Transcript Document

Pattern Dependent Modeling
of Polymer Microfluidics
Manufacturing Processes
Duane Boning and Hayden Taylor
Microsystems Technology Laboratories
Electrical Engineering and Computer Science
Massachusetts Institute of Technology
October 24, 2007
Spatial Variation in MEMS Processes
Wafer Scale
Chip/Part Scale
Feature Scale
• Many MEMS processes face uniformity challenges due to:
– Equipment limitations
– Layout or pattern dependencies
• Variations often highly systematic and thus can be modeled
– Models can help improve process to minimize variation
– Models can help improve design to compensate for variation
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Previous Work: Variation in DRIE
wafer in
cross-section
device/‘die’
spatial variation
feature-scale
aspect ratiodependent
etching (ARDE)
wafer/chamber-scale
inter- and intradevice
competition for
reactants; diffusion
F
ion and
radical flux
distribution
waferlevel
‘loading’
X
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Current Focus: Hot Embossing
Hot Embossing
• Goal:
– Formation of surface
structures in polymer or
other materials
– Microfluidics & other
applications
• Key Issue:
– Embossing requires flow
of displaced material:
pattern dependencies
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Hot Micro- and Nano-Embossing
Glass
transition
temperature
temperature
stamp
load
polymer
tload thold
time
• To choose an optimal process, we need to
assign values to
– Heat
– Time
• Load and temperature are constrained by
– Equipment
– Stamp and substrate properties
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Hot Micro-Embossing Compared to
Nanoimprint Lithography
stamp
stamp
polymer
polymer
typ. 10 micron
stiff substrate
typ. 100 nm
Sub-micrometer features
Chou et al Appl. Phys. Lett.
67(21): 3114 (1995)
Micro-embossing
Nano-imprint
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PMMA: A Typical Embossing Material
• Near Tg: elasto-plastic
• ~125-170 C: rubbery
• Higher temperatures: viscous fluid
Stress-strain curves for PMMA at various
temperatures, strain rate 0.001/s
(solid line is data; dashed line is model)
Ames et al. Proc. ICOMM 2006
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PMMA in Compression
N.M. Ames, Ph.D. thesis, MIT, 2007
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PMMA in Compression, 140 °C
Unload below TG
using model of N.M. Ames, Ph.D. thesis, MIT, 2007
Unload above TG
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PMMA in Compression
Compare this ratio, P/Q, to the Deborah number, tmaterial/tload
using model of N.M. Ames, Ph.D. thesis, MIT, 2007
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Starting Point: Linear-Elastic Material
Model
E(T)
• Embossing done at high temperature, with low elastic modulus
• Deformation ‘frozen’ in place by cooling before unloading
• Wish to compute deformation of a layer when embossed with an
arbitrarily patterned stamp
• Take discretized representations of stamp and substrate
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Response of Material to
Unit Pressure at One Location
load
radius, r
General load response:
1  2
w( x, y )
E
p , 
  x      y   
2
2
dd
Point load response
wr = constant
w
Response to unit pressure in a single element of the mesh:
1 
 f x2 , y2   f x1 , y2   f x2 , y1   f x1 , y1 
Fi , j 
E
f x, y   y ln x  x 2  y 2  x ln y  x 2  y 2
2




Fi,j defined here
x2,y2
x1,y1
Unit pressure here
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1-D Verification of Approach for PMMA at 130 °C
• Iteratively find distribution
of pressure consistent
with stamp remaining
rigid while polymer
deforms
• Fit elastic modulus that is
consistent with observed
deformations
Extracted Young’s
modulus ~ 5 MPa at 130 °C
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2-D Characterization Test Pattern
stamp cavity
protrusion
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2-D Linear-Elastic Model
Succeeds with PMMA at 125 °C
Si stamp
1
2
3
4
5
6
7
8
Lateral position (mm)
Lateral position (mm)
protrusion
1 mm
Simulation
15 μm
0
1 2 3 4 5 6 7 8
Topography (micron)
cavity
Thick, linear-elastic material model
Experimental data
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Linear-Elastic Model Succeeds
at 125 °C, pave = 0.5 MPa
stamp
penetration
polymer
w
p
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Linear-Elastic Model Succeeds
at 125 °C, pave = 1 MPa
Features filled,
1MPa
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Linear-Elastic Model Succeeds
Below Yielding at Other Temperatures
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Extracted PMMA Young’s
Moduli from 110 to 140 °C
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Material Flows Under an Average
Pressure of 8 MPa at 110 °C
stamp
polymer
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Scaling Point Load Response Function for Flow
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Time-Stepped Simulation of Flow
stamp
stamp
stamp
stamp
stamp
polymer
polymer
polymer
polymer
polymer
t=0
t = Δt
t = 2Δt
t = 3Δt
t = nΔt
z p [i, j,0]  0
 i, j
z[i, j, t ]  z0[t ]  z p [i, j, t ]  ze [i, j, t ]
z[i, j, t ]  z p [i, j, t  t ]  (1  t )Fe [i, j]  p[i, j, t ]
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2-D Characterization Test Pattern
cavity
protrusion
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Scaling Point Load Response Function for Flow
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Scaling Point Load Response Function for Flow
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Scaling Point Load Response Function for Flow
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Yielding at 110 °C
stamp
penetration
polymer
w
Simple estimates of strain rate:
penetration
w
t hold
2
10-3 to 10-1 during loading
10-4 to 10-3 during hold
Local contact pressure
at feature corners > 8 MPa
N.M. Ames, Ph.D. Thesis, MIT, 2007
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Modeling Combined
Elastic/Plastic Behavior
Compressive
stress
Yield stress
Compressive
strain
0.4
Plastic flow
Deborah number
De = tmaterial/tload, hold
De << 1
Consider
plastic
deformation
instantaneous
De ~ 1
De >> 1
Consider flow to be
measurable but not to modify
the pressure distribution
substantially during hold
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Modeling Combined
Elastic/Plastic Behavior
Plastic flow
Elastic: E(T)
De << 1
De ~ 1
De >> 1
Plastic flow


 A  Bt
wx,y  px,y  f x,y   px,y  p
f x,y


e
yield 
hold p

Existing
linear-elastic
component
fe
Tuned to represent cases from
capillary filling to
non-slip Poiseuille flow
Material
compressed
radius
fp
Volume
conserved
radius
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Embossing Simulation: Thin Layers
Rowland et al., JVST B 23 p.2958
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Status and Future Directions –
Polymer Hot Embossing Model
• The merits of a linear-elastic embossing polymer
model have been probed
• This simulation approach completes an 800x800element simulation in:
~ 45 s (without filling)
~ 4 min (with some filling)
• Our computational approach can be extended to
capture yielding and plastic flow
• Is a single pressure distribution solution sufficient to
model visco-elasto-plastic behaviour?
• Abstract further: mesh elements containing many
features
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Conclusions
• Spatial variation a concern in MEMS fabrication
processes
• Semi-empirical modeling approach developed:
– Physical model basis
– Process characterization for tool/layout
dependencies
• Applications:
– Current focus: Polymer hot embossing
– Deep reactive ion etch (DRIE)
– Chemical-mechanical polishing (CMP)
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Acknowledgements
• Singapore-MIT Alliance (SMA)
• Ciprian Iliescu and Bangtao Chen (Institute of
Bioengineering and Nanotechnology, Singapore
• Nici Ames, Matthew Dirckx, David Hardt,
and Lallit Anand (MIT); Yee Cheong Lam (NTU)
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