Transcript Chapter 12 : Field – Effect Transistors

Chapter 12 : Field – Effect Transistors
12-1 NMOS and PMOS transistors
12-2 Load-line analysis of a simple NMOS
amplifier
12-3 Small –signal equivalent circuits
12-4 Common source amplifiers
12-5 Source followers
12-6 CMOS logic gates
MOSFET Transsistors
N-channel enhancement MOSFET
4-1. Device Structure . Fig. 4-1 . Physical structure of
the enhancement- type NMOS transistor
Fig. 4-2 . The enhancement-type NMOS transistor
with applied voltage
Applying a small vDS . Fig. 4-3 An NMOS transistor with vGS > vt and
s small vDS
Operation in the cut - off
Fig. 4-4 . The iD –vDS characteristics of the
MOSFET
With increasing vDS . Fig. 4-5 The enhancement NMOS transistor
as vDS is increased
Fig. 4-6 The drain current iD vs vDS
Fig. 4-11 The iD – vDS characteristics of an nchannel enhancement type MOSFET
Fig. 4-12 The iD-vDS characteristic for an
enhancement –type NMOS transistor in saturation
Fig. 4-7 A tapered shape caused by increasing vDS
Fig. 4-10 Circuit symbol for the n-channel
enhancement –type MOSFET
The p-Channel MOSFET
• vGS , vDS and vt are negative
• iD enters from the source terminal and leaves
through the drain terminal .
• NMOS operates faster and at lower power than
PMOS .
Fig. 4-13 Large signal equivalent circuit of an nchannel MOSFET
Fig. 4-17 Large signal equivalent circuit of the nchannel MOSFET in saturation with r0
Fig. 4-37 Small signal models for the MOSFET
Fig. 4-37 (b) with the channel length modulation
Fig. 4-40 T model of the MOSFET with r0
Chapter 12 : Field – Effect Transistors
12-1 NMOS and PMOS transistors
12-2 Load-line analysis of a simple NMOS
amplifier
12-3 Small –signal equivalent circuits
12-4 Common source amplifiers
12-5 Source followers
12-6 CMOS logic gates
Common- source amplifiers
Common- source amplifiers
10.3 CMOS Logic Gate Circuits
10.3.1 Basic structure
Fig. 10.8 Representation of a three- input CMOS logic gate