بسم هللا الرحمن الرحيم The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department POWER ELECTRONICS EELE 5450 — Fall 2009-2010 Instructor: Eng.Moayed N.
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Slide 1
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 2
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 3
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 4
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 5
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 6
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 7
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 8
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 9
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 10
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 11
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 12
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 13
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 14
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 15
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 2
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 3
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 4
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 5
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 6
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 7
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 8
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 9
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 10
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 11
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 12
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 13
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 14
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed
Slide 15
بسم هللا الرحمن الرحيم
The Islamic University of Gaza
Faculty of Engineering
Electrical Engineering Department
POWER ELECTRONICS
EELE 5450 — Fall 2009-2010
Instructor: Eng.Moayed N. EL Mobaied
Lecture 3
Chapter Two
Power Semiconductor Diodes
Power diodes have large power-, voltage-, currenthandling capabilities than that of ordinary signal diodes.
Chapter Two
Power Diodes symbol and type of packaging
Chapter Two
Diode Characteristics
Chapter Two
V-I characteristics
Forward-biased region
Reverse biased region
Breakdown region
Chapter Two
I D I S (e
VT
Vd
nVT
1)
Shockley’s equation
Kt
q
N=1,2( Germanium, Silicon) practically 1.1—1.8
VT= Thermal voltage
IS= Saturation current
k is Boltzman ' s cons tant 1.38 * 10 23 j / k
T is the absoulte temperature in kelvins 237 the temin C
q is the magnitude of electronic ch arg e 1.6 * 10 19 C
Chapter Two
Shockley diode equation
Chapter Two
Forward-bias VD>0
Chapter Two
Reverse-bias VD<0
Chapter Two
Reverse Recovery Characteristics
trr ta tb
(2.5)
2QRR
di / dt
(2.10)
trr
Tb/Ta is the softness factor (SF)
I RR
2QRR
trr
I RR 2QRR
di
dt
(2.8)
(2.11)
Chapter Two
Power Diode Types
Ideally, a diode should have no reverse recovery time,
However, the manufacturing cost of such diode will increase.
The power diodes can be classified into three categories:
Standard or general-purpose diodes
Fast-recovery diodes
Schottky diodes
Chapter Two
Standard or general-purpose diodes
Reverse recovery time= 25 us (relatively high).
Used in Low-speed applications.
Current rating : From less than 1 Ampere to several
thousands of Amperes.
Voltage rating 50 v to 5 kV.
Chapter Two
Fast-Recovery Diodes
Reverse recovery time< 5 us ( Low).
Used in DC-DC and DC-AC converter circuit (high
speed applications).
Current rating : From less than 1 Ampere to several
hundreds of Amperes.
Voltage rating 50 v to 3 kV.
Platinum or gold.
Chapter Two
Schottky Diodes
No minority carriers .
Recovered charge is much less than P-n junction diodes.
Used in high current and low voltage dc power supplies.
Current rating : From 1 Ampere to 300 Amperes.
Voltage rating <100 V.
Chapter Two
The reverse recovery time of a diode is trr=3us and
the rate of fall of the diode current is di/dt=30 A/us
Determine
(a) the storage charge Qrr
(b) Peak reverse current Irr
End of Lecture **** Eng.moayed