Transcript Spin Hall Effect
Observation of the spin-Hall Effect
2005. 4. 18 M1 Colloquium in the Frontier Materials Division Soichiro Sasaki Suzuki-Kusakabe Lab. Graduate School of Engineering Science Osaka University
Abstract
• To realize spin-electronics, techniques to accumulate electron spin in semiconductor devices are required. In the usual spin electronics devices, spin injection is usually realized using ferromagnets.
• The spin-Hall effect the spin-Hall effect.
is another possibility and we can substitute the effect for ferromagnets. Spin current flows in the direction perpendicular to the direction of charge current when the voltage is applied to an electron system in a semiconductor device. Spin accumulation would occur at two edges as a result. This is called • The experiments [1,2] I'll introduce succeeded in observation of the spin-Hall effect that was predicted theoretically. Spin accumulation is observed with a Kerr rotation microscope in the first one. Spin-dependence of polarization in a light-emitting diode structure is an evidence in the second one. There are two origins of spin-Hall effect, extrinsic spin-Hall effect and intrinsic spin-Hall effect. The former experiment shows domination in the extrinsic spin-Hall effect . The latter claims observation of intrinsic one .
[1] Y.K. Kato, et al., Science 306 (2004) 1910.
[2] J.Wunderlich,Phy. Rev. Lett. Vol.94 (2005) 047204
Contents
1. Introduction 2. Observation of the spin-Hall Effect 2.1 Kato’s spin-Hall device 2.2 Wunderlich’s spin-Hall device 3. Summary
1-1 Spin-electronics devices
GMR device Spin-FET Gate bias (Off) Gate electrode Source (FM) Drain (FM) Spin-FET by Datta & Das TMR device Channel Gate bias (On) Electrode (Ferromagnel) Insulator (Oxides) Electrode (Ferromagnet) No current flows These devices are realized by using ferromagnets.
Problems of these devices
• We use ferromagnets to fabricate spin-electronic devices. However, it is troublesome to fabricate ferromagnets in semiconductor devices.
• We must use magnetic field to change the direction of a magnetic moment. We can’t make a device structure, which is controllable by applied magnetic field, smaller than a predicted limit. Solution Spin-Hall effect
1-2 semiconductor hetero junction
(a) Ordinal heterojunction to realize the two-dimensional electron gas.
(The 2DEG) 2DEG (b) Heterojunction may used as a n-type device.
The electronic system at the interface in AlGaAs/ GaAs junction produces the two-dimensoinal hole gas (The 2DHG), when the bias is introduced as shown by the black lines.
2DHG
1-3 The Hall effect (Carriers are electrons)
Hall voltage ;
V y
I x B z end
Density of carriers ; Velocity of a carrier ;
n v
Lorentz force ; Applied current ; Induced voltage ; (Hall voltage) (
ev
e v
x B
z
B
eF y
e F
)
I x
V y enhdv x
hF y
The elementary electric charge ;
e
1-4 Spin Hall Effect
In a nonmagnetic metal, the spin-orbit interaction causes a pure spin current perpendicular to the applied electric field.
the vector of spin current whose spin is polarized along z axis. Spin accumulation Motion of up-spins Motion of down-spins
Extrinsic Spin-Hall effect
• This effect is caused by spin-orbit interaction of impurities.
A phenomenological continuous equation of spin density and spin-flux density.
S
t
q
x
S
S
s
0 Spin relaxation
q
: Spin flux density
S
: The spin density Magnetic field effect =m B g
H
/h
H
: Magnetic field
Intrinsic Spin-Hall effect
• The electrons at the valence band top, i.e. the holes follow an equation of motion in the
k
-space, in which a band-touching point the acts as a Dirac magnetic monopole in the momentum space.
• Valence band top of GaAs is a typical example. Thus p-type doped semiconductor is required to have intrinsic SHE.
1-5 Hall effect v.s. Spin-Hall effect
Spin-Hall effect Hall effect Applied field Accumulat ed quantity Magnetic field & Electric field Elctric carge Spin-Hall effect Spin-orbit interaction & Electic field Electron spin
1-6 Kerr rotational microscopy
Kerr effect Magnetic substance • When incident linearly polarized light (i) interacts with a magnetic system the reflected light (r) turns out to be elliptically polarized (the orientation of the magnetization
M
is perpendicular to the surface).
Kerr rotational microscope
Kerr rotaional microscopy (in the Santa Barbara) Schematic of the experimental geometry Phys. Today Vol. 58 Nov.2 17 (Feb. 2005)
Observations of spin-Hall effect
1. Y. K. Kato, R. C. Myers, A. C. Gossard, D. D. Aschalom, Science Vol.306,1910 (2004);published online 11 November 2004 (10.1126/science.1105514). 2.
J. Wunderlich, B. Kaestner, J. Sinova, T.Jungwirth, Phys. Rev. Lett. Vol. 94,047204 (2005).
2.1 Y. K. Kato’ s experiment
Method of detection ; Kerr rotational microscopy Strong point ; It can observe spatial map of spin.
Weak point ; The limit of detected spot (more than 1.1μm) Long spin life time is needed to observe the spin-Hall effect.
Kerr rotation in an unstrained sample
Schematics of the unstrained GaAs sample Kerr rotation, peak KR, and a spin lifetime as a function of x or
B
ext KR, peak KR, and a spin lifetime as a function of x,
B
ext & E
Spin accumulation
• Figure A: Two dimensional images of spin density
n
s .
• Figure B: Two dimensional images of reflectivity.
• These pictures are direct observation of the spin-Hall effect.
Hanle effect of unstrained sample
L
S A
0 2 1 Larmor precession frequency;
L
g
B B ext
Electron spin lifetime; Electron g factor;
g
s
Bohr magneton;
B
The peak Kerr rotation;
A
0
Kerr rotation in strained sample
Schematics of the strained In x Ga 1-x As sample Kerr rotation, peak KR,
B
int and
R
as a function of x or
B
ext
Hanle effect of strained sample
Kerr rotation ; [(
s A
1 ) 2 1 ] [(
s A
1 ) 2 1 ] Kerr rotation peak ; Precession frequency;
g
B
(
B ext g
B
(
B ext
B
int )
B
int )
A
1 The spin polarization is maximum
B ext
B B B
int .
Result of Y. K. Kato’ s experiment
• The band structure that is the origin of intrinsic one is broken by straining of the sample. This experiment is caused, they think, by extrinsic one.
• If the effect originated in the lattice, then it should depend on the strain direction.
2.2. J. Wunderlich’s experiment
Method of detection ; Electroluminescence of LED Strong point ; It can detect magnetic field at very small spot.
The crystal used at this experiment is very clean crystal. It has possibility of intrinsic spin-Hall effect.
Weak pint ; It can’t detect spatial map of spin .
p-n junction LED device
Conduction and valence band profiles Schematic cross section of the device
Schematic of sample and data
SEM image of the SHE LED device b: Polarization along z axis measured with active LED 1.
c: Polarization with fixed Ip for LED 1 or LED 2.
Result of J. Wunderlich’s experiment
• Hitach researchers believe their experiment to be too low in signal to account for the polarization they observed. The spin-Hall effect in their sample is, they believe,intrinsic in origin.
Summary
• Using the Kerr rotational microscope, the extrinsic Spin Hall effect was observed in a n GaAs thin layer. (Kato’s experiment) • In a strained InGaAs device, no clear evidence of the strain effect on the Spin-Hall effect was observed. Thus, the intrinsic Spin-Hall effect is not observed in this sample. (Kato’s experiment) • Using electrolumimescemce from LED made of 2DHG/2DEG junction, spin polarization is found, which depends on direction of the electric field across 2DHG. This result suggest the intrinsic Spin-Hall effect. (Wunderlich’s experiment)