Transcript Document

Institute of Microelectronics
NCSR Demokritos
Dr Androula Nassiopoulou
Director
ORGANIZATIONAL STRUCTURE OF
NCSR DEMOKRITOS
Ministry of Development
General Secretariat for
Research and Technology
NCSR DEMOKRITOS
Central
administration
Department for
Technical Support
Secretariat of
Special Accounts
Institute of
Microelectronics
(IMEL)
Institute of
Chemistry
Institute of
Materials
Science
Institute of
Radioisotopes &
Radiodiagnostic
Products
Liaison Office
Institute of
Nuclear Physics
Institute of Informatics
and Telecommunications
Technology Park
Institute of
Nuclear
Technology
Institute of Biology
ACADEMIC AND TECHNOLOGICAL
EXCELLENCE AT IMEL
IMEL: 20 years of research and technology development
Achievements:
Infrastructure and research facilities for Micro and
Nanotechnology unique in Greece
• Fully equipped silicon processing laboratory
• E-beam lithography equipment
• Micromachining and Sensor laboratory
• Fully equipped laboratory for characterization of
materials, devices and structures
Important know-how
Experienced personnel
An Intellectual property portfolio, which continues to
expand
IMEL
Institute Director
International Scientific
Advisory Committee
Institute Administration and
Technical Support
Institute Advisory Board
Secretariat
Education and training
Managerial office provisions
Group of technicians for
technical support
Program I: Micro and
Nanotechnologies
Program II: Micro
and Nanoelectronics
Services in Micro,
Nanotechnologies and
Microsystems
Program III: Micro
and Nano-Systems
Central facilities for Silicon
Processing
PATTERNING TECHNOLOGIES
Lithography and Plasma Etching
FOCUS OF RESEARCH
Development of novel materials, processes
and process simulation methods for micro
and nanofabrication
Key Researchers: M. Hatzakis, IBM fellow and ex-director of IMEL
E. Gogolides
P. Argitis
N. Glezos
Frontiers in Lithography (193 / 157nm, EUV, e-beam),
Nano-patterning, MEMS and BioMEMS patterning
The problems
The solutions
• Smaller Devices  Smaller λ in optical lithography:193,
157nm, EUV, e-beam
• Bio Mems Patterning
•Need to develop new resists and processes
• Thick (0.4μm) to Ultra thin (0.15μm) resist films
•Need to increase plasma resistance of photoresists
• Critical dimension becomes less than 70nm
•Need to Reduce Line Edge Roughness
• Develop new resists: aliphatic to fluorinated or Silicon
containing polymers
• Develop new environmentally friendly and biocompatible
photoresists
• Add etch resistance compounds in resist formulation
• Understand and Simulate Line Edge Roughness using
Fractal Theory
• Develop lithography and plasma etching simulators
• Develop new etching processes for MEMS and
Nanotechnology
Frontiers in Optical Lithography (193 - 157 nm)
New resists for 193nm lithography
Single layer acrylate. Positive, 93nm
lines, Negative 150nm lines; P. Argitis et al.
Bilayer resist for 157nm based on
Siloxanes. 70nm lines
A. Tserepi et al., J. Vac. Sci. Technol. Nov. 2000,
Microelec. Engng. 2001
Greek Patent
C. Diakouakos et al. Microelec. Engng. 2001
Novel etch resistance compounds synthesized for use as resist additives
NOVEL MIXED
DERIVATIVES
O
O
UV
UV SOL SUBL ETCH O.N. R.P .
RATE
193 nm 248 nm
NOVEL MIXED
DERIVATIVES
O
0.05
0
0.36 ** 160 C 2600 2.25 0.78
O
O
O
(XII)
UV
0.17
0.45
**
0
160 C 3100 2.50 0.69
0.20
0.52
*
0
160 C 2700 2.39 0.72
(XIII)
(XI)
NH
SOL SUBL ETCH O.N. R.P .
RATE
UV
193 nm 248 nm
O
0.26
0.86
0
** 130 C 2800 2.08 0.88
O
O
(XIV)
Si and SiO2 Etching in Fluorocarbon Plasmas
Dielectric Etching, Optoelectronics and MEMS etching
• Fluorocarbon plasma and HDP reactors used
• Both Experimental and Theoretical Work
• Many problems (RIE lag, etch stop, Inverse RIE lag, roughness)
• New processes needed in ICP tools, with reduced roughness,
for both MEMS and Nanotechnology
• Detailed models for etching in fluorocarbon plasmas
• Prediction of ASPECT RATIO dependent phenomena
SEMICONDUCTOR NANOSTRUCTURES.
Materials, Processes, Properties and
Nanoelectronic Devices
FOCUS OF RESEARCH
 Nanopatterning (nanostructuring using the “topdown” approach)
 Silicon nanocrystal growth and characterization
 Si/SiO2 multilayers and superlattices
 Si/CaF2 multilayers and superlattices
 Silicon and Germanium nanocrystals in SiO2 by
different techniques
 Nanoelectronic devices for memory, light emitting
and other applications
 Theoretical work, process and device modeling
Key Researchers: A.G. Nassiopoulou
D. Tsoukalas
P. Normand
Si-Nanocrystal MOS Memory Devices Obtained
by Low-Energy Ion-Beam-Synthesis
Candidates for Non-Volatile Dynamic
Memory Applications
ESSDERC’2000, Appl. Phys. Lett. 2000
SILICON SENSORS AND MICROSYSTEMS
FOCUS OF RESEARCH
Silicon micromachining techniques and processes
Silicon sensor devices and microsystems
Modeling, characterization and testing of sensors
Microsystem design, fabrication and
characterization
Development of read-out electronics and
packaging
NOVEL PROCESS FOR THE
FABRICATION OF SUSPENDED
MEMBRANES FOR THERMAL SENSORS
 The process is based on the
isotropic etching of silicon using
High Density Plasma etching.
 High lateral etch rates can be
achieved (6-7μm/min).
 The process is CMOS
compatible.
 Oxide/nitride membranes with
dimensions 100x100μm2, can
be easily fabricated.
100μm
WAFER BONDING USED IN
SENSOR TECHNOLOGY
Pressure
sensors
Apply wafer
bonding
technique
Dry release
processes and
vapour sensing
A technology to combine
heterogeneous functions
3D View of pressure Sensor
e
Measured capacitanc
Applied Pressure
SiO 2
Substrate
contact
SEM cross section images
Si membrane
Doped Si Substrate
COMBINING DRY RELEASED CANTILEVERS
WITH POLYMERS TO MEASURE HUMIDITY
Parallel beam to
substrate
Stress effect
INTEGRATED SILICON OPTICAL BIOSENSORS
S pacer
B o ro n
Spacer
B o ro n
S i 3 N 4 F ib e r
S iO
2
P ++
P ++
N
A v a la n c h e d io d e
S iO
2
+
L ig h t E m i tt e r
D e te c to r
N S u b s tr a te
 Monolithically Integrated Silicon Light Emitters,
Optical Fibers and Detectors.
 Optical Coupling Efficiency 40%.
 High Stable and Repeatable Measurements of the
Detector Photocurrent.
 Five Mask Process with Standard IC Technology
MICROELECTRONIC DESIGN FOR
FUTURE OE LINKS
FOCUS OF RESEARCH
Develop innovative ICs for optoelectronic links
Implement phenomenological models for
optoelectronic devices (photodiodes, VCSELs, etc.)
in IC design environment
Develop a wafer-scale integration technology for
high-density OE links
IMEL’s infrastructure 1
 Silicon processing equipment (unique in Greece)
•Clean room area of 300 m2
•Laminal flow chemical benches
•Thermal processing
•Chemical Vapor Deposition
•Thermal evaporation (sputtering, e- gun evaporation)
•Ion implantation
•Optical lithography systems
•Electron beam lithography system
•Plasma Processing (RIE, ICP)
•Process Inspection equipment
IMEL’s infrastructure 2
Characterization equipment
 Electrical characterization equipment
 Probe stations
 Optical characterization
 Microscopy equipment, ellipsometry
 Sensor characterization (gas, flow, pressure)
Packaging equipment (Dicing saw, wire bonding, die bonder)
Chemistry laboratory
Design and modeling / simulation tools
 7 Workstations (2HP C160, 1HP 9000/785, 2 Sun Sparc 20, 2 Sun
Sparc Ultra 1, 1HP 9000/720)
 Design software (Mentor graphics: 4 seats, Cadence: 2 seats,
synopsis: 2 seats, orcad for PCBs), MEMCAD 4.6, ANSYS and
Silvaco softwares.
PERSONNEL
Research Scienctists
11
Research engineers
2
Post doctoral scientists
6
Phd students
11
Technicians
3
Administrative personnel
2
Personnel on contract: a) Scientific
6
b) Technicians
Total
4
45
EDUCATION AND TRAINING
DEVELOPMENT OF HUMAN RESOURCES
IMEL COORDINATES AN EDUCATIONAL PROGRAMME (EPEAEK)
ON MICROELECTRONICS FOR MASTER AND PhD DEGREES-IN
COLLABORATION WITH THE UNIVERSITY OF ATHENS
Start-date :1/10/1998
Duration of the programme related to the MSc degree : 18
months
Duration of PhD cycle : 4 years
Number of students : 15 / year
•IMEL is partly engaged in two other MSc and PhD programs in
collaboration with the National Technical University of Athens
(New materials) and the University of Patras (System design)
respectively.
IMEL organizes every year :
•Summer Schools on selected areas, addressed to graduate
students.
•Training courses, addressed to research scientists, engineers
and technicians.
•Conferences, workshops etc.
YEAR 2002
A CENTER OF EXCELLENCE IN
MICRO, NANOTECHNOLOGIES AND
MICROSYSTEMS
AT IMEL/NCSR “DEMOKRITOS”
A Center of Excellence in Micro, Nanotechnologies and
Microsystems has been established in the year 2002 at
IMEL/NCSR “Demokritos”, supported by the Greek
General Secretariat for Research and Technology in the
Ministry of Development.
MAIN OBJECTIVES
 To
further promote long term research into
understanding phenomena, mastering processes
and developing research tools.
 To promote development of fundamental knowledge
 To promote development of novel products and
production processes
 To develop human potential by educational and
training activities
 To develop the access to services in advanced
processes and high technology
 To promote the transfer of technology to industry.
 To further promote cooperative research and
technological and educational activities
RESEARCH ACTIVITIES IN THE ABOVE FIELDS
1. Micro and Nanofabrication
 Optical lithography and lithographic materials
 Electron beam lithography.
 Etching processes
 Thermal processes
 Thin film deposition techniques
2. Nanoelectronic devices for integrated circuits
 Single electron transistors, resonant tunneling devices, molecular
devices and interconnections of devices
 Optical and optoelectronic links
 Self-assembled building blocks for nanoscale ICs
3. New electronic materials
 Seniconductor nanocrystals and other low dimensional structures
in different isolating matrices
 Molecular materials
4. Microsystems and Sensors
MMN Greek Network on Microelectronics,
Microsystems and Nanotechnology
Main objectives
 To promote collaboration between all national
organizations involved in Microelectronics, including
research centers, universities and private sector.
 To develop mechanisms to promote awareness of
worldwide scientific and technological development
 To develop cooperative educational and training
activities, in order to increase the human potential of
trained people in the above technologies