Transcript Radiation Effects on Emerging Electronic Materials and Devices
Radiation Effects on Emerging Electronic Materials and Devices Ron Schrimpf Vanderbilt University Electrical Engineering & Computer Science Department Institute for Space and Defense Electronics
Radiation Effects on Emerging Electronic Materials and Devices • More changes in IC technology and materials in past five years than previous forty years – SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra small devices… • Future space and defense systems require understanding radiation effects in advanced technologies – Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation…
Team Members
• • • • • • • Vanderbilt University – Electrical Engineering: Mike Alles, Dan Fleetwood, Ken Galloway, Marcus Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob Weller – Physics: Len Feldman, Sok Pantelides Arizona State University – Electrical Engineering: Hugh Barnaby University of Florida – Electrical and Computer Engineering: Mark Law, Scott Thompson Georgia Tech – Electrical and Computer Engineering: John Cressler North Carolina State University – Physics: Gerry Lucovsky Rutgers University – Chemistry: Eric Garfunkel, Gennadi Bersuker Industrial and government collaborators – IBM, Intel, Texas Instruments, Freescale, Jazz, National Semiconductor, SRC/Sematech, Sandia, NASA/DTRA, Lockheed-Martin, Oak Ridge National Lab, CFDRC
Institute for Space and Defense Electronics
Resource to support national requirements in radiation effects analysis and rad-hard design Bring academic resources/expertise and real-world engineering to bear on system-driven needs ISDE provides: • Government and industry radiation-effects resource – Modeling and simulation – Design support: rad models, hardening by design – Technology support: assessment, characterization • Flexible staffing driven by project needs – 10 Faculty – 25 Graduate students – 14 Staff and Research Engineers
Schedule —June 14 AM
8:40 9:00 9:20 9:35 MURI Overview Ron Schrimpf, Vanderbilt University Overview: Atomic-Scale Theory of Radiation-Induced Phenomena Sokrates Pantelides, Vanderbilt University Hf Impurities in Si-SiO 2 -Si Stacks Apostolos Marinopoulos, Vanderbilt University Quantum Mechanical Description of Displacement Damage Formation Matt Beck, Vanderbilt University 9:55 Role of Hydrogen in Radiation Response of Lateral PNP Bipolar Transistors Sasha Batyrev, Vanderbilt University 10:10 Doping-Type Dependence of Damage in Silicon Diodes Dan Fleetwood, Vanderbilt University 10:30 Break 11:00 Defects in Non-Crystalline and Nano-Crystalline Alternative Transition Metal Dielectrics Gerry Lucovsky, North Carolina State University 11:40 Total Dose Response of HfSiON MOS Capacitors Dakai Chen, Vanderbilt University
Schedule —June 14 PM
1:00 Overview: Radiation Effects in Emerging Materials Len Feldman, Vanderbilt University 1:20 Radiation-Induced Charge Trapping in Ultra-Thin HfO 2 Based MOSFETs Sriram Dixit, Vanderbilt University 1:40 Radiation Effects in Advanced Gate Stacks Eric Garfunkel, Rutgers University Gennadi Bersuker, Sematech 2:20 Break 2:50 Radiation Effects in SiGe Devices John Cressler, Georgia Tech 3:30 Effects of Angle of Incidence and Temperature on Latchup in 65-nm Technology John Hutson, Vanderbilt University 3:50 Radiation Challenges in Strained Si Technologies Scott Thompson, University of Florida 4:30 Discussion 6:30 Dinner
Schedule —June 15
8:00 8:30 8:50 9:10 Registration and Continental Breakfast Total Ionizing Dose Effects in Deep Submicron Bulk CMOS Technologies Hugh Barnaby, Arizona State University Band-to-Band Tunneling Induced Leakage Current Enhancement in Irradiated FD-SOI Philippe Adell, JPL Enhanced Radiation-Induced Degradation due to Excess Molecular Hydrogen Jie Chen, Arizona State University Enabling Radiation-Effects Device Simulations 9:30 9:50 Mark Law, University of Florida Overview: Monte Carlo Radiative Energy Deposition Bob Weller, Vanderbilt University 10:10 Impact of Ion Energy and Specie on Single Event Effects Analysis Robert Reed, Vanderbilt University 10:30 Break – High Speed SEE Test Set Demonstration in FGH 310 11:00 Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays Christina Howe, Vanderbilt University 11:20 Neutron-Induced Multiple-Bit Upset Alan Tipton and Jonny Pellish, Vanderbilt University 11:40 Effect of Voltage Fluctuations on SET Response of Deep Submicron Digital ICs Matt Gadlage, Vanderbilt University 12:00 Meeting Ends
DURIP-funded High-Speed SEE Test Equipment
• • • • 12.5 Gbit/s bit error rate tester 31.5 GHz analog signal generator 12 GHz real-time digital storage oscilloscope DC-40 GHz RF coax assemblies • • • DC-40 GHz probe station 100 nm-step resolution stage Configure horizontally or
vertically
• NIR laser irradiation • Broadbeam heavy ion •
Requires high-speed packaging
•
Eliminates need for high-speed packaging
Radiation Effects in Emerging Electronic Materials and Devices
Motivation
• More changes in IC technology and materials in past five years than previous forty years — impact on radiation response is dramatic
Approach
• Experimental analysis of state-of-the-art technologies through partnerships with semiconductor manufacturers • Identification of critical mechanisms through first principles modeling • Implementation and application of a revolutionary multi scale radiation-effects simulation tool to identify key challenges and develop hardening approaches
Selected Results
• Development of most accurate rate-prediction tool to date • Identification of tungsten as key rad-effects issue • Fabrication of rad-hard, reliable HfSiON gate dielectrics • Demonstration of extremely rad-hard SiGe technology • First examination of rad effects in strained-Si CMOS
Impact
• Design tools and methods demonstrated for future rad hard technologies • Greatly improved error-rate analysis tools allow implementation of more reliable space electronics • First radiation-effects characterization of most advanced technologies (strained Si, HfSiON, etc.) —essential for deployment of state-of-the-art electronics in DoD systems
Radiation Effects in Emerging Electronic Materials and Devices: Results
Radiation Response of New Materials
• Incorporation of new materials
dramatically
impacts radiation response • HfO 2 -based dielectrics and emerging high-k materials tested; HfSiON is very promising • Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) offers possibility for single-event hardening
Impact of New Device Structures
• New device technologies strongly impact single-event response and TID leakage current • SiGe HBTs, strained Si CMOS, ultra-small bulk CMOS exhibit complicated charge collection mechanisms • Floating-body SOI found to exhibit high radiation-induced off-state leakage due to tunneling
Single Events in New Technologies
• RADSAFE—First multi-scale Monte Carlo single-event/rate prediction tool • Passivation/metallization found to
dominate
SEE response in some hardened technologies • Excellent agreement with on-orbit data; conventional rate prediction methods underestimate rate by orders of magnitude
Localized Radiation Damage
• First-principles evidence of micro-melting in small devices • Displacement damage found to depend on substrate doping type • Monte-Carlo simulation tool for non-ionizing energy loss developed
Radiation Effects on Emerging Electronic Materials and Devices: Recent Results
New Error-Rate Prediction Tool
• • •
Conventional methods underestimate error rate by orders of magnitude New RADSAFE approach provides outstanding agreement with on-orbit data Demonstrates that tungsten metallization can dramatically impact error rate
• • •
First Neutron MBU Calculations Multiple-bit upsets are the key reliability issue in advanced memories Predicting MBU rate allows design of ECC and memory architecture Fraction of events resulting in MBUs doubles for grazing angles
•
First Radiation Results on HfSiON Hf-based dielectrics emerging at 45-nm and below
•
Much improved radiation response compared to standard Hf silicate films
•
Interface nitridation is the key to hardness First dynamical calculation of displace ment damage from first principles
• • •
Very large disordered regions can lead to single-event hard and soft errors Key reliability issue at 65 nm and below Possible explanation for dielectric rupture
Radiation Effects on Emerging Electronic Materials and Devices: Recent Results
Effects of Strain on SEE
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First experiments to vary strain during SEE testing planned for 2007
•
Strain leads to enhanced mobility and non-isotropic transport
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Almost all advanced CMOS will use strain engineering New Gate Dielectrics
•
Hf-based dielectrics emerging in new technologies
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Combined effects of radiation and negative-bias temperature stress much greater than expected
• • •
Multiple-Bit Upset Quantitative analysis of MBU rate in advanced SRAMs Fraction of events resulting in MBUs increases for new technologies Explanation of SEE sensitivity of cells resistant to single strikes
• • •
SEE in SiGe HBTs Microbeam testing shows charge collection from distant strikes Mechanisms identified through simulation Hardening approach proposed
New Physically-Based Method of Predicting Single-Event Error Rates
Materials Transport Calorimetry Sensitive Volumes Circuit Response Environment
(Beam/Natural)
Cross Section Error Rate TCAD
Sensitive Volumes Materials
SPICE Circuit Response MRED Transport Calorimetry
Locations Dimensions Solid Model Critical Charge Error Rate Cross Section