Transcript 70x100 cm vertical poster template

Atomically Thin PN Junction
Xiang Yuan, Faxian Xiu*
Department of Physics and State Key Laboratory of Surface Physics
Fudan University, Shanghai, 200433, China
Introduction
Results
2D Material
PN Junction
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 Direct band gap at visible light range
 Flexible and transparent
 Basic device in electrical system
 Made into LED & Solar cell
 Gate tunability
 Bulk Material
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
Promising for novel photo-electric device
Traditional photo-electrical Device
Schematic diagram and Microscopic Picture of the device
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@1.9K
@300K
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Can we still take advantage of 2D material?
How would device respond to light?
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Back Gate Voltage
from -40V to 40V
Id (A)
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Id (A)
PN junction made of 2D material heterostructure!
How will PN junction behave while reaching atomic limit?
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Vd (V)
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Vd (V)
Rectifying VI curve and Gate Tunability
Method
Fabrication
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Id (A)
Id(A)
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Vd=10V, Vg=40V
Electrical
Behavior
Photo
Response
Methods
• Light VI Test
• Photo current Mapping
Reference
1.Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A.
Nature nanotechnology 2011, 6, (3), 147-150.
2.Zhang, W.; Chuu, C.-P.; Huang, J.-K.; Chen, C.-H.; Tsai, M.-L.;
Chang, Y.-H.; Liang, C.-T.; Chen, Y.-Z.; Chueh, Y.-L.; He, J.-H.
Scientific reports 2014, 4.
We gratefully acknowledge financial support from department.
*To whom correspondence should be addressed: [email protected]
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532Laser
White LED
Dark
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• VI Test
• Gate tunable Test
• Temperature Dependence Test
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• Manually Exfoliating or Growth
• Micro Alignment
• EBL and E-beam Evaporation
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Vd (V)
T(K)
Temperature Dependence and Light Response
Ideal Diode Equation I  I S (e
eV
KT
 1)
Gate tunability is due to the screen effect and temperature
dependence can be explained by the ideal diode equation but the
saturation under 10K remains unknown. Light to dark ratio under
illumination of 532nm laser was 138. Photocurent mapping
confirmed that the photocurrent came from the junction area.
Conclusions
Heterostructures of two dimensional material showed great
potential in electronics and optoelectronics. Here we report a van
der Waal (vdW) p-n junction built from single-layer MoS2 and GaTe
building blocks. Across the junction, gate tuneable diode-like
current rectification has been observed. This structure also showed
large light response. High light to dark ratio tells that this kind of pn
junction can be used to make many important device such as light
emitting diodes, solar cells and light sensors.
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