ELEN 468 Advanced Logic Design VLSI Transistor/Gate Characteristics Lecture 30

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Transcript ELEN 468 Advanced Logic Design VLSI Transistor/Gate Characteristics Lecture 30

ELEN 468
Advanced Logic Design
Lecture 30
VLSI Transistor/Gate Characteristics
ELEN 468 Lecture 30
1
MOS Transistor Technology
gate
gate
drain
source
source
n
n
p
p substrate
p
n well
s
d
g
g
s
d
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2
I-V Characteristics
Cutoff region


d
Vgs < Vt
Ids = 0
g
s
Linear region


Vgs > Vt, 0 < Vds < Vgs-Vt
Ids = B[(Vgs-Vt)Vds – V2ds/2]
Ids
Saturation region


Vgs > Vt, 0 < Vgs-Vt < Vds
Ids = B(Vgs-Vt)2/2
B = a W/L
Vds
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3
Switching Characteristics
Vin
Vdd
in
d
out
t
Vout
Ids
Vds
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tfall
tdelay
t
4
Falling and Rising Procedure
Input rising
Vdd
Input falling
Vdd
Vdd
out
Saturation
out
Linear
ELEN 468 Lecture 30
Vdd
out
Saturation
out
Linear
5
Falling Time
Falling time = t1 + t2
t1 = Vout drops from 0.9Vdd to Vdd-Vt
t2 = Vout drops from Vdd-Vt to 0.1Vdd
Falling time = rising time
≈ k C / (B Vdd)
Delay ≈ Falling time / 2
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Cascaded Drivers
1 2
3
k
CL
p: stage ratio
size( i+1 ) = p ● size( i )
R( i+1 ) = R( i ) / p
C( i+1 ) = p ● C( i )
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Delay of Cascaded Drivers
Delay between stage i and i+1
R( i ) ● C( i+1 ) = p ● R( i ) ● C( i )
Total delay from stage 1 to stage k
p●R(1)●C(1) + p●R(2)●C(2)+ …
+p●R(k-1)●C(k-1) + R(k)●CL
= p●R(1)●C(1) + p●R(1)●C(1)+ …
+p●R(1)●C(1) + R(1)●CL / pk-1
= (k-1)●p●R(1)●C(1) + R(1)●CL / pk-1
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Minimum Delay Stage Ratio
A = (k-1)●R(1)●C(1), B = R(1)●CL
t = A●p + B●p1-k
Let derivative t’ = 0
A + (1-k)●B●p-k = 0
pk = (k-1) ●B/A = CL / C(1)
p = [CL / C(1)]1/k
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Optimal Number of Stages
CL = C(1) pk
k = ln(CL/C(1)) / ln p
t = k●p●R(1)●C(1)
= (ln (CL/C(1)) / ln p – 1)●p●R(1)●C(1)
Delay t reaches minimum when
p ≈ 2.72
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10
Gate Power Dissipation
Leakage power
Dynamic power
Short circuit power
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Leakage Power
Static
Leakage current
= a ● Vdd
Leakage current
= b/Vt
Killer to CMOS
technology
Vdd
Vdd
Leakage
out
out
Leakage
Linear
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Saturation
12
Dynamic Power
Occurs at each
switching
Pd = CL●Vdd2●fp
fp switching
frequency
Vdd
Vdd
out
Linear
ELEN 468 Lecture 30
out
Saturation
13
Short Circuit Power
During switching,
there is a short
moment when both
PMOS and CMOS are
partially on
Ps = Q●(Vdd-Vt)3●tr●fp
tr rising time
ELEN 468 Lecture 30
Input falling
Vdd
Vdd
out
out
Input rising
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