Transcript Bridging Dimensions in Organic Electronics: Assembly of

Huai-Yuan Michael Tseng
EE C235
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Inorganic semiconductor nanowire field effect
transistors (NW-FETs)
Low cost printing process
◦ Large area, flexible electronics
◦ But required sub-10um resolution
◦ Difficult to form ohmic contact when print Si NW
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Self-aligned inkjet printing technique
Printing of metal oxide NW (ZnO)
cyclohexylbenzene(CHB)
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Au lift-off
SAM treatment on Au
Au nanoparticles printed, de-wet
ZnO NW
◦ Chemical vapor deposition on a-plane
sapphire substrate
◦ dispersed in IPA/ethylene glycol then
inkjet printed
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Spin-cast PMMA
Print PEDOT:PSS
SAM used = 1H, 1H, 2H,2H-perflourodecanethiol
PMMA = polymethyl methacrylate
PEDOT:PSS = poly3,4-ethylenedioxithiophene
doped with poly-styrene sulfonate
Improved by heating
With ZnO
L=500nm
Without ZnO
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All solution process ZnO NW FETs
were demonstrated, however
Performance limited by contact
resistance as can be proved by a
longer channel length device (2um)
Could be improved by using lower
work function metal nanoparticle or
SAM treatment on Au