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Jobin-Yvon Horiba
Dr Yong Ji
Application Engineer - Thin Film Group
[email protected]
www.
.com
HORIBAGROUP -
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FLUORESCENCE • FORENSICS • SPECTROSCOPY SYSTEMS
www.jyinc.com
or www.jyhoriba.com
•
RAMAN
•
EMISSION •
O E M &GRATINGS
•
THIN FILMS
Location
JY-Horiba in the world
U.S.A.
Europe
JAPAN
Oct. 2002, JY acquired
Philips Ellipsometer line
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Introduction
I - Basic Principle of Ellipsometry and
Reflectometry
II -Application of SE(PME) and
LE/Reflectometry on SiGe and SOI
III - What we can provide, UVSEL, PZ,
PQ…. , the way we support you….
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I - BASIC PRINCIPLE OF
ELLIPSOMETRY AND
REFLECTOMETRY
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1 - Reflectometry principle
= measurement of the changes in the light intensity by
reflection on a surface vs wavelength
Ei
r()=Er()/Ei()
R()=r().r*()
Er
n0
Et
n1
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2 - Ellipsometry principle
= measurement of the changes in the light polarization by
reflection on a surface
i
Ep
rs 
r
Es
Esi
Esr
r
Ep
rp 
i
Es
E rp
E ip

n0
n1
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rp
rs
 tan e
j
2 - Ellipsometry
BASIC ELLIPSOMETRY
EQUATION principle
rp
j
   tan e
rs
-  and 
- tan 
-
Ellipsometric angles - measured data
rp
rs
  p   s
Ratio amplitude
Phase difference introduced by reflection from sample
- Angle definition range
  0,90 
and
  0,360
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2 - Ellipsometry principle
ELLIPSOMETRY ADVANTAGES
• Measures ratio of two values
- highly accurate & reproducible
- no reference necessary
• Measures a « phase » 
- very sensitive, especially to ultrathin films (< 10 nm)
• Laser Ellipsometry (LE)
- measures two unknowns at the laser wavelength (I.e. d and n, d
and k, or n and k)
• Spectroscopic Ellipsometry (SE)
- increased sensitivity to multiple film parameters
- eliminates period problem for thick films
- measures data at wavelength of interest
 A NON DESTRUCTIVE TECHNIQUE
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3 - Ellipsometry Type
Null Ellipsometer Configuration
• Adjust optical elements to extinguish beam at detector
 slow (usually manual) and difficult to make spectroscopic
 accurate, low systematic error
Rotating Polarizer Ellipsometer Configuration
 can be highly accurate, easy to construct
 less sensitive to  when near 0 or 180 (tg / cos )
 can cause beam deviation
Phase Modulated Ellipsometer Configuration
 highly accurate : excellent  precision over the whole range
 fast measurement : very well adapted for in-situ control
 signal : very accurate and stable
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4
Ellipsometry
Comparison
ELLIPSOMETRY ADVANTAGES
PEM
Modulation
Measured
Variables &
Precision
Measurement
Speed
Wavelength
(Energy)
Range
Accuracy on
thickness
Measurable
Thickness
Rotating
Polarizer
(Analyzer)
No Mechanical Mechanical
Movement
Rotation
LE+
Reflectometer
sin2 or
COS2 - tg 
excellent on
both  - 
fast
Laser
Reflectometer
Ellipsometer
(LE)
Mechanical No
Rotation
Mechanical
Movement
tg  - cos  tg  - cos  Reflectivity
excellent on excellent on
 - poor on  - good on


slow
fast
medium
tg  - cos 
excellent on 
- good on 
UV-VIS-IR
UV-VIS-IR
Laser
Wavelength
UV-VIS-IR
UV-VIS-IR
Excellent
good
Good
Poor
Good
~0A-20um
~0A-20um
~0A-10um
500A-30um
~0A-50um
Mechanical
Rotation
medium
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What can LE/Reflectometry do ?
Dimensional properties :
•
•
•
•
Interface thickness
Layer thickness
Native thickness
Uniformity
Optical properties :



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Refractive indices
Absorption coefficients
Dielectric constants
7- Information from PME
Optical properties
Dimensional properties
 Interface thickness
 Layer thickness
 Native thickness
 Roughness


Refractive index
Extinction coefficients
Material properties
Composition
 Microstructure
 Doping level
 Homogeneity

layer
Substrate
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8 - PME presentation
 Schematic diagram of the spectroscopic Phase
Modulated Ellipsometer
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- What is the PEM ?
• Application of a sinusoidal vibration through piezo on the PEM
• Periodical birefringence into quartz bar
• Modulation phase shift
Linearly
polarized light
Quartz Bar
Oscillator
50 kHz
Piezo electric
transducer
Elliptically
modulated
polarized light
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- Advantages of PME vs. Rotating Element SE?
• No moving part----> no light path wobbling----> high accuracy
•
 long lasting---> low maintenance cost
• 50KHz Modulation >> 20Hz rotation of RE ----> PME faster
• Measuring Is=Sin(2)Sin() Ic= Sin(2) Cos() or In=Cos(2
) instead of Cos() and Tan()---> no ambiguity of  sign ---> reliable
•
 high accuracy on  when  = 0 or 180 (thin layer) ---->
high accuracy for all applications
• Polarizer and Analyzer are fixed ---> no dependency on light
source and detector ---> high accuracy for today and tomorrow
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 Sensitivity of Phase Modulated SE
Glass substrate and Oxide layer refractive indices
1,65
1,6
Bulk oxide layer
n
1,55
Interface layer
1,5
Glass substrate
1,45
1,4
1,5
2,5
3,5
4,5
E (eV)
3855 A SiO2
Glass substrate
Impossible to detect using
Rotating Polarizer
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 Precision of the system
NIST 10nm
110
Thickness (A)
108
UVISEL measurement
106
NIST mean value
104
NIST min value
102
NIST max value
100
98
0
5
10
Measurement numbers
NIST traceable Standard reference Materials
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II -Application of SE(PME)
and LE/Refletometry
on SiGe and SOI
1. SE(PME) application
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1 - SiGe application
SixGe(1-x)
Goal : Measurement of thickness
and composition x
c-Si
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1 - SiGe application
Native Oxide
Measured Data & Simulated Data
30 Å
830 Å
Si(1-x)Gex (x=0.15)
Si Substrate
Ellipsometric Model
0.25
+++ Measured data
Simulated data
Composition (Si(1-x)Gex))
0.20
0.15
←Ave 14.9% for Ge
Our unique method (Patent pending)
allows to evaluate Ge concentration
within 1 atomic % precision.
0.10
0.05
SIMS Data
0.00
0
200
400
600
800
1000
DEPTH (Angstroms)
1200
1400
Sorry! We can not open data of SiGeC now.
SiGeC: 300-1500A, Ge=5-25%, C < 2.0%
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1 - SiGe application
Native Oxide
Si
Si Substrate
Ellipsometric Model
1. SiGe thickness
Ave
: 27.2nm
3 Sigma: 0.33nm
2. Ge %
Ave
Tihikness and Ge (%)
Si(1-x)Gex (x=0.05)
Repeatability
300.000
250.000
200.000
150.000
100.000
50.000
0.000
SiGe (A)
Si Cap (A)
Ge (%)
1 2 3 4 5 6 7 8 9 10
Times
: 5.787 atomic %,
3 Sigma: 0.234%
It is possible to measure low level of Ge concentration.
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1 - SiGe Application-Mapping Capability
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1 - SiGe application-Graded
Native Oxide
Cap Layer
c-Si
c-Si
20 Å
100~400 Å
100~400 Å
Graded Layer
Si(1-x)Gex
Spacer Layer
Si(1-x)Gex (x=0.05~0.25)
100~400 Å
Si Substrate
Measured Data & Simulated Data
Ellipsometric Model
Good accuracy measurement of
wide range thickness and Ge
concentration of HBT structures
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1 - SiGe application:P-SiGe
Native Oxide
Poly-Si(1-x)Gex
SiO2
20 Å
2000 Å
1000 Å
Measured Data & Simulated Data
Si Substrate
Ellipsometric Model
Ge concentration (atom %)
Ellipsometer
Surface Auger
15.2
14.5
22.6
22.8
n (SiGe)  Ge %
n (poly-SiGe)  Ge %, Crystalinity
No references for poly-SiGe exist
No need for poly-SiGe references if using
our Approximation Technique!
(Patent pending)
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1 - SOI application
High Accuracy Automatic Measurement of Wide Thickness Range SOI structures
Native Oxide
c-Si
SiO2
20 Å
100~10000 Å
300~5000 Å
Si Substrate
SOI structure
Accuracy Example for BOX
(*)
Real Value
Measured Value
Thickness (A)
SiO2
Si
1001.7
998.3
977.9
(*) Measured after Si layer etching
Using Special technique can achieve high
accuracy measurement for thin Buried Oxide
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II -Application of SE(PME)
and LE/Refletometry
on SiGe and SOI
2. LE/Reflectometry application
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TFT Applications1 - SOI Application
Model for low dose implantation
C-Si
SiO2
C-Si substrate
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1 - SOI Application: reflectivity spectrum of SOI wafer
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TFT Applications1 - SOI Application
Measurement result
C-Si
2243.86  0.82A
SiO2
1807.12  2.64A
C-Si substrate
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1 - SOI Application: SiO2 uniformity mapping
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1 - SOI Application: Si uniformity mapping
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1 - SOI Application: reflectivity spectrum for high does implantation
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TFT Applications1 - SOI Application
Measurement result
for high dose
implantation
C-Si
1896.99  0.77A
SiO2
3617.51  3.31A
C-Si substrate
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1 - SOI Application
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TFT Applications1 - SOI Application
Measurement result
Si:43.33% , SiO2 :56.67%
C-Si
1892.83  0.81A
SiO2
3419.44  4.69A
C-Si+SiO2
C-Si Substrate
3 Layer Model
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289.19  3.49A
III - What we can provide,
UVSEL, PZ, PQ…. , the way
we support you….
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1 - UVSEL Bench top
CCD Camera
Auto collimation
system
Automatic
goniometer
Detection head
Excitation
head
XY stage
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2 - UVSEL Rack
 A full package to save space
• 15 inches flat screen display
• Integration into the rack : multiwavelengths, controller, PC, automatic
sample stage electronic, goniometer
• Dimension (mm) :
- Height : 1532
- Width : 1032
- Depth : 832
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3 - UT300 Fully Automation
• For ultra thin film from 10 Å to several
microns
• For single or complex multiple layer
stack
measurements
• Fully automated system
• Provides highly accurate measurements
of material and thin film optical and
structural properties
• Allows a high throughput > 130 wafers/h
• Available for 6 ’’, 8 ’’ or 12 ’’ sample size
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4-UVSEL- in-situ
•Thickness monitoring
•Growth and etch rate
•Endpoint detection
•Alloys composition,Crystallinity,
Surface damage,
Contamination, Surface
temperature
•Plasma deposition, Plasma
etching,Thermal oxidation,
CVD, sputtering, MBE,
MOVPE,Surface cleaning,
Implantation,Corrosion,
Electrochemistry
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5-PZ 2000
Transparent films such
as
oxides,
nitrides, DL carbon
and ARC. Absorbing
films - such as poly
and
a-silicon,
polyimide.
Multilayers - such
as SOI, ONO, OPO
or CMP films.
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PQ Ruby
PQ Ruby LE:Laser Ellipsometry
PQ Ruby R:Reflectometry
PQ Ruby LE/R:combines Laser
Ellipsometry and Reflectometry
into one tool
Ultra-thin gate oxides: unique
accuracy
due
to
Laser
Ellipsometry
193 nm ARC & resist: new
applications due to a built-in
reflectometer (from 186 nm 950 nm)
SOI & poly-Si on oxide: unique
infra-red option for measuring
(poly-) Si on oxide
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APPLICATION LABORATORY
The way we support you
Application support :
- Dr Yong Ji: [email protected]
- Dr Eric TEBOUL: [email protected]
- Rainer Hoffmueller: [email protected]
- Alan Kramer: [email protected]
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1 - JY ’s Application laboratory expertise
1 - Industrial R&D in III-V, semiconductor, optic, flat panel display
 Examples
* c-Si/SiO2/Cobalt
* c-Si/SiO2/Resin
* glass/a-SiH
* c-Si/metal oxide/p-SiGe
2 - Fundamental research in surface science
 Examples
* polycarbonate/chalcogenide glass
* c-Si/SiO2/Langmuir Blodgett
* H2O/dodecanol
3 - Industrial applications : quality control, III-V, flat panel display
 Examples
* c-Si/SiO2/Si3N4
* c-Si/SiO2/poly-Si/SiO2
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* c-Si/TiO
* c-Si/Al2O3
2 - JY ’s thin film characterization
 Typical materials
•
•
•
•
•
Semiconductor : silicon, III-V, II-VI, alloys …
Metal : Al, Cr, Ti, TiN, Co
Insulator : oxide, nitride, fluoride, carbon based
Polymer : polyethylene, polycarbonate, nylon, color dye
Liquid : water, oil
 Multi-layers
 Gradients
 Anisotropic layers
 Effective Medium Analysis
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In Situ Sensors
Laser and white light
Interferometry
Ellipsometry
Wafer visualization
Pattern recognition
Wafer
Langmuir
Probe
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Optical
Emission
Spectroscopy