Transcript Mesoscopic light emitters, switches, and transformers

Optics of Nanostructures:
Science, Technology,
Applications
Sergey V. Gaponenko
Institute of Molecular and Atomic Physics
National Academy of Sciencs of Belarus
Institute of Molecular and
Atomic Physics
Established in 1992 (separated from the Inst. Physics)
Staff: 160 total (30 Dr. of Sci, 70 Ph.D)
Research topics:
• Plasma physics and atomic spectroscopy
• Molecular spectroscopy
• Photobiophysics
• Physics of nanostructures
12 research laboratories
Journal of Applied Spectroscopy publisher (since 1964)
Basic Principles
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Photonic crystal ideology
Quantum size effects in semiconductor
nanocrystals
Surface enhanced optical processes
Photonic crystals
Nanoporous alumina developed at
BSUIR
Anisotropic light scattering in nanoporous
materials
Lutich, Gaponenko, Gaponenko, Sokol, APL, 2003 in press
Quantum size effects in
semiconductor nanocrystals
4
CdS:Mn nanocrystals
Absorption
Luminescence intensity (a.u.)
0
Absorption (lg I /I)
5
Luminescence
3
2
1
0
400
600
Wavelength (nm)
800
Light convertor for Si photodetectors
Main advantage versus organic luminophores:
high photostability
2.0
Si-photodetector with
UV sensitive coating
Photocurrent (A)
1.5
1.0
0.5
0.0
300
350
400
450
500
550
600
Wavelength (nm)
650
700
750
800
Principal publications
A. Kapitonov, A. Stupak, E. Petrov,
S. Gaponenko, A.Rogach, A.
Eychmueller. Photoluminescence of
CdTe nanocrystals in aqueous
solution.
J. Phys. Chem. 103, 10109 (1999).
M.Artemyev, A.Bibik, L.Gurinovich,
S.Gaponenko, U.Woggon. Evolution
from individual to collective
electron states in a quantum dot
ensemble.
Phys. Rev. B 60,1504-1506 (1999)
M. Artemyev, L. Gurinovich, A.
Stupak, S. Gaponenko.
Luminescence of CdS
Nanoparticles Doped with Mn.
Phys. stat. sol. (b) 224, 191 (2001)
Surface enhanced optical processes
Enhanced Raman scattering
Enhanced Photoluminescence
Eu luminescence enhancement
30000
in presence
of silver colloids
7% мол. Eu O
25000
2
3
Intensity
1 - no Ag.
2 - 0,5 % AgNO .
20000
3
3 - 5 % AgNO .
3
3
15000
2
10000
5000
1
400
500
600
Wavelength (Nanometers)
Malashkevich et al, in press
700
High-sensitive SERS molecular analysys
Gaponenko, Gaiduk, Kulakovich et al. JETP Lett. 2001, 74, 324.
Basic Technologies
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Electrochemical etching
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Colloidal chemistry
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Sol-gel processes
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High-energy plasma flow
processes
Nanoporous alumina
BSUIR
CdSe nanocrystals
СdTe nanocrystals
Gaponenko et al.
Gaponenko et al.
J. Appl. Phys. 1995,
JETP lett. 1998
In cooperation with Belarussian Sate University
Colloidal crystals
Petrov, Bogomolov, Kalosha, Gaponenko, PRL 1998
cooperation with Russian Academy of Sciences
and Inst. Powder Metallurgy
Metal colloids
High-energy plasma flow processes
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discharge duration
— 100  150 sec;
peak current
— 50  120 kA;
plasma velocity — (3  7)x106 cm/sec;
electron density — 1016  1018 cm-3;
plasma temperature — 2  4 eV
Regular surface structures formed on silicon wafer
Tasks
• Novel luminophores and efficient light
emitting devices
• Spectral transformers for silicon solar cells
and photodetectors
• Ultrasensitive chemical analysis
• Si surface processing
Optical data coding and security systems
Spectral portraits of numbers
Current projects
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National program “Electronics”
National program “Nanotechnologies”
National program “Plasma dynamics”
National Basic Res. Fnd. Projects (5)
International INTAS projects (2 projects)
NATO for Peace project
Int. Sci. Techn. Center project
Volkswagen Shiftung project
Cooperaton agreement with Swiss Sherer Institute
European network of excellence “Nanophotonics”