Transcript Document

New generation of ion sources based on nonconducting solid-state matters for semiconductor
industry
Ady Hershcovitch
Plasma Sources LTD
Research and Practical Conference “Accelerators and Radiation technologies for the Futures of Russia”
г.Санк-Петербург
28-29 September 2012, Saint-Petersburg
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Описание решения и технологии
Technology description: Since the invention of the transistor, the trend has been to miniaturize
semiconductor devices. As devices get smaller, shallower ion implantation for semiconductor
manufacturing is needed. Consequently, lower energy ion beams are needed. However, spacecharge (repulsion among ions) limits low energy ion beam intensity (current). Low intensity ion
beams result in low production rates. Some solutions require the use of ovens, which also slow
production. Objective of our endeavor is to increase production rates with molecular ions and
eliminate oven use where possible.
• What is new: Implant molecular ion beams to mitigate the space charge problems instead of
neutralizing plasmas, utilized in today’s implanters, which often result in implanting undesirable
impurities. To overcome detrimental residue left by boron molecules or oven use needed to
generate phosphorous molecules, self-cleaning boron compound is used to mitigate the first
problem and dissociator to solve the later (details in the next slides).
Current status of work and its perspective: Breakthrough achieved in two technologies: residue
free carborane and gaseous molecular phosphorous ion beams have been generated. Both being
tested on production tool; next milestones: larger carborane fraction for the first, smaller
dissociator for the later (details below). Final result commercialization!
• Potential for collaboration with some company world-leader at the field of project to incorporate
in world market: In very close contact with Varian Semiconductor Equipment | Silicon Systems
Group | Applied Materials, evaluating our products on their tools
Research and Practical Conference “Accelerators and Radiation technologies for the Futures of Russia”
г.Санк-Петербург
28-29 September 2012, Saint-Petersburg
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Описание решения и технологии
• In manufacturing semiconductor devices, substrates are implanted with dopants. Generally, the
semiconductor substrate is made from a single crystal silicon wafer and dopants are atoms and/or
molecules that determine the properties of the semiconductor once implanted in the substrate. The
most basic building blocks of any semiconductors device are n-type and p-type semiconductors.
Boron is used to make the p-type semiconductors and phosphorous is the most widely used element
to make the n-types semiconductors. After p-n junctions are made, more complex semiconductors
require implantation of other species O2, N2, Ar, As, Sb, Ga, and Ge. Therefore, fast rate implantation
of B&P and the ability to quickly switch among species is of paramount importance. In current
technology, most semiconductor manufacturers prefer to generate single atom B&P ions fed from
gaseous sources, since molecular boron leaves residue and molecular phosphorous ions require
ovens, which need 10’s minutes to warm up and stabilized. Carborane (C2B10H12), whose discharges
leave graphite residue (deposited on grids leaving unacceptable “shadow” on wafers), is the most
stable boron molecule.
• Accomplishment: a compound has been synthesized and utilized in Bernas ion source discharges
operating to generate and extract carborane ion beams that either leave no residue or have selfcleaning properties: m-Carborane-1.7-dicarboxylic acid [1.7-(HOOC)2-m-C2B10H10] is that compound
(instead of injecting large amounts of fluorine or oxygen, which load up the ion source and greatly
reduce extracted ion beam).
• Accomplishment Gaseous P4 : a key development was flowing phosphine gas PH3 through a
dissociator (comprising of a metal coil heated up to approximately 500º C) for the following reaction
to occur 4PH3 (gas)  P4 (gas) + 6H2 (gas); i.e. molecular phosphorous (P4) exits the dissociator in
gaseous state and is injected into an ion source for ionization and extraction.
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Описание решения и технологии
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Comparison to Varian HC tool needs:
The phosphine dissociator is too large to fit into the Varian ion source: half size dissociator is needed.
Modifying implanters to accommodate the present dissociator is not cost effective. Dissociator size
must be reduced by a factor of about 2.
Below is the spectrum we originally obtain and spectra obtained on Varian tool (red dotted overlay of
carborane spectrum). Need to improve carborane fraction by substantial factor!
Our very recent spectra
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28-29 September 2012, Saint-Petersburg
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Рынок
Segment of market which project product is oriented: although both technologies can serve new
ion implanters, a much larger market is retrofitting existing ion implanters.
Existing solution and key difference between them and developed product: due to slowness of
ovens and the need to clean ion source residue, most B&P implantation, even low energy, utilizes
single (non-molecular) ions from gaseous sources. Our technologies could facilitate molecular
B&P implantation and accelerate production rates.
Potential customers: Varian Semiconductor Equipment | Silicon Systems Group | Applied
Materials; SemEquip (now owned by Ceradyne), Axcelis, Core Systems, and Nissin
Estimation of world market $M
Market segments, of the $500,000,000 - $ 1,000,000,000 a year
semiconductor ion implantation industry, are: high, medium, and
low energy ion implanters. The low-energy segment of the ion
implanter market has been growing as the semiconductors
become smaller to eventually dominate the market. It is
important to point out that the commercial size of the
$500,000,000 - $ 1,000,000,000 a year semiconductor ion
implantation industry is based on an “average” quoted by
industry leaders as both revenue and volume of this industry are
subject to severe boom-and-bust cycles that have affected the
entire semiconductor industry in the past three decades, a
pattern that is expected to continue. Potential applications for
these technologies are two-fold: new ion implanters of high
purity ions and retrofit existing low-energy ion implanters of high
purity
ions.
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Demand on the product
A new ion implanter costs $3,000,000 to $5,000,000. With
the new technology, an annual increase of 10% implanter
sales can be expected (for Varian e.g. 40% of market), i.e.,
$16,000,000 increase in revenues (% for new technology?
TBD). Presently, there are about 5000 ion implanters in
operation at various semiconductor manufacturers
worldwide. From retrofitting 50 implanters annually with
new technologies at a cost of $300,000 per retrofit,
$15,000,000 per year in sales can be expected (Percentage
for Russian side TBD negotiations after the technologies are
proven viable for Varian). These are average numbers;
presently market is in a mini bust due to the general
worldwide economy though it’s not always the case.
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Инвестор проекта
Elion Ltd.
was established in 1997 in Tomsk, Russia. The company manufactures electron-beam
equipment used for a variety of technological and scientific purposes. The company’s own R&D is the
foundation of its products.
Customers for 2006 – 2011
- electron-beam equipment for fuel elements sealing (ОАО НЗХК, г.Новосибирск).
- electron-beam equipment for manufacturing of superconducting cables for ITER project (ОАО «ЧМЗ», г.
Глазов).
- electron-beam equipment for zirconium preparation technology (НИТИ «Прогресс», г. Ижевск, ОАО
«ЧМЗ», г. Глазов).
- electron-beam equipment for precise welding (ОАО СХК, г.Томск).
- electron-beam equipment for metallurgic industry (ОАО «Западно-Сибирский металлургический
комбинат», г. Новокузнецк and factory in Bensi, China).
Research and Practical Conference “Accelerators and Radiation technologies for the Futures of Russia”
28-29.09.2012г.
г.Санк-Петербург
28-29 September 2012, Saint-Petersburg
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Построение кооперации для реализации проекта
Very close cooperation exists at present, with Varian as discuss in previous slides. Through this
cooperation we are finding the true needs of an industry that is extremely secretive. Reason for
secrecy: each company does not want for competitors to know what they are even thinking
about. Patents are filed usually the day before a product is marketed.
Research and Practical Conference “Accelerators and Radiation technologies for the Futures of Russia”
28-29.09.2012г.
г.Санк-Петербург
28-29 September 2012, Saint-Petersburg
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Команда проекта
scientific manager of project
Full Doctor, Full Professor;
3 monograph, more than 150 articles
(h-index from Web of Science – 17)
Director “Plazma sources”
PhD;
more than 150 articles
(h-index from Web of Science – 8)
Manager of scientific and technical development
PhD;
Specialist in beam transport system
Full Doctor
more than 70 articles
(h-index from Web of Science – 14)
boron molecular beam generation
PhD
more than 40 articles
(h-index from Web of Science – 5)
boron molecules synthesis
PhD
6 patent USSR, 1patent RF.
Ion source expert
PhD
more than 50
(h-index from Web of Science – 9)
Generation of boron molecular beams
more than 30
(h-index from Web of Science – 4)
Plasma generation expert
Full Doctor
more than 30
(h-index from Web of Science – 4)
Transport system for boron molecular beams
PhD
more than 30
(h-index from Web of Science – 2)
Ion source expert
PhD
more than 40
(h-index from Web of Science – 8)
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Project expert
Dr. Ian G. Brown, Senior Physicist Lawrence Berkeley
National Laboratory, CA
Postdoctoral Fellow, Princeton University, 1966-68
Ph.D. in Physics (Plasma Physics), University of Sydney, 1966
Fellow of American Physical Society, Australian Institute of Physics, Institute
of Physics (U.K.), IEEE.
Member of AVS, MRS, Böhmische Physical Society.
Founder of Plasma Applications Group, LBNL, Biennial conference series,
International Conference on Ion Sources.
Author of 9 books, 400 refereed papers (H-index=38), 300 conference papers.
Inventor of the MEVVA (Metal Vapor Vacuum Arc) ion source and 13
patented inventions related to plasma and ion source.
Establisher research collaborations with Universities and Institutes3in Australia, Germany,
Japan, Russia, Brazil, China,, Hong Kong, Israel, Korea, Thailand, Turkey.
Awards and Research Recognition:
2005 R&D-100 Award "For Neural Matrix CCD“
2005 Winner of LBNL Technology Transfer Excellence Award
1992 R&D-100 Award "For DC Broad-Beam High-Current Metal Ion Source”
1989 Winner of LBNL Technology Transfer Excellence Award
1988 Winner of special award for Excellence in Technology Transfer
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1985
IR-100 Award for development of "high
current ion source MEVVA”
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Project manager
Dr. Ady Hershcovitch, Senior Physicist Brookhaven
National Laboratory, NY
Ph.D. in Applied Plasma Physics, Cambridge, Massachusetts,1977.
Fellow of American Physical Society.
Author of 150 refereed papers (H-index=9) and 200 conference papers.
Inventor of the Plasma Window, ion sources with polarized nuclei, new
concepts for particle beam cooling and capturing, non-vacuum electron beam
welder and 9 patented inventions related to plasma and ion source.
Awards and Research Recognition:
1996 R&D-100 Award for the Plasma Window.
1987 IR-100 Award for the development of ion-sensitive probe.
Selected Professional Activities
•Organizer for Partially Ionized Gases for ICOPS 2005 in Monterey, CA.
3 Baltimore, MD.
•Organizer for the topic of Partially Ionized Gases for ICOPS 2004 in
•Organized and co-chaired a Joint Meeting of the Seventh International Symposium on the
Production and Neutralization of Negative Ions and Beams, NY, 1995.
•Chaired the 5th Int. Symposium on the Negative Ions and Beams, NY, 1989.
•Organized and chaired the International Symposium on Electron Beam Ion Sources, NY, 1988.
•Co-chairman of the 4th Int. Symposium on the Negative Ions and Beams, NY, 1986.
•Program Committee of the 1990 APS Spring Meeting.
•Advisory Committee for the Int. Symposium on Electron Beam Ion Sources,1991, Dubna.
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•Consultant on Plasma and Particle Beamг.Санк-Петербург
Industrial Devices.
28-29 September 2012, Saint-Petersburg