CR)(CR) of samples treated with 0.2M TiCl4 for 24h
annealed at 800 oC for different time.
Samples
Rs(Ω)
Rct1(Ω)
C1(10-5)
Rct2(Ω)
C2(10-5)
30s
67.45
254.9
1.191
429.3
10.47
60s
70.46
57.59
5.168
149.4
33.7
90s
72.71
57.79
5.995
147.2
29.92
120s
77.73
60.08
6.766
178.5
30.15
3min
71.15
63.99
6.889
201.1
25.44
5min
88.27
60.52
8.28
216.4
22.39
7min
95.29
69.64
7.005
214.4
21.51
10min
119.8
80.06
5.364
259.5
16.14
Figure S5. X-ray photoelectron spectroscopy (XPS) spectra of Fe 2p3/2 recorded from T800-for-90s samples which
were etched for 20 s, 940 s or 1540 s. (Ar+ etching, 4000V, 4 µA/cm2)
710.80eV
2p3/2
740 735 730 725 720 715 710 705
Binding Energy/eV
c Fe 2p
Intensity/a.u.
724.28eV
740
711.00eV
2p3/2
2p1/2
735
730
725
720
724.27eV
715
Binding Energy/eV
710
705
740
735
2p3/2
730
725
720
715
Binding Energy/eV
d Fe 2p
740
710.90eV
2p1/2
Intensity/a.u.
2p1/2
b Fe 2p
724.39eV
Intensity/a.u.
724.23eV
Intensity/a.u.
a Fe 2p
710
705
711.13eV
2p3/2
2p1/2
735
730
725
720
715
Binding Energy/eV
710
705
532
g O 1s
538
526
532
530
Binding Energy/eV
i Sn 3d
528
526
3d5/2
3d3/2
500 498 496 494 492 490 488 486 484 482 480
Binding Energy/eV
Intensity/a.u.
k Sn 3d
486.66eV
495.05eV
3d5/2
3d3/2
500 498 496 494 492 490 488 486 484 482 480
Binding Energy/eV
536
534
532
530
528
526
Binding Energy/eV
486.71eV
495.13eV
531.29eV
h O 1s
531.35eV
534
529.91eV
Intensity/a.u.
528
529.79eV
Intensity/a.u.
536
530
Binding Energy/eV
Intensity/a.u.
534
529.84eV
531.27eV
536
534
532
530
528
Binding Energy/eV
j Sn 3d
Intensity/a.u.
Intensity/a.u.
531.38eV
536
Intensity/a.u.
f O 1s
529.89eV
526
486.72eV
495.16eV
3d5/2
3d3/2
500 498 496 494 492 490 488 486 484 482 480
Binding Energy/eV
l Sn 3d
Intensity/a.u.
e O 1s
486.70eV
495.14eV
3d5/2
3d3/2
500 498 496 494 492 490 488 486 484 482 480
Binding Energy/eV
n Ti 2p
Intensity/a.u.
Intensity/a.u.
m Ti 2p
475
470
465
460
455
475
450
470
p
o Ti 2p
465
458.39eV
Intensity / a.u.
Intensity / a.u.
459.26eV
465
460
450
458.22eV
2p 3/2
464.10eV
470
455
Ti 2p
2p 3/2
2p 1/2
460
Binding Energy/eV
Binding Energy/eV
455
463.95eV
2p 1/2
470
450
Binding Energy / eV
459.13eV
465
460
Binding Energy / eV
455
450
r
Intensity/a.u.
Intensity/a.u.
q
1.52 eV
18
16
14
12
10
8
6
4
2
1.62eV
18 16 14 12 10
0
Binding Energy/eV
8
6
Binding Energy/eV
s
4
2
0
Intensity/a.u.
Intensity/a.u.
t
1.77eV
1.70eV
18 16 14 12 10
8
6
Binding Energy/eV
4
2
0
18 16 14 12 10
8
6
4
Binding Energy/eV
2
0
Figure S6. X-ray photoelectron spectroscopy (XPS) spectra of Fe 2p (a, b, c, d), O 1s (e, f, g, h), Sn 3d (i, j, k, l), Ti 2p
(m, n, o, p) and valence band spectra (q, r, s, t) recorded from Fe2O3 films annealed for 90 s, Fe2O3 films annealed
for 10 min, Fe2O3:Ti films annealed for 90 s and Fe2O3:Ti films annealed for 10 min, respectively.