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CONTROL OF ELECTRON ENERGY DISTRIBUTIONS AND FLUX RATIOS IN PULSED CAPACITIVELY COUPLED PLASMAS* Sang-Heon Songa) and Mark J. Kushnerb) a)Department of Nuclear Engineering and Radiological Sciences University of Michigan, Ann Arbor, MI 48109, USA [email protected] b)Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109, USA [email protected] http://uigelz.eecs.umich.edu Oct 2010 AVS * Work supported by DOE Plasma Science Center and Semiconductor Research Corp. AGENDA Motivation for controlling f(e) Description of the model Typical Ar pulsed plasma properties Typical CF4/O2 pulsed plasma properties f(e) and flux ratios with different PRF Duty Cycle Pressure Concluding Remarks SHS_MJK_AVS2010_02 University of Michigan Institute for Plasma Science & Engr. CONTROL OF ELECTRON KINETICS- f(e) Controlling the generation of reactive species for technological devices benefits from customizing the electron energy (velocity) distribution function. Need SiH3 radicals* LCD Solar Cell k SiH3 + H + e e + SiH4 dN k r , t dt nekij r , t N j i, j 12 2e kij r , t f e , r , t e d e 0 me df v , r , t dt v x f r , v qE r , t me * Ref: Tatsuya Ohira, Phys. Rev. B 52 (1995) SHS_MJK_AVS2010_03 f v , r , t v f v , r , t t c University of Michigan Institute for Plasma Science & Engr. HYBRID PLASMA EQUIPMENT MODEL (HPEM) Electron Monte Carlo Simulation Te, S, k Fluid Kinetics Module E, Ni, ne, Ti Fluid equations (continuity, momentum, energy) Poisson’s equation Fluid Kinetics Module: Heavy particle and electron continuity, momentum, energy Poisson’s equation Electron Monte Carlo Simulation: Includes secondary electron transport Captures anomalous electron heating Includes electron-electron collisions SHS_MJK_AVS2010_04 University of Michigan Institute for Plasma Science & Engr. REACTOR GEOMETRY 2D, cylindrically symmetric Ar, CF4/O2, 10 – 40 mTorr, 200 sccm Base conditions Lower electrode: LF = 10 MHz, 300 W, CW Upper electrode: HF = 40 MHz, 500 W, Pulsed SHS_MJK_AVS2010_05 University of Michigan Institute for Plasma Science & Engr. PULSE POWER Use of pulse power provides a means for controlling f(e). Pulsing enables ionization to exceed electron losses during a portion of the period – ionization only needs to equal electron losses averaged over the pulse period. Pmax Power(t) Pave Duty Cycle Pt dt 1 0 Pmin = 1/PRF Time Pulse power for high frequency. Duty-cycle = 25%, PRF = 100 kHz, 415 kHz Average Power = 500 W SHS_MJK_AVS2010_06 University of Michigan Institute for Plasma Science & Engr. Ar SHS_MJK_AVS2010_07 PULSED CCP: Ar, 40 mTorr Pulsing with a PRF and moderate duty cycle produces nominal intra-cycles changes [e] but does modulate f(e). ANIMATION SLIDE-GIF LF = 10 MHz, 300 W HF = 40 MHz, pulsed 500 W PRF = 100 kHz, Duty-cycle = 25% [e] f(e) MIN VHF 226 V VLF 106 V MAX Te SHS_MJK_AVS2010_08 University of Michigan Institute for Plasma Science & Engr. PULSED CCP: Ar, DUTY CYCLE Excursions of tail are more extreme with lower duty cycle – more likely to reach high thresholds. ANIMATION SLIDE-GIF Cycle Average Duty cycle = 25% Duty cycle = 50% VHF 226 V VLF 106 V VHF 128 V VLF 67 V LF 10 MHz, pulsed HF 40 MHz PRF = 100 kHz, Ar 40 mTorr SHS_MJK_AVS2010_09 University of Michigan Institute for Plasma Science & Engr. PULSED CCP: Ar, PRESSURE Pulsed systems are more sensitive to pressure due to differences in the rates of thermalization in the afterglow. ANIMATION SLIDE-GIF Cycle Average 10 mTorr 40 mTorr VHF 274 V VLF 146 V VHF 226 V VLF 106 V LF 10 MHz, pulsed HF 40 MHz PRF = 100 kHz SHS_MJK_AVS2010_10 University of Michigan Institute for Plasma Science & Engr. CF4/O2 SHS_MJK_AVS2010_11 CW ELECTRON DENSITY At 415 kHz, the electron density is not significantly modulated by pulsing, so the plasma is quasi-CW. PRF=415 kHz PRF=100 kHz At 100 kHz, modulation in [e] occurs due to electron losses during the longer inter-pulse period. The lower PRF is less uniform due to larger bulk electron losses during longer pulse-off cycle. 40 mTorr, CF4/O2=80/20, 200 sccm LF = 10 MHz, 300 W HF = 40 MHz, 500 W (CW or pulse) MIN SHS_MJK_AVS2010_12 ANIMATION SLIDE-GIF MAX University of Michigan Institute for Plasma Science & Engr. CW PRF=415 kHz ELECTRON SOURCES BY BULK ELECTRONS The electrons have two groups: bulk low energy electrons and beam-like secondary electrons. The electron source by bulk electron is negative due to electron attachment and dissociative recombination. PRF=100 kHz Only at the start of the pulseon cycle, is there a positive electron source due to the overshoot of E/N. 40 mTorr, CF4/O2=80/20, 200 sccm LF 300 W, HF 500 W MIN SHS_MJK_AVS2010_13 ANIMATION SLIDE-GIF MAX University of Michigan Institute for Plasma Science & Engr. CW PRF=415 kHz ELECTRON SOURCES BY BEAM ELECTRONS The beam electrons result from secondary emission from electrodes and acceleration in sheaths. The electron source by beam electron is always positive. PRF=100 kHz The electron source by beam electrons compensates the electron losses and sustains the plasma. 40 mTorr, CF4/O2=80/20, 200 sccm LF = 10 MHz, 300 W HF = 40 MHz, 500 W (CW or pulse) MIN SHS_MJK_AVS2010_14 ANIMATION SLIDE-GIF MAX University of Michigan Institute for Plasma Science & Engr. TYPICAL f(e): CF4/O2 vs. Ar Ar CF4/O2 Less Maxwellian f(e) with CF4/O2 due to lower e-e collisions. VHF 226 V VLF 106 V VHF 203 V VLF 168 V Enhanced sheath heating with CF4/O2 due to lower plasma density. Tail of f(e) comes up to compensate for the attachment and recombination that occurs at lower energy. 40 mTorr, 200 sccm LF = 10 MHz, 300 W HF = 40 MHz, 500 W (25% dc) SHS_MJK_AVS2010_15 ANIMATION SLIDE-GIF University of Michigan Institute for Plasma Science & Engr. RATIO OF FLUXES: CF4/O2 In etching of dielectrics in fluorocarbon gas mixtures, the polymer layer thickness depends on ratio of fluxes. Ions – Activation of dielectric etch, sputtering of polymer CFx radicals – Formation of polymer O – Etching of polymer F – Diffusion through polymer, etch of dielectric and polymer Investigate flux ratios with varying PRF Duty cycle Pressure SHS_MJK_AVS2010_16 Flux Ratios: Poly = (CF3+CF2+CF+C) / Ions O = O / Ions F = F / Ions University of Michigan Institute for Plasma Science & Engr. f(e): CF4/O2, PRF Average PRF = 100 kHz The time averaged f(e) for pulsing is similar to CW excitation. VHF 203 V VLF 168 V Extension of tail of f(e) beyond CW excitation during pulsing produces different excitation and ionization rates, and different mix of fluxes to wafer. ANIMATION SLIDE-GIF 40 mTorr, CF4/O2=80/20, 200 sccm LF = 10 MHz, 300 W HF = 40 MHz, 500 W (25% dc) SHS_MJK_AVS2010_17 University of Michigan Institute for Plasma Science & Engr. RATIO OF FLUXES: CF4/O2, PRF Ratios of fluxes are tunable using pulsed excitation. Average Flux Ratio Polymer layer thickness may be reduced by pulsed excitation because poly to ion flux ratio decreases. 6.0 CW 5.0 4.0 100 100 CW 3.0 2.0 415 415 kHz 1.0 415 100 CW 0.0 F F O O Poly POLY 40 mTorr, CF4/O2=80/20, 200 sccm, Duty-cycle = 25% LF = 10 MHz, 300 W University of Michigan HF = 40 MHz, 500 W SHS_MJK_AVS2010_18 Institute for Plasma Science & Engr. f(e): CF4/O2, DUTY CYCLE Control of average f(e) over with changes in duty cycle is limited if keep power constant. ANIMATION SLIDE-GIF Cycle Average Duty cycle = 25% Duty cycle = 50% VHF 203 V VLF 168 V VHF 191 V VLF 168 V 40 mTorr, CF4/O2=80/20, 200 sccm University of Michigan LF 10 MHz, Pulsed HF 40 MHz, PRF = 100 kHz Institute for Plasma Science & Engr. SHS_MJK_AVS2010_19 RATIO OF FLUXES: CF4/O2, DUTY CYCLE Average Flux Ratio Flux ratio control is limited if keep power constant. With smaller duty cycle, polymer flux ratio is more reduced compared to the others. 6.0 CW 5.0 50% 4.0 25% 25% 50% CW 3.0 2.0 25% 50% CW 1.0 0.0 F F O O Poly LF 10 MHz, Pulsed HF 40 MHz, PRF = 100 kHz 40 mTorr, CF4/O2=80/20, 200 sccm SHS_MJK_AVS2010_20 POLY University of Michigan Institute for Plasma Science & Engr. f(e): CF4/O2, PRESSURE Pulsed systems are sensitive to pressure due to differences in the rates of thermalization in the afterglow. ANIMATION SLIDE-GIF Cycle Average 10 mTorr 40 mTorr VHF 233 V VLF 188 V VHF 191 V VLF 168 V CF4/O2=80/20, 200 sccm, PRF = 100 kHz LF 10 MHz, Pulsed HF 40 MHz SHS_MJK_AVS2010_21 University of Michigan Institute for Plasma Science & Engr. RATIO OF FLUXES: CF4/O2, PRESSURE Average Flux Ratio Flux ratios decrease as pressure decreases. Polymer layer thickness may be reduced with lower pressure in the pulsed CCP. 6.0 5.0 4.0 3.0 2.0 CW 40 mTorr 10 P P CW 10 P CW 1.0 P CW 40 10 P CW P CW 0.0 F F CF4/O2=80/20, 200 sccm LF = 10 MHz, 300 W HF = 40 MHz, 500 W SHS_MJK_AVS2010_22 40 P: Pulsed excitation CW: CW excitation O O Poly POLY PRF = 100 kHz, Duty-cycle = 25% University of Michigan Institute for Plasma Science & Engr. CONCLUDING REMARKS Extension of tail of f(e) beyond CW excitation produces different mix of fluxes. Ratios of fluxes are tunable using pulsed excitation. Different PRF provide different flux ratios due to different relaxation time during pulse-off cycle. Duty cycle is another knob to control f(e) and flux ratios, but it is limited if keep power constant Pressure provide another freedom for customizing f(e) and flux ratios in pulsed CCPs. SHS_MJK_AVS2010_23