High Power Converters and Applications
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Transcript High Power Converters and Applications
EE8407
Power Converter Systems
Topic 2
Graduate Course EE8407
Bin Wu
PhD, PEng
Professor
ELCE Department
Ryerson University
Contact Info
Office: ENG328
Tel:
(416) 979-5000 ext: 6484
Email:
[email protected]
http://www.ee.ryerson.ca/~bwu/
Ryerson Campus
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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EE8407
Topic 2
Topic 2
High-Power Semiconductor Devices
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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EE8407
High-Power Semiconductor Devices
Topic 2
Lecture Topics
•
•
•
•
•
•
Power Diode
SCR Thyristor
Gate Turn-Off Thyristor (GTO)
Integrated Gate Commutated Thyristor (GCT)
Insulated Gate Bipolar Transistor (IGBT)
Switch Series Operation
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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High-Power Semiconductor Devices
Topic 2
• Device Rating
V (V)
12000
12000V/1500A
(Mitsubishi)
SCR
27MVA
SCR:
GTO/GCT: 36MVA
6MVA
IGBT:
10000
6500V/600A
(Eupec)
8000
6000
7500V/1650A
(Eupec)
6000V/3000A
(ABB)
6500V/1500A
(Mitsubishi)
6500V/4200A 6000V/6000A
(Mitsubishi)
(ABB)
GTO/GCT
4800V
5000A
(Westcode)
3300V/1200A
(Eupec)
4000
4500V/900A
(Mitsubishi)
2000
2500V/1800A
(Fuji)
1700V/3600A
(Eupec)
IGBT
0
0
1000
2000
3000
4000
5000
6000 I (A)
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Power Diode
Topic 2
4500V/800A press pack and 1700V/1200A module diodes
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Power Diode
Topic 2
• Heatsink Assembly
P
Heatsink P
P
A
B
Vd
A
A
C
N
N
N
(a) Diode Rectifier
(b) Press pack
(c) Module
Press pack device:
• Double sided cooling
• Low assembly cost and high power density
• Preferred choice for high voltage high power applications
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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SCR Thyristor
Topic 2
4500V/800A and 4500V/1500A SCRs
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
SCR Thyristor
• Switching Characteristics
iG
0.1I GM
I GM
t
iT
iT
0.9 I D
ID
0.1I D
I rr
vT
VD
0.1VD
iG
t rr
vT
0.1I rr
t
Qrr
Von
t
t don tr
ton
t off
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
SCR Thyristor
• Main Specifications
12000V/1500A SCR Thyristor
Maximum
Rating
Switching
Characteristics
V DRM
12000V
Turn-on
Time
t on 14 s
V RRM
I TAVM
12000V
Turn-off
Time
t off 1200 s
VDRM – Repetitive peak off-state voltage
I TAVM – Maximum average on-state current
t I
Q rr rr rr – Reverse recovery Charge
2
1500A
diT /dt
100 A / s
VRRM
I RRMS
I TRMS
-
2360A
dvT /dt
2000V / s
Qrr
7000 C
– Repetitive peak reverse voltage
– Maximum rms on-state current
Part number – FT1500AU-240 (Mitsubishi)
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Gate Turn-Off (GTO) Thyristor
Topic 2
4500V/800A and 4500V/1500A GTOs
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Gate Turn-Off (GTO) Thyristor
Topic 2
• Symmetrical versus Asymmetrical GTOs
Type
Blocking
Voltage
Asymmetrical GTO
V RRM V DRM
Symmetrical GTO
V RRM V DRM
Example
(6000V GTOs)
VDRM 6000V
VRRM 22V
VDRM 6000V
VRRM 6500V
Applications
For use in voltage
source inverters with
anti-parallel diodes.
For use in current
source inverters.
VDRM - Maximum repetitive peak (forward) off-state voltage
VRRM - Maximum repetitive peak reverse voltage
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
Gate Turn-Off (GTO) Thyristor
• Switching Characteristics
vT , iT
iT
vT
0.9 I D
0.9VD
ID
VD
0.1VD
0.1I D
t
0
t don t r
iG
ttail
t doff
tf
diG1 / dt
iT
iG
I G1M
0
0.1I G1M
t
0.1I G 2 M
diG 2 / dt
vT
IG 2M
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
Gate Turn-Off (GTO) Thyristor
• Main Specifications
4500V/4000A Asymmetrical GTO Thyristor
Maximum
Rating
Switching
Characteristics
V DRM
4500V
Turn-on
Switching
t don 2.5 s
t r 5.0 s
On-state Voltage
I TGQM
V RRM
17V
Turn-off
Switching
t doff 25.0 s
4000A
diT /dt
500 A / s
t f 3 .0 s
VT ( on state ) 4.4V
I TAVM
1000A
dvT /dt
1000V / s
I TRMS
-
1570A
diG1 /dt
diG2 /dt
40 A / s
40 A / s
at I T 4000A
VDRM - Repetitive peak off-state voltage
VRRM
I TGQM
- Repetitive controllable on-state current I TAVM
I RRMS - Maximum rms on-state current
- Repetitive peak reverse voltage
- Maximum average on-state current
Part number - 5SGA 40L4501 (ABB)
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
Integrated Gate Commutated Thyristor (GCT)
6500V/1500A Symmetrical GCT
GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Integrated Gate Commutated Thyristor
Topic 2
• GCT Classifications
Type
Anti-parallel
Diode
Blocking
Voltage
V RRM V DRM
Example
(6000V GCT)
V DRM 6000V
V RRM 22V
Asymmetrical GCT
Excluded
Reverse Conducting
GCT
Included
VRRM 0
VDRM 6000V
Symmetrical GCT
(Reverse Blocking)
Not required
V RRM V DRM
VDRM 6000V
VRRM 6500V
Applications
For use in voltage
source inverters with
anti-parallel diodes.
For use in voltage
source inverters.
For use in current
source Inverters.
VDRM - Maximum repetitive peak forward off-state voltage
VRRM - Maximum repetitive peak reverse voltage
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Integrated Gate Commutated Thyristor
Topic 2
• Switching Characteristics
vT , iT
iT
vT
0.9VD
VD
ID
0.4 I D
0.1VD
0
t
t don t r
iG
0 .9 I D
t doff
iT
tf
iG
iG
vT
diG1 / dt
t
0
vG
diG 2 / dt
vG
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
Integrated Gate Commutated Thyristor
• Main Specifications
6000V/6000A Asymmetrical GCT
Maximum
Rating
V DRM
6000V
Turn-on
Switching
Switching
Characteristics t don 1.0 s
t r 2.0 s
V RRM
22V
Turn-off
Switching
t doff 3.0 s
tf
I TQRM
6000A
diT /dt
1000A / s
I TAVM
2000A
dvT /dt
3000V / s
I TRMS
-
3100A
diG1 /dt
diG2 /dt
200 A / s
- N/A
10,000
A/ s
VT ( on state ) 4V
On-state
at I T 6000 A
Voltage
VDRM - Repetitive peak off-state voltage
VRRM
- Repetitive peak reverse voltage
I TGRM - Repetitive controllable on-state current I TAVM
- Maximum average on-state current
I RRMS - Maximum rms on-state current
Part number – FGC6000AX120DS (Mitsubishi)
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
Insulated Gate Bipolar Transistor (IGBT)
1700V/1200A and 3300V/1200A IGBT modules
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
Insulated Gate Bipolar Transistor (IGBT)
• IGBT Characteristics
iC
C
vG
+15V
vCE
G
t
0
E
IC
VGE 5
vGE
t
0
VGE 4
VGE 3
90%
+15V
iC
90%
VGE 2
VGE1
0
2V
VCE
Static V-I Characteristics
10%
0
tdon tr
tdoff
t
tf
Switching characteristics
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Topic 2
Insulated Gate Bipolar Transistor (IGBT)
• Main Specifications
3300V/1200A IGBT
Maximum
Rating
Switching
Characteristics
VCE
3300V
t don
0.35 s
IC
1200A
tr
I CM
-
2400A
t doff
-
tf
1.7 s
0.2 s
0.27 s
I CE sat 4.3V
Saturation
at I C 1200 A
Voltage
VCE - Rated collector-emitter voltage
I C - Rated dc collector current
I CM - Maximum repetitive peak collector current
Part number – FZ1200 R33 KF2 (Eupec)
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Device Series Operation
Topic 2
• Cause of Voltage Imbalance
Type
v1
S1
Causes of Voltage Imbalance
Static Voltage I lk – Device off-state leakage current
T j – Junction temperature
Sharing
t don
t doff
Device
v2
S2
v3
– Turn-off delay time
Qrr – Reverse recovery charge of
T j
Dynamic
Voltage Sharing
– Turn-on delay time
anti-parallel diode
– Junction temperature
t GDon – Gate driver turn-on delay time
t GDoff
– Gate driver turn-off delay time
Gate
Driver Lwire – Wiring inductance between the
S3
the gate driver and the device gate
– Differences between series connected devices.
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Device Series Operation
Topic 2
• Equal Voltage Sharing
• S1, S2, S3:
v1
S1
GTO, GCT or IGBT
Rs
Rv
Cs
v2
S2
Rs
v1 = v2 = v3
Rv
Cs
v3
S3
Rs
in steady state
and transients
• Static Voltage Sharing:
Rv
Cs
• Voltage Sharing:
Rv
• Dynamic Voltage Sharing:
Rs and Cs
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Device Series Operation
• Active Overvoltage Clamping (AOC)
- Suitable for series IGBTs
- Not applicable to GCTs
Active Overvoltage
Clamping
Vm
Gate Signal
Conditioning
S1
Rg
vin
AOC
Vm
Vm
vCE1
iC
0
Gate Signal
Conditioning
vCE 2
S2
Amp
Rg
vCE 2
• Assumption:
S1 is turned off earlier than S2
t
td
vCE1
Amp
• VCE1 is clamed to Vm due to
active clamping.
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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Summary
Item
GTO
IGCT
IGBT
Maximum switch power
(DeviceV I )
36MVA
36MVA
6MVA
Active di/dt and dv/dt control
Active short circuit protection
Turn-off (dv/dt) snubber
Turn-on (di/dt) snubber
Parallel connection
Switching speed
No
No
Required
Required
No
Slow
No
No
Not required
Required
No
Moderate
Behavior after destruction
Shorted
Shorted
Low
High
Complex,
separate
Low
Low
Complex,
integrated
Yes
Yes
No required
No required
Yes
Fast
Open
in most cases
High
Low
Simple,
compact
High
High
Low
On-state losses
Switching losses
Gate Driver
Gate Driver Power
Consumption
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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EE8407
Topic 2
Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006
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