Solid State Detectors
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Transcript Solid State Detectors
Radiation Detection and Measurement II
IRAD 2731
What is a semiconductor?
Types of semiconductors
Why is it different than scintillators
Semiconductor – has electrical
conductivity between metals and
insulators
Pure- pure Si or Ge crystals are
used to generate signal
Small band gap
Creates hole/electron pair
Numbers of electrons produced is
proportional to energy deposited in
crystal
Conduction band
10eV
Band
Gap
<3eV
Valence band
Scintillator
Solid State
N-type- material is doped with a “donor
impurity” which has a loosely attached
electron
This generates free electrons easier than pure
Si cause electrons are in different energy
state
Si has 4 electrons ,As or P, are used at doped
material, have 5 electrons
P-type-material is doped with an “acceptor
impurity” which has a need for an extra
electron
This generates ”holes” easier than pure Si
Si has 4 electrons, AL or B, are used at doped
material, have 3 electrons
When semiconductors are exposed to
radiation the electrical properties change
Intrinsic- material has been doped with both
n and p type impurities
Doping with both material aligns the holes on
one side and the electrons on the other
Appling reverse bias increases the
hole/electron area
This forms a depletion layer, active volume of
the detector
Surface barrier detector
PIPS
Silicon detectors
Gemanium detectors
In pure Si and Ge and natural current exists
that excludes holes/electrons close to the
surface
P-type material is electroplated onto the
surface of a n-type Si surface, usually gold
With reverse bias applied this creates a
depletion layer
Thin dead layer, very little energy loss of
charged particles
Surface Barrier
-Very good resolution , better than p-n
junction detectors
Depletion layer is not as thick (best for low
energy
particles)
-Light sensitive (2-4eV)
-Very low background
-Electronic noise
-Very fragile- can not touch
surface
Passivated implanted planar silicon
Photo diode
Measures signals as photo current so can be
very sensitive
Low noise
Needs to be shielded from visible light
Alpha/beta detection
More rugged that SSB, lower leakage current,
window material is thinner
Most common semiconductor
Used to detect heavy charged particles
Alpha spectroscopy
Good energy resolution
SiLi detectors (used for gamma spect) have to
be cold all the time
◦ Prevent the movement of Li inside the Si crystal
◦ BUT not for charged particles
Designed for highly
penetrating
charged particle Up
to 3 MeV Betas, 30
MeV protons, 140
MeV Alpha
Used to be doped with Li top get larger
depletion zone
◦ Have to keep cold all the time
Easier to get high purity Ge than Si cause of
melting temp
GeLi has been replaced with HPGe
HPGe detectors can be warmed to room temp
when not in use
Planar
◦ Slab of detector
◦ Limited in size
Coaxial
◦ Can have either n or p type coaxial detectors
◦ Larger active volume of detector
◦ Large dead layer does not affect most gamma rays
Cryostat- container that holds liquid
Nitrogen (or other cold liquid)
A method of transmitting this to the detector
(usually a copper cold finger)
◦ Can have several orientations
Detector capsule- consisting of the detector
and electronics housed in protective endcap
Band gap is only 0.7 ev
Thermal noise will generate tremendous
leakage current leading to noise
Will need to be cold (LN) to operate
◦ Decrease in movement of the atoms in the crystal
will decrease thermal noise
Have smaller band gap get more pieces of
info from each radiation event
◦ More events better statistics
Energy resolution depends on
◦ Statistical spread in number of charged carriers
◦ Variations ion charged collect ion efficiencies
◦ Electronic noise
HPGe have better resolution than
scintillators
◦ which means that you can see gamma peaks
that are closer together than in the scintillation
crystals
NaI detectors are more efficient than HPGe
HPGe detectors have better resolution than
Na I
BUT have some large HPGe detectors that are
more efficient than their NaI counterparts
More expensive than NaI crystals
◦ NaI gamma spectroscopy system about 10K
◦ Same efficiency HPGe system about $100K
CZT -cadmium-zinc-telluride crystals
◦ Operates at room temperature
◦ Good energy resolution better than NaI but not as
good as HPGe
◦ Hard to grow
◦ High density
LaBr
◦ Similar characteristics