Transcript Slide 1

Ion implanter – HV terminal 500 kV
a number of Nielsen and RF ion sources
for gaseous and solid materials
mass analysis better than 1 a.m.u.
beam current from 1-100 mA, beam scanning system
target area up to 5 cm diameter
2MV Van de Graaff ion accelerator
RF source for light ions - H, He and their isotopes
RBS – beam line in preparation
UHV chamber for thin film deposition
e-beam or thermal evaporation
Thin film coating unit
for SEM sample
preparation
Dual ion miller for TEM
specimen preparation
TEM – Philips EM400
120 keV
TEM – Philips EM400T
120 keV
SEM – Philips EM500
Oxford Instruments EDAX
SEM – JEOL 25N with EPMA (e-microprobe)
ANA
HV thin film deposition unit
with dual ion beams
EMA 10 – UHV system
Surface analysis - LEIS i SIMS
(low energy ion
scattering and
Secondary ion
mass spectroscopy)
Balzers SPUTTRON II thin film
deposition system
d.c. and r.f. sputtering, four target
elements, raective deposition
Balzers BAK 550 evaporation system
e-beam (four teagles) or thermal evaporation, thickness and deposition rate monitor,
programmable four layer deposition, reactive evaporation, residual gas analyzer, flash
evaporation
Talistep – thin film thickness and surface
roughness measurements