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Efficiency Evaluation of Thin-Film
Hetero-Junction Solar-cells
Presented By :Gaurav Jain
www.powerpointpresentationon.blogspot.com
Introduction
•
•General introduction
•History
•Generation
Efficiency law and loss mechanism
•
•Planck’s law
•Loss
a)Optical
b)Electrical
-Ohmic
-Recombination
High Efficiency Cells
•Monocrystalline si
•Polycrystaline si
a)Multiple junction solar cell
b) Thin film solar cells
* Applications & Implementations
Photovoltaic Effect
•Introduction
•Procedure
Theory of Solar Cells
•Photo generation of charge carriers
•Charge carrier separation
•The p-n junction
•Connection to an external load
Equivalent circuit of solar cell
•
• Effect of physical size
• Cell temperature
V-I curves
•
•Series resistance
•Shunt resistance
V-I curve Contd….
•
•Reverse saturation
current
•Ideality factor
Efficiency evaluation of solar cell by
Formula explanation
Materials research society of solar
cell
1. Understanding of Passivation Mechanism Heterojunction c-Si Solar
Cells
2. Efficient Silicon Heterojunction Solar Cell On P-Wafer By HotWire Chemical Vapor Deposition
3. Silicide Mediated Grown 3-Dimensional Crystalline Si Films
and Schottky Photodiodes
4.Substrate Engineering for High Efficiency Thin Film Solar Cells
Solar cell
part-II
Presented by:- Rohit Dadhich
Cross section of solar cells
Spectral distribution of radiation
intensity
Solar cell efficiency factor
•Energy conversion efficiency
•Thermodynamic efficiency limit
•Quantum efficiency
•Maximum power point
•Fill factor
Crystalline silicon solar cell-I
•introduction
Crystalline silicon solar cell-II
•Silicon cell development
Crystalline silicon solar cell-III
•Opportunities for improvement
•CZ wafers
•Change in crucible material
•Bifacial cell
Solar cell technology innovation
center at MTA MFA-I
•Introduction
•Watts peak
Solar cell technology innovation
center at MTA MFA-II
•Integrated vaccum
system
•Material used
First junction(ZnO based diode)
•1.introduction
•2.structure
•3.procedure
First junction(ZnO based diode)
•Reflection
•Reflection coefficient
of antireflection film
•Maximal generated
voltage
•Maximal current
First junction(ZnO based diode)
•Im=0.1 mA
•Vm=0.63 V
•Pm = 0.063mW
•Conversion efficiency =2.1%
Solar cell
part-III
Presented by:- satyavrat Shukla
Second ,Third and Fourth junction
Introduction
Light absorbing material-I
•Bulk
•Crystalline silicon
Light absorbing material-II
•Thin film
-cadmium telluride solar cell
-copper indium selenide
-gallium arsenide multi junction
-light absorbing dyes
-organic polymer solar cell
-silicon thin films(nano crystalline solar cell)
Realization and characterization of
ZnO/n-si solar cell by spray pyrolysis-I
• Introduction
• Experiment
1)The inter faciallayer formation
2)The top window layer deposition
Realization and characterization of
ZnO/n-si solar cell by spray pyrolysis-II
Result:-
1)As –deposited ZnO/nSi solar cell
2)Annealed ZnO/Sio2/nSi solar cell
3)ITO/ZnO/n-si solar
cell
Realization and characterization of
ZnO/n-si solar cell by spray pyrolysis-III
4) The effect of
oxidation time
Realization and characterization of
ZnO/n-si solar cell by spray pyrolysis-iv
Current research on materials &
devices
•Silicon processing
•Thin film processing
•Metamorphic multijunction solar cell
•Polymers processing
•Transparent conductors
•Photovoltaic thermal hybrid
Some important points of solar cell
•Concentrating photovoltaic
•Silicon solar cell device manufacture
•Lifespan
•Costs
conclusion
• Shown above approach is based on the rouge calculation
generation current including approximate estimation of the
integral photons flow absorption coefficient and reflection
coefficient of the applied semiconductor material the methodic
was approved for evaluation of hetero junction system based
on the ZnO-ZnSe-Si-Ge structure . Rouge estimation of
electrical parameters of presented multi-junction
semiconductor chip shown follows values:
open circuit voltage=2 volt
photo current= 40 mA
maximum voltage=1.74 volt
efficiency=45%
Thank you