Progress Report since last ECFA-DESY, Prague Nov ’02 Aurore Savoy-Navarro, LPNHE-Universités de Paris 6/IN2P3-CNRS  Sensor & Electronics Test bench  Si-Envelope CAD.

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Transcript Progress Report since last ECFA-DESY, Prague Nov ’02 Aurore Savoy-Navarro, LPNHE-Universités de Paris 6/IN2P3-CNRS  Sensor & Electronics Test bench  Si-Envelope CAD.

Progress Report since last ECFA-DESY, Prague Nov ’02
Aurore Savoy-Navarro, LPNHE-Universités de Paris 6/IN2P3-CNRS
 Sensor & Electronics Test bench
 Si-Envelope CAD design progress: Si-FCH
 More on cooling studies & protos
 More on MC performance studies
 Work on the SiLC –PRC proposal
Visit: http://lpnhe-lc.in2p3.fr
J.E. Augustin, M. Baubillier, M. Berggren, W.Bertoli, B. Canton, Cl. Chapron, C. Carimalo,
W.DaSilva, D. Imbault, F. Kapusta, H. Lebbolo, F. Rossel, D. Vincent, ASN.
And collaboration of Geneva U, ETHZ, Peruggia U. teams
1.- SENSOR & ELECTRONICS TEST BENCH
Major step forward:
The prototype long ladder has been built following the AMS
recipes to build long ladders:
 Geneva U for assembling & mounting of the individual
sensors that constitutes the long ladder,
 ETHZurich@ CERN bonded the sensors and the VFE
electronics,
and also Peruggia U. + Paris-LPNHE contributions
The prototyped long ladder is a key-element for the test-bench
It enable us to start an extensive study of the characteristics both
of the long microstrips and the VFE electronics linked to it;
 S and N evolution wrt strip and shaping time length,
with temperature etc…
 and also testing various VFE’s=>design of new VFE
This test activity is starting now at the Lab
Assembly procedure (AMS)
Assembly procedure (AMS)
Assembly procedure (AMS)
Assembly procedure (AMS)
Assembly procedure (AMS)
Assembly procedure (AMS)
Assembly procedure (AMS)
AMS-01 Silicon precision cut
t1
t2
l1
l2
 ~ 3.5 m
The distance between the reference marks on the silicon and the edge
after the cut => the precision of the cutting itself
AMS-01 Silicon alignement
The residual of the ladder metrology (after gluing)
The Prototype ladder & VFE outputs
The p-side, 110 -RO pitch
The leakage current of
all strips of each sensor
were measured
Ladder is made of 7 AMS, 4’’ sensors: 4.1x7.2 cm2, 300 thick
Today and tomorrow: first measurements of the ladder on Geneva test bench
The n-side, 220
RO pitch
A lot was learnt by our
technical team on the
details of the construction
of long ladder:
VALUABLE for the next times (from ``handmade’’to large scale fabrication)
The output-kapton design
allows:
Variable lengths: 28, 56,
112, and 224 cm strip-length
Change VFE (cutting the
kapton)
First tests on VA-64-hdr &
VA-1(better noise perf., lower
dynamic range wrt to other VA) Next step: design of a new VFE
(in September) =>foundry Jan’04
2.- Progress on CAD design of the Si-envelope
The honeycomb structure
The ladder made
of 6 sensors
The SET-drawer
For 5 ladders
Detailed CATIA-based design
of SET and SIT
Importance of the tracking at large angle
 growing interest on the Si-FCH design
The physics interest of the large angle region is growing with the
with the increase of Ecm.
Physics both standard and beyond standard (SUSY, Xdim) is giving
several appealing scenarios that require a good measurement of tracks
including down to very low angles wrt beam axis.
The LPNHE-Paris team is interested in the Si-FCH and is thus
pursuying the study of the large angle region in two ways:
1) Physicist’s simus (SGV and to be started: GEANT4-based simu)
 study of the design (XUV geometry, number of layers, long
strips ? How long? etc….),
 and of detector performances of Si-FCH (Momentum resolution,
occupancy). Details from TESLA beam needed as input info.
2) CAD mechanical design studies  with as drawback to 1): def of
geometry DB for the Si-FCH in GEANT 4 simu.
Si-FCH Design & Performance studies with SGV-based
simulations
Low Pt region < 25 GeV/c
High Pt region > 25 GeV/c
4 XUV planes are presently considered.
Impulsion resolution of: TPC+straw tubes (100m reso/pt) wrt
TPC+Si-FCH (25m reso/pt)
Si-FCH better than straw tubes for large impulsion and when the
angle wrt beam increases
Evolution of the Si-FCH design: from projective to XUV
Chicago Wkshp: Jan’02
Projective=> short strips
Going from projective to XUV geometry
St-Malo: April ‘02
XUV => long strips possible thus
less channels & easy to build
New Si-FCH design based on long ladders
Single sided designs:
{XUV}-triplet
The region of cut (if any)
and around beam axis
must be studied and
carefully designed to
avoid dead regions
{XXXX} + {UUUU} +
{VVVV}
Double-sided (true or
false) with:
{X} + {UVUVUVUV}+{X}
More on: Cooling studies
Two approaches in parallel:
Mechanical prototype
CAD dedicated simu package
Comparisons between proto measurements and
CAD simus computations
Tunning the simulations with the measurement results on the
mechanical prototype
New measurements on prototype surrounding it with an epoxy structure
(more stringent than reality) that mimics the honeycomb struture
Further progress on the simulation studies
LC-Note to be submitted in about one week
and on: http://lpnhe-lc.in2p3.fr/lcnotes
Studies are SGV-based (see presentation by M. Berggren at Simu session)
Main outcomes of this present work:
 Study on the best geometry design for the proposed SET device:
The SET detector should be made of 3 layers, with one double
sided, packed as closely as possible, and with the best possible
point resolution. Making the detector as thin as possible is
useful but a second priority wrt previous points.
Momentum resolution with TPC with or without SET (next page)
 Same for the Si-FCH (see some transparencies above)
 Hit density in SET
 Hit density in Forward tracking: being started
Effect of SET device on gammas
Remark: Although a fast simu, SGV includes : mulitple scattering, materials,
spiralling of low Pt charged tracks etc…. (see SGV Web site)
Low Pt range: up to 25 GeV/c
High Pt range: up to 250 GeV/c
1GeV/c
4.5 GeV/c
Assumptions: TPC reduced to 155cm, pt resolution = 180 m
Under these assumptions:
An improvement up to 20% is observed at high momenta and,
For low momenta the 2 reso curves cross at 4.5 and 1 GeV/c
(tracks < 1 GeV/c do not reach the SET) => modest (<5%)
deterioration between 1 and 4,5 with SET, rising up to 10% at 1.5GeV/c
Setting-up of the SiLC collaboration: PRC
Worldwide R&D activity for Si-tracking at the LC
from 2003 to end 2006,
With as main objectives, generic R&D on
Si-sensors ( strips, SDD, new SS-sensors)
VFE, readout and RT processing electronics
Mechanics: XXXXXthin detector
Simus studies & developments
Test bench, including test beams
Calibration & Monitoring issues
Submission of a proposal for the next PRC:
May 7th-8th
See asn’s presentation on March 31st at the International LC tracking
+ Muon Report VRVS Conference – NIKHEF, see tracking Website
And: http://lpnhe-lc.in2p3.fr / Click on Amsterdam31