Transcript slide temp. - STS Ltd., Home Page

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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
Next Generation Epoxy Resists for
High Performance Applications
Temporary resist: alkaline or
solvent developable
‘XP KMPR-1000’
KAYAKU MicroChem. Co., Ltd.
MicroChem. Corp.
NIPPON KAYAKU Co., Ltd.
Copyright(c) NIPPON KAYAKU Co., Ltd.
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
Temporary resist: alkaline developable
Target Requirements
Film Thickness: >50 um
Aspect Ratio: >5:1
Alkaline Developable
Plating Resistant
Etch Resistant
Easy to Remove
Excellent Adhesion
Crack - Free
Strategy
Synthesis of epoxy resin
- Alkaline soluble
- Low stress
- Low shrinkage
- Adhesion
Formulation
- Monomer / PAG / Additives
Crosslink Part
Alkaline soluble Part
Copyright(c) NIPPON KAYAKU Co., Ltd.
XP KMPR-1000
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Cross Section of Lithographic Pattern (FT=60um)
10um
20um
30um
L/S=1/1
L/S=1/3
Conditions
Copyright(c) NIPPON KAYAKU Co., Ltd.
-
Substrate : Si wafer
Soft bake : 15min @ 95degC
Exposure : 1000mJ (Ushio I-line) PEB
: 6min @ 95degC
Develop
: 2.38%TMAH @ 25degC / Immersion
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Cross Section of Lithographic Pattern (FT over100um)
KMPR 1050 on silicon: 100um thickness
A.R. =8
Process Parameters:
KMPR 1050 on Cu: 130um thickness
A.R. = 9
Spin speed: 800 rpm
Soft Bake:
20’/100 C
Exposure:
180”/ Vacuum Contact
PEB:
3’/100 C
Develop:
3’50” in TMAH
SEMS and data courtesy of IBM Research, Zurich, Switzerland
Copyright(c) NIPPON KAYAKU Co., Ltd.
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
ASML
Resolution
N.A.
Alignment
Depth of focus
Lithography by I line Stepper
700mJ
750mJ
Line
Trench
: <0.35um
: 0.63
: 70nm
: 500nm
850mJ
-
-
-
PDF File
Copyright(c) NIPPON KAYAKU Co., Ltd.
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Thick Plating Compatibility
Acid Condition
- Electro Ni
- Electro Cu
- Electro Au
- Electro Solder
- Electro less Au
Alkaline Condition
- Electro less Cu & Au
Copyright(c) NIPPON KAYAKU Co., Ltd.
Proven
Proven
Proven
Proven
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Strippability
Strip Mechanism
Stripper
: swell and lift
Temp.
(deg C)
Time
(min.)
Remover PG
70
30
Removal
Removal
Removal
SU-8 Remover N01
93
60
Removal
Removal
Removal
DMSO / NMP
R.T.
30
Removal
-
-
Alkaline aq. soln.
R.T.
30
NG
NG
NG
Before Strip
Copyright(c) NIPPON KAYAKU Co., Ltd.
Hard Bake (min@degC)
None
5@100
5@150
Incomplete Removal
Complete Removal
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Cross section of Ni plated structures (FT=35um)
10um
20um
30um
L/S=1/1
L/S=3/1
Plating
Solution
: Ni sulfamate
Current Density : 2.5 A/dm2
Time&Temp.
: 60min@55 degC
Copyright(c) NIPPON KAYAKU Co., Ltd.
-
Stripping
Stripper
Time&Temp.
: Remover PG
: 30min @70degC
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Cross section of Ni plated structures (2)
Square Post (FT=50um)
Size/Space=25/12
Size/Space=25/25
Size/Space=50/50
Square Hole (FT=50um)
Size/Space=25/12
Size/Space=25/25
Plating
Solution
: Ni sulfamate
Current Density : 2.5 A/dm2
Time&Temp.
: 60min@55 degC
Stripping
Stripper : Remover PG
Time&Temp. : 30min @ 70degC
Copyright(c) NIPPON KAYAKU Co., Ltd.
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Cross section of Cu & solder plated structures
Cu Elliptic Post (FT=50um)
Solder Square Post (FT=75um)
Plating
Solution
: Solder plating soln.
Current Density : 3.0 mA/dm2
Time&Temp.
: 50min@ 25degC
Stripping
Stripper : Remover PG
Time&Temp. : 30min @ 70degC
Stripping
Plating
Solution
: Cu sulfate soln. Stripper : Remover PG
Time&Temp. : 30min @ 70degC
Current Density : 2.5 A/dm2
Time&Temp.
: 90min@ 25degC
Copyright(c) NIPPON KAYAKU Co., Ltd.
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
Current issues with KMPR 1000
• Complete removal in wet resist strippers, such as NMP & DMSO not achievable
• Viscosity stability limited to 120 days at room temperature
50 um KMPR with Nickel metal plated up on a
nickel seed layer.
The resist structures in this image are 25 um posts.
You can see the the KMPR surrounding the
structures was easily removed in NMP.
However, you can also see the KMPR stuck in
between the high aspect ratio features. This is
typical of what we have seen with all wet stripping
of KMPR
Copyright(c) NIPPON KAYAKU Co., Ltd.
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
Ball-Grid Array (BGA) of Copper Metal
Plated on Copper Seed Layer
using 20 um KMPR
Removed by Dry, Plasma Ash
(100 W, 95/5 sccm O2/SF6 180 mTorr, 60 minutes)
Photoresist
Etch Rate (Å/min)
Shipley 1813
3000
SU-8
2400
KMPR
2700
200W, 10 sccm O2, 40 mTorr, 10 minutes
Copyright(c) NIPPON KAYAKU Co., Ltd.
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Etch Compatibility
Wet etch
- Glass etching (HF)
Before
Dry etch
- Si etching (Deep RIE)
10min@rt
(5%HF aq)
- Al etching (acid)
Resist Pattern
Copyright(c) NIPPON KAYAKU Co., Ltd.
Al Pattern
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Crack-free structures with good adhesion
KMPR
Line
Pattern
SU-8
Poor adhesion
Surface Cracks
Hole
Pattern
Sample
Preparation
Copyright(c) NIPPON KAYAKU Co., Ltd.
Substrate : Si wafer
Soft bake : 15min @ 95degC
Exposure : Ushio(I-line)
PEB
: 6min @ 95degC
Develop
: SU-8 Developer @ 25degC / Immersion
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
Temporary resist: solvent developable
Need:
to prevent etching of sensitive materials
Substrate
Electro Line
Al
Ceramic
-
Platform is the same as alkaline developable resist
SU-8 Developer (PGMEA based)
Equivalent performance: aqueous & SU-8 developers
Copyright(c) NIPPON KAYAKU Co., Ltd.
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FUNCTIONAL CHEMICALS RESEARCH LABORATORIES
XP KMPR-1000
Summary
XP KMPR-1000 is a temporary resist based on a new epoxy resin platform
Film Thickness: >50 um
Aspect Ratio: >5:1
Alkaline or solvent developable
Plating Resistant
Etching Resistant
Applications
Easy to remove
• MEMS
Excellent adhesion
Sensor, Actuator,
Crack-free
Robot
• IC packaging
Bump plating
• Etch Mask
Wet, Dry
Copyright(c) NIPPON KAYAKU Co., Ltd.