Transcript Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP First Time User Guide to PN Junction V1.31 Saumitra R.

Network for Computational Nanotechnology (NCN)
UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP
First Time User Guide to
PN Junction V1.31
Saumitra R Mehrotra*, Ben Haley &
Gerhard Klimeck
Network for Computational Nanotechnology (NCN)
Electrical and Computer Engineering
http://nanohub.org/resources/229
*[email protected]
Outline
 Introduction
 What is a PN Junction?
 Working of a PN Junction.
 What can be simulated by in PN Junction Lab?
 What if you just hit “Simulate”?
 Examples
 What if the doping is changed?
 What if the intrinsic region is included (e.g. PIN diode)?
 Limitation/Comments
 References
Saumitra R Mehrotra
What is a PN Junction?
• A PN junction is a device formed by combining p-type ( doped
with B,Al) and n-type (doped with P,As,Sb) semiconductors
together in close contact.
• PN junction can basically work in two modes,
» forward bias mode (as shown below: positive terminal connected to pregion and negative terminal connected to n region)
» reverse bias mode ( negative terminal connected to p-region and
positive terminal connected to n region)
PN junction device
Saumitra R Mehrotra
Working of a PN junction
Current
I-V characteristic of
a PN junction diode.
Reverse Bias
Forward Bias
Zener or
Avalanche
Breakdown
Voltage
• PN junction diode acts as a rectifier as seen in the IV characteristic.
• Certain current flows in forward bias mode.
• Negligible current flows in reverse bias mode until zener or
avalanche breakdown happens.
Refer https://nanohub.org/resources/68 for a detailed discussion on operation of PN junction.
Saumitra R Mehrotra
What can be simulated in PN junction lab?
PN junction device structure
Specify P-type region length. (More
number of nodes lead to higher
resolution but also more compute
time)
Specify intrinsic region length
Specify N-type region length
Specify doping level for Ptype and N-type region.
Saumitra R Mehrotra
What can be simulated in PN junction lab?
PN junction material definition
Specify the material to be
simulated (Si,Ge,GaAs)
Specify intrinsic minority
carrier lifetime (s).
Saumitra R Mehrotra
What can be simulated in PN junction lab?
PN junction environment definition
Specify temperature (K).
Specify applied voltage and
number of steps.
Saumitra R Mehrotra
What can be simulated in PN junction lab?
PN junction output plots
Default settings will simulate :
PN junction diode in forward bias mode with,
1m long P-type and N-type regions doped at 1e17 cm3.
Saumitra R Mehrotra

What if you just hit simulate?
• IV characteristic for PN junction in
forward bias mode in default
settings.
Knee voltage
•Current increases slightly till
Knee Voltage*.
•Beyond it current rises
exponentially.
*Refer https://nanohub.org/resources/68 for a detailed discussion on operation of PN
junction.
Saumitra R Mehrotra
What if you just hit simulate?
C-V characteristic for PN junction
in forward bias mode in default
settings.
• C  d –1
[1]&[2]
where,
C : capacitance across PN junction
&
d : depletion width* (insulating region
at the junction where carriers have
diffused away or have been swept by
the electric field.)
• Increasing bias  decreasing
depletion width  Increasing
Capacitance
*Refer https://nanohub.org/resources/68 for a detailed discussion on operation of PN
junction.
Saumitra R Mehrotra
What if you just hit simulate?
P-region
N-region
Built in charge, electric field
and potential at equilibrium.
Built in charge
Built in
potential,
Vbi= 0.834V
P-region
Built in electric field
Saumitra R Mehrotra
N-region
What if you just hit simulate?
P-region
N-region
Decreasing charge with applied bias due to
thinning of depletion width.
Built in charge, electric field and
potential at forward bias Va=0.6V
Potential
difference
Vbi-Va= 0.234V
Increased diffusion of
electrons across the
barrier lowered by Va.
P-region
N-region
Decreasing electric field with applied bias
due to thinning of depletion width.
Saumitra R Mehrotra
Positive bias at P side reduces
the barrier leading to increase in
diode current.
What if doping is changed?
On changing doping for both n-type and p-type
regions from 1e16 cm3 to 1e18 cm3.
• Increasing doping leads to increasing
built in potential, Vbi [1],[2].
Doping= 1e18 cm3
 N a .N d
Vbi  K bT log 
 ni
=V
Doping= 1e16
cm3
bi



Na : P region doping level (cm-3).
Nd : N region doping level (cm-3).
ni : Intrinsic carrier density (cm-3).
KbT : Thermal voltage (= 0.0259 V).
Saumitra R Mehrotra
What if intrinsic region is included i.e PIN diode?
On introducing an intrinsic region of length 0.2 m with default setting.
PIN diode (bold)
PN diode (light)
Increased depletion width (d) due to
addition of intrinsic region as seen
in energy band diagram.
Saumitra R Mehrotra
Junction Capacitance, Cj  d-1
shows a decrease as seen in CV
characteristic.
Limitations/Comments
• Large physical dimensions (>10um) might lead to non
convergence or large compute time.
• More nodes might be required for better convergence in
some cases i.e. high doping in PN junction.
• PN junction currently performs steady state simulations only,
no time dependent simulations are possible.
• Contacts during the simulation are considered to be ohmic
(i.e. Current-Voltage,I-V curve is linear and symmetric).
Saumitra R Mehrotra
References
PN junction theory
• [1] PN junction OPERATION : https://nanohub.org/resources/68
• [2] “Semiconductor Device Fundamentals”, by R.F. Pierret
PADRE
• [3] Dragica Vasileska; Gerhard Klimeck (2006), "Padre," DOI: 10254/
nanohub-r941.3.
• [4] PADRE MANUAL : http://nanohub.org/resource_files/tools/padre/doc/
index.html
Please report any comment/review at the following link,
• https://nanohub.org/resources/pntoy/reviews
If you reference this work in a publication, please cite as follows:
• Matteo Mannino; Dragica Vasileska; Michael McLennan; Xufeng Wang; Gerhard Klimeck
(2005), "PN Junction Lab," DOI: 10254/nanohub-r229.9.
Saumitra R Mehrotra