Transcript Folie 1

Status MVD
Christian Müntz, et al.
(Goethe University, Frankfurt, Germany)
MoU (2007-8):
BMBF (2006-9):
Work Packages
Conceptual
Design
Radiation
Hardness &
Speed
Demonstrator
Sensor
Chip
Carriage Read-Out
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Outline
MVD/STS Parallel Session:
Sensor
Demonstrator
Conceptual
Design
Supported by
• 3 BA students
• 1 Dipl. Student
(Univ. Frankfurt)
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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M16
• Successful beam test 2007 (CERN, p)
• On-chip discrimination, on-pixel CDS
Sensor
M22
•,Successful beam test summer 2008
• M16 successor w/ larger surface
• New pixel design: +rad. hard., +S/N
• Smaller pixels (18,4 mm)
• Detection efficiency: >99.8%
• Fake hit rate: O(10-4 – 10-5)
• Spatial resolution: ~3.5 µm (~ Pitch / 5)
SUZE-1
• data sparsification unit (Ø)
• cluster finding
• Successfully tested: Can handle up to
100 hits/frame at 104 frames/s
M26
• Add functionalities of M22 & SUZE-1
• Submission Nov. 2008
Bonding.
Sensors – Speed: //-R/O, Ø
Readout bus
Pixel column
MIMOSA-16 and 22
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
Discr. Ø
SUZE-1
MIMOSA 22
SUZE-1
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Sensors: Radiation Hardness – Pixel Geometry
M19
•
•
•
Goal: improve Charge
Collection Efficiency (CCE), and
hence Radiation Hardness
Strategy: reduce escape
probability of diffusing electrons
CCE increase!
Noise increase!
 no gain in S/N!
 room for improvement!
Standard, M18
Type 1, M19
Type 2, M19
1,0
0,9
T= -20 °C
0,8
CCE with 4 pixels
•
0,7
0,6
0,5
0,4
0,3
MIMOSA-19 Diode 1
MIMOSA-19 Diode 2
MIMOSA-18
0,2
0,1
0,0
0,0
12
5,0x10
13
1,0x10
13
1,5x10
13
2,0x10
Radiation Dose [n/cm²]
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Random Telegraph Signal:
• Build-in “feature”
• Jumping between 2 levels
fakes a signal
•Increases fake hit rate!
Signal [ADC]
Sensors: Radiation Hardness - RTS
Time/Frame #
• Up to 10% of all pixels
• No unique finger print!
→ RTS pixels remain sensitive
→ RTS: 60-80% of all fake hits
→ cooling helps!
Fake hit rate
• MIMOSA-18 irradiated at
MEDAPP, FRM II, Munich)
-3
10
-4
10
40 °C
20 °C
0 °C
-5
10
0,0
12
5,0x10
13
1,0x10
13
1,5x10
13
2,0x10
Radiation Dose [n/cm²]
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Sensors: Cryogenic Operation in Vacuum
 LN2-cooling
 Vacuum operation (10-8 mbar)
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Sensors: Cryogenic Operation
LN2 reservoir
Heat sink
FEE
Heat sink
sensor
Simulation:
-120°C .... -130°C
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Demonstrator: Integration - Components
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Demonstrator: Integration - Sensor
2 Mimosa 20 / Mimo*3M:
•
•
•
•
•
Differential output, simplifies FPC design (long cable)
replaces 4xM17 / MimoTel
204k Pixel
10x20 mm²
FPC on top, maximum thermal contact to support
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Demonstrator: Integration - Carrier
X0 / d-CFC
"Flexural-weighted" Radiation Length vs. Thermal Stability
800,00
700,00
600,00
500,00
400,00
300,00
200,00
100,00
0,00
RVC
1,00E-02
C
Al
Si
Cu
Glass
PG
TPG
CVD
RVC
CFC
SCF-foam (8%)
Al foam (8%)
TPG
SCF-foam (8%)
CVD
• Advanced Carbon materials
• not yet optimized regarding material
budget: 0.43 % X0
• Tests: Cutting, thinning (TPG),
Gluing
CFC
Al foam (8%) Glass
1,00E-01
Al
C Cu
Si
PG
1,00E+00 1,00E+01 1,00E+02 1,00E+03 1,00E+04
Thermal Stability k/CTE
• Simulations (NX-Ideas): Thermal
& mechanical properties
 DT = 200C (4 cm) along 2 Mi20
Temperature Gradient
Si-dummy
RVC
TPG
6.7 mm
Delta T
on Chips within ~4cm
50
45
40
35
30
25
20
15
10
5
0
50 100 150 200 250 300 350 400 450 500 550
TPG thickness / [µm]
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Demonstrator: Integration - Flex
Finepitch connector
Status:
Scheme is ready
• Contact to companies established
• Layout is ongoing
•
To-Do:
•
Exercise with dummies:
- Positioning/handling
- Gluing
- Bonding
Signal
(ground-lines)
Ground
Equipment:
Manual bond station
- Semi-automatic probe station
(SÜSS PA200)
Bias
Chip
-
Carrier (TPG)
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Interlude:
Ultra-thin MVD
•
CVD Diamond technology (Fraunhofer)
– comprises functionalities of the carrier (mechanical stability
& heat conduction) and flex cable
– Financial contribution to R&D @ Fraunhofer IZM (Munich)
– Work in progress, in cooperation with IPHC (Strasbourg)
•
3-D interconnects technology (IMEC)
– Thinned sensors (~ 30 mm) embedded in a thin film of
polyimide/silicone: “3-D Waver Level Packaging”
– 10 mm lines/structures on top of the film
– ~ 50 mm film, mounted on a support (e.g. TPG)
– Financial contribution to R&D @ IMEC (Belgium) planned.
– Work in progress, in cooperation with IPHC (Strasbourg)
Interconnects
Sensor
Silicone
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Mi20
Demo-Aux-board
Flex-cable
MAPS
add-on-board
50 PIN SUB-D Con
Mi20
Flex-Con
Demonstrator: Read-Out
Mi20:
• 4 analog diff. signals,360 x 640 pixel/frame, 50MHz
Demo-Aux:
• Analog buffer, interface, Mi20-ctrl
• Status: schematics ready, layout Nov. 08
Trb2
I/O
card
Opt.
link
Add-on board:
• 4 x 12bit ADCs
• Virtex IV LX 40 FPGA and memory banks for online
data-processing, flexible platform for code development
• Status: 12 layer board is completed and tested
TRB: ready (HADES-DAQ), R/O via I/O card
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Demonstrator: Read-Out – 1st Data
Measured sub matrix
with pixel defects:
Hardware Setup:
• Mi20 mounted on standard IPHC
board
• Add-on board, ADC calibration
• Trb2
• Fast I/O card
Data processing:
• VHDL: Correlated double sampling,
bit-reduction, threshold, clusterfinding, data-output-interface
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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MVD: Occupancy - d-Electrons
d-electrons (1 Au ion)
© J. Vassiliev
Direct d
107 ions/s, 1% int. target, DTMAPS = 10 ms
 1 reaction + 100 ions
 560 d-hits @ z = 10 cm
 local occupancy increase: up to factor 4
No action:
 440 (direct d) + 120 (spiraling d)
 2 hot spots w/ 0.9 hits/event/mm2
Absorber & modified B-Field:
 260 (direct d) + 35 (spiraling d)
2 hot spots w/ 0.6 hits/event/mm2
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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MVD: Occupancy & Data Flow
Absorber
& B-modif.
28 bits/hit:
• Seed-address
• 9 adjacent cells: 0,1
s = pixel-pitch / 5
(no headers)
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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MVD: Design & Optimization
• Detector lifetime due to dose:
- @10 cm => 12.0 x 1011 min. bias coll.
- @ 5 cm => 4.4 x 1011 min. bias coll. (46 days at
105 coll/s)…may be ok!
• Occupancy (including d-electrons):
- Cluster merging probability ~ 1% → 8 hits / mm2
→ pile-up = 2 @ 5 cm, ~ 2x105 coll/s, with 10 ms
integration time
- Track matching accuracy: Pointing resolution
MVD2-MVD1 ~ cluster size ~ 20 mm
• 3 MVD stations @ 5, 7.5 and 11.5 cm
• MVD – STS track matching? Additional detector?
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
Target
MVD 1
z=10cm
MVD 2
z=20cm
?
Target
MVD
Strip 1
z=30cm
STS 1, z = 30 cm
 Possible at z1 = 5 cm with a realistic material budget
of 0.5 % X0 (multiple-scattering dominated!), however:
Standard:
z = 5 cm
z = 7.5 cm
z = 11.5 cm
Open charm physics: IP-resolution ~ 45 mm
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MVD: Simulations & Digitizer
Point → Cluster, for non-depleted sensors
• Consider track segments and tune:
 Charge spread sQ
 Charge thresholds
 Cluster shapes
(Inclined tracks, different pixel geometries)
No Electric Field:
θ
diffusing
electrons
• Tuning: Compare with beam test @ CERNSPS: 120 GeV p, Mi17 (30 μm pitch, 14 μm
epi), 0-80 degrees, no B
sensitive volume
Preliminary!
• Develop cluster finding algorithms:
→ Track reconstruction efficiency (@ 5cm):
- central Au+Au, 25 AGeV: 96 %
- add d-electrons (100 ions): ~10% of
reconstructed clusters are merged (no
event pile-up, yet), see coloured symbols !
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Demonstrator
•
•
TDR
Time Scale: Technical Design Report 3 years prior to 1st run, followed by the
start of the MVD construction → 2012/13
IMoU-MVD Draft (not covering the construction)
– Anticipated work share:
Sensor:
Design: IPHC
R&D on radiation hardness: IPHC, IKF
On-chip data processing and sparsification: IPHC
Quality assurance: IKF
Sensor Integration/Prototyping: IKF
Read-out/DAQ, sparsification (off-chip) & interface
Mechanics, cables
Quality assurance
Infrastructure/Operation: IKF
Cooling, Services, Controls
Simulation detector layout
Physics performance: IPHC, IKF
Engineering: IKF
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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Summary
Demonstrator
Conceptual
Design
Radiation
Hardness
Sensors:
• Progress in Rad.-Hard. Studies as well as Concepts of Speed Optimization
and Sensor Integration
Demonstrator:
• Design ready, Components in-house, 1st Carrier, R/O, Realized in 2009
Conceptual Design:
• New Technologies are being explored
• Studies of the Environment, MVD Optimization, Substantial Improvements in
Simulation
IMoU: Draft ready, covering the period until the TDR
Christian Müntz (Univ. Frankfurt) – 12th CBM Collaboration Meeting, Dubna, Oct. 2008
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