Transcript Emerging Research Logic Devices1 PIDS ITWG Emerging New

ITRS Public Conference
Emerging Research Devices
2011 ERD Chapter
Jim Hutchby – SRC
December 14, 2011
1 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
Emerging Research Devices Working Group
Hiro Akinaga
AIST
Franz Kreupl
Tech. U. Munich
Tetsuya Asai
Hokkaido U.
 Zoran Krivokapic
GLOBALFOUNDRIES
Yuji Awano
Keio U.
 Kee-Won Kwon
Seong Kyun Kwan U.
George Bourianoff
Intel
 Jong-Ho Lee
Hanyang U.
Michel Brillouet
CEA/LETI
 Thomas Liew
ASTAR DSI
John Carruthers
PSU
 Lou Lome
IDA
Ralph Cavin
SRC
 Matthew Marinella
SNL
Chorn-Ping Chang
AMAT
 Hiroshi Mizuta
U. Southampton
An Chen
GLFOUNDRIES  Kwok Ng
SRC
U-In Chung
Samsung
 Fumiyuki Nihei
NEC
Byung Jin Cho
KAIST
 Dmitri Nikonov
Intel
Sung Woong Chung
Hynix
 Kei Noda
Kyoto U.
Luigi Colombo
TI
 Ferdinand Peper
NICT
Shamik Das
Mitre
 Er-Xuan Ping
AMAT
Simon Deleonibus
LETI
 Yaw Obeng
NIST
Bob Doering
TI
 Yutaka Ohno
Nagoya U.
Tetsua Endoh
Tohoku U.
 Dave Roberts
Nantero
Bob Fontana
IBM
 Shintaro Sato
Fujitsu Labs
Paul Franzon
NCSU
 Barry Schechtman
INSIC
Akira Fujiwara
NTT
 Sadas Shankar
Intel
Mike Garner
Consultant
 Takahiro Shinada
Waseda U.
Dan Hammerstrom
PSU
 Masayuki Shirane
U. Tokyo
Wilfried Haensch
IBM
 Kaushal Singh
AMAT
Tsuyoshi Hasegawa
NIMS
 Satoshi Sugahara
Tokyo Tech
Shigenori Hayashi
Matsushita
 Shin-ichi Takagi
U. Tokyo
Dan Herr
SRC
 Ken Uchida
Toshiba
Toshiro Hiramoto
U. Tokyo
 Thomas Vogelsang
Rambus
Matsuo Hidaka
ISTEK
 Yasuo Wada
Toyo U.
Jim Hutchby
SRC
 Rainer Waser
RWTH A
Adrian Ionescu
EPFL
 Franz Widershoven
NXP
Kiyoshi Kawabata
Renesas Tech  Jeff Welser
NRI/IBM
Seiichiro Kawamura
Selete
 Philip Wong
Stanford U.
Suhwan Kim
Seoul Nation U  Dirk Wouters
IMEC
Hyoungjoon Kim
Samsung
 Kojiro Yagami
Sony
Atsuhiro Kinoshita
Toshiba
 David Yeh
SRC/TI
Dae-Hong Ko
Yonsei U.
 Hiroaki Yoda
Toshiba
Hiroshi Kotaki
Sharp
 In-K Yoo
SAIT
Mark Kryder
INSIC
 Victor Zhirnov
SRC
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2 ERD
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Evolution of Extended CMOS
Elements
Existing technologies
New technologies
Beyond CMOS
year
3 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
Changed Scope of Emerging Research
Devices Chapter
♦ New More-than-Moore Section added – Focused on RF
♦ Emerging Research Memory Devices section broadened
in 2011 to include:
 New “Storage Class Memory” Subsection
 New “Memory Select Device” Subsection
♦ Emerging Research Logic changed
 Transitioned n-InGaAs & p-Ge alternate channel
MOSFETs to PIDS & FEP.
 Synchronized better with the Nanoelectronics
Research Initiative (NRI)
♦ Expanded technology Benchmarking section
♦ Expanded Architecture Section
4 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2011 ERD Chapter
Assessing Emerging Research
--
 Memory Devices
 Logic Devices
 More-than-Moore Devices
 Architectures
Benchmarking Emerging Devices
5 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2009 Memory Technology Entries
Emerging Memory Technologies
Spin Transfer Torque MRAM
Nanoelectromechanical RAM
Nanowire PCM
Macromolecular (Polymer)
Electronic Effects Memory
Nanoionic Memory
−Electrochemical memory
−Valence change memory
− Fuse/Antifuse (Thermochemical
memory)
Molecular Memory
 Ferroelectric Gate Memory
− Charge trapping
− Metal-Insulator Transition
(Mott Device)
6 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2011 Memory Technology Entries
Emerging Memory Technologies
Spin Transfer Torque MRAM
Nanoelectromechanical RAM
Nanowire PCM
Macromolecular (Polymer)
Electronic Effects Memory
− Charge trapping
− Metal-Insulator Transition
(Mott Device)
7 ERD
Redox Resistive Memory
−Electrochemical memory
−Valence change memory
− Fuse/Antifuse (Thermochemical
memory)
Molecular Memory
 Ferroelectric Effects Memory
– Fe (gate)FET Memory
– Ferroelectric Barrier Memory
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
ERD/ERM Memory Technology
Assessment Workshop
ITRS ERD/ERM identified two emerging memory
technologies for accelerated research & development:
1) STT-MRAM and 2) Redox Resistive RAM
STT-Memory Cell
8 ERD
Redox Memory Cell
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
One Diode – One Resistor (1D1R) Memory Cell
Memory
Device
Select
Device
Select Device
H-S. P. Wong – Stanford U.
9 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
10 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2011 ERD Chapter
 Emerging Memory Devices
 Emerging Logic Devices
 More-than-Moore Devices
 Benchmarking and Assessing
Emerging Devices
 Emerging Architectures
11 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2009 Logic Technology Tables
Table 12a – Extending
MOSFETs to the End
of the Roadmap
_______
CNT FETs
Graphene nanoribbon FETs
III-V n&p-Channel
MOSFETs
Ge p&n-Channel MOSFETs
Nanowire FETs
Non-conventional
Geometry Devices
12 ERD
Table 12b- Unconventional
FETS, Charge-based
“Beyond CMOS” Devices
_____________
Table 12c - Non-FET, Non
Charge-based “Beyond
CMOS” Devices
_______________
Spin FET& Spin MOSFET Moving domain wall devices
Pseudo-spintronic Devices
Negative Cg MOSFET
Nanomagnetic Logic(M:QCA)
Atomic Switch
Molecular Switch
NEMS switch
BiSFET
Tunnel FET
I-MOS
SET
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2011 Logic Technology Tables
Table 12a – Extending
MOSFETs to the End
of the Roadmap
_______
CNT FETs
Graphene nanoribbon FETs
III-V n-Channel MOSFETs
Ge p-Channel MOSFETs
III-V p-Channel MOSFETs
Ge n-Channel MOSFETs
Nanowire FETs
Tunnel FET
Non-conventional
Geometry Devices
13 ERD
Table 12b- Unconventional
FETS, Charge-based
“Beyond CMOS” Devices
_____________
Table 12c - Non-FET, Non
Charge-based ‘“Beyond
CMOS” Devices
_______________
Spin Torque Majority Gate
Spin FET& Spin MOSFET
Spin Wave Devices
Negative Cg MOSFET
Moving domain wall devices
Atomic Switch
Pseudo-spintronic Devices
NEMS switch
Nanomagnetic Logic(M:QCA)
Mott FET
All Spin Logic
Tunnel FET
Molecular Switch
I-MOS
Excitonic FET
SET
BiSFET
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
ERD/ERM Logic Technology Recommended Focus:
Carbon-based Nanoelectronics – Carbon Nanotubes and Graphene
Conventional Devices
FET
Band gap engineered
Graphene nanoribbons
Graphene quantum dot
(Manchester group)
Nonconventional Devices
Graphene Veselago lense
Cheianov et al. Science (07)
Graphene Spintronics
Graphene pseudospintronics
Son et al. Nature (07)
Trauzettel et al. Nature Phys. (07)
P. Kim – Columbia U.
14 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2011 ERD Chapter
 Emerging Memory Devices
 Emerging Logic Devices
 More-than-Moore Devices
 Benchmarking and Assessing
Emerging Devices
 Emerging Architectures
15 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
Wireless underlying architecture / functions
rf wave
Higher level function
011001010…
control
LNA
ADC
Intermediate level
function
nanoradio
LO
PA
filter
Lower level functions
DAC
oscillator
mixer
LO
spin-torque oscillator
NEMS nanoresonator
16 ERD
graphene
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
16
2011 ERD Chapter
 Emerging Memory Devices
 Emerging Logic Devices
 More-than-Moore Devices
 Benchmarking and Assessing
Emerging Devices
 Emerging Architectures
17 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
Benchmarking
NRI Median Switch Characteristics
1.00E+02
1.00E+01
ENERGY
INV
1.00E+00
N AN D2
DELAY
DELAY
ENERGY
AREA
AD D 32
AREA
1.00E-01
1.00E-02
All 3 metrics responding consistently – energy and area superiority.
Little change in the energy delay product.
18 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
2011 ERD Chapter
 Emerging Memory Devices
 Emerging Logic Devices
 More-than-Moore Devices
 Benchmarking and Assessing
Emerging Devices
 Emerging Architectures
19 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
Emerging Architectures

Emerging Memory Architectures in Conventional
Computing
–
–
–
–
Wireless Computing
Application Specific Computing
Multicore Computing
Research Database Computing in the Cloud
Evolved Architectures Exploiting Emerging
Research Memory Devices
 Morphic Architectures

– Neuromorphic Architectures
– Cellular-automata Architectures
– Taxonomy of Computational Ability of Architectures
20 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011
ERD – Key Messages
♦ New More-than-Moore Section added – Focused on RF devices
♦ Emerging Research Memory Devices section broadened in 2011
to include:
 New “Storage Class Memory” Subsection
 New Memory “Select Device” Subsection
 Transitioned STT-MRAM to PIDS & FEP
 Introduced new memory device category – Redox RAM
♦ Emerging Research Logic changes:
 Transitioned n-InGaAs & p-Ge alternate channel MOSFETs
to PIDS & FEP.
 Synchronized more closely with the Nanoelectronics
Research Initiative (NRI)
♦ Expanded technology benchmarking section
♦ Expanded Architecture Section
21 ERD
2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011