Transcript Cornell_MRSEC_1120296_IRG-3_Park_3-atom-thick-MoS2.pptx

A Materials Research Science and Engineering Center Program Highlight
Wafer-scale high-mobility semiconducting films, only three atoms thick
Chemically grown electronic films for atomically thin integrated circuitry
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Large scale growth of semiconducting thin films is the
basis of modern electronics and optoelectronics.
Decreasing these films to the ultimate limit of a few
atoms in thickness is difficult for traditional
semiconductors, such as silicon, but would benefit
applications in ultrathin and flexible electronics,
photovoltaics, and display technologies.
A team at Cornell has demonstrated the world’s first
three-atom-thick semiconducting films with high
electronic performance and wafer-scale uniformity.
These ultimately thin films are grown from earthabundant compounds widely used as lubricants —
molybdenum disulfide (MoS2) and tungsten disulfide (WS2)
— using a new deposition technique. Following growth,
the Cornell team processed the films with standard
nanofabrication techniques to produce high-performance
transistors with unsurpassed thinness and multi-level
integration. Their new growth technique can be used to
make atomically thin films of all varieties, opening the
door to many types of atomically-thin integrated
circuitry for electronics and optoelectronics.
Kibum Kang, Saien Xie et al., Nature 520, 656-660 (2015)
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4 inches
Mo
Fused Silica
MoS2
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W
Fused Silica
WS2
Photographs of three-atom-thick monolayer MoS2
(top) and WS2 (bottom) films grown on 4-inch
fused silica substrates, with diagrams of their
respective atomic structures.
Research supported in part by NSF DMR-1120296