Transcript IEE5011 –Autumn 2013 Memory Systems Solid State Drives

IEE5011 –Autumn 2013
Memory Systems
Solid State Drives with Storage
Class Memories
Denni Kurniawan (0260813)
Department of Electrical Engineering and Computer Science
National Chiao Tung University
Outline
Introduction
Solid-State Drive
NAND Flash Memory
SSD Architecture
NAND Flash Trend
Storage Class Memory
Conclusion
Reference
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Introduction
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Introduction
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Introduction
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Solid-State Drive
 A Solid-state drive (SSD) is a storage device
using to store data persistently.
 SSD does not contain moving mechanical disk
as in hard-disk drive (HDD).
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Solid-State Drive
SSD Advantages
 No spin-up time
 Fast, random-access to data
 Use less power consumption
 Far more robust
 Silent
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Solid-State Drive
SSD Disadvantages
 High storage cost per gigabyte
 Lower drive capacities
 Relatively low write speed
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NAND Flash Memory
Source: Campordo et al. 2005
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NAND Flash Memory
Read mode flash memory architecture
Source: Campordo et al. 2005
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NAND Flash Memory
Write mode flash memory architecture
Source: Campordo et al. 2005
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NAND Flash Memory
Erase mode flash memory architecture
Source: Campordo et al. 2005
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SSD Architecture
A memory controller task:
 To provide the most suitable interface
and protocol towards the host and flash
memories.
 To efficiently handle data, maximizing
transfer speed, data integrity and
information retention.
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Source: Takeuchi, 2009
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SSD Architecture
 FTL is used to map logical blocks to their
locations within physical flash memory.
 An FTL allows file systems and SSD to
maintain the block interface of disks and
control over how the flash is managed.
 Two types of FTL a log-based approach
and mapping consecutive ranges.
 Wear leveling techniques rely on the
concept of logical to physical
translation.
 Bad Block Management module creates
and maintains a map of bad blocks.
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Source: Takeuchi, 2009
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NAND Flash Trend
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Source: Wei Hwang, NCTU
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NAND Flash Trend
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Source: Wei Hwang, NCTU
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NAND Flash Trend
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NAND Flash Trend
IEEE International solid-state circuit conference
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NAND Flash Trend
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Source: Wei Hwang, NCTU
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NAND Flash Trend
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Source: Wei Hwang, NCTU
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Storage Class Memory
Source: Takeuchi, 2008
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Storage Class Memory
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Source: Wei Hwang, NCTU
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Storage Class Memory
Source: IBM
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Storage Class Memory
Papers presented at
Symposium on VLSI Technology
IEDM (Int. Electron Devices Meeting)
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Storage Class Memory
Memory capacity vs. cycle time
Source: Everspin technologies
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Storage Class Memory
Memory Endurance vs. cycle time
Source: Everspin technologies
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Storage Class Memory
Read vs. Write Bandwidth
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Source: Wei Hwang, NCTU
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Conclusion
• SSD based NAND flash technology successfully replace
HDD as storage device.
• SCM is a new class that reduce boundaries between
storage/memory technology.
• The features of SCM technologies should be: nonvolatile, short access times (~DRAM like), low cost per bit
(more DISK like), and solid state
• The goal of SCM development is to create compact,
robust storage and memory systems with greatly
improved cost/performance ratios relative to other
technologies.
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Conclusion
 There are many technologies that claim the best for SCM
application such as PCRAM, RRAM, FeRAM, and MRAM,
but all of them are still in the competition.
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References
1.
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References
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