Emerging Research Logic Devices1 PIDS ITWG Emerging New
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Transcript Emerging Research Logic Devices1 PIDS ITWG Emerging New
ITRS Public Conference
Emerging Research Devices
Preparations for 2009 ERD
Chapter Re-write
Agenda
Emerging Research Technology Workshops (ERD/ERM)
Carbon-based Nanoelectronics Highlight
Korea ERD
Jim Hutchby – SRC
U-In Chung - Samsung
December 9, 2008
1 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Emerging Research Devices Working Group
Hiroyugi Akinaga
Tetsuya Asai
Yuji Awano
George Bourianoff
Michel Brillouet
Joe Brewer
John Carruthers
Ralph Cavin
U-In Chung
Philippe Coronel
Shamik Das
Erik DeBenedictis
Simon Deleonibus
Kristin De Meyer
Michael Frank
Christian Gamrat
Mike Garner
Dan Hammerstrom
Wilfried Haensch
Tsuyoshi Hasegawa
Shigenori Hayashi
Dan Herr
Toshiro Hiramoto
Matsuo Hidaka
Jim Hutchby
Adrian Ionescu
Kohei Itoh
Kiyoshi Kawabata
Seiichiro Kawamura
Rick Kiehl
Hiroshi Kotaki
2 ERD
AIST
Hokkaido U.
Fujitsu
Intel
CEA/LETI
U. Florida
PSU
SRC
Samsung
ST Me
Mitre
SNL
LETI
IMEC
AMD
CEA
Intel
PSU
IBM
NIMS
Matsushita
SRC
U. Tokyo
ISTEK
SRC
ETH
Keio U.
Renesas Tech
Selete
U. Minn
Sharp
Atsuhiro
Kinoshita
Franz Kreupl
Nety Krishna
Zoran Krivokapic
Phil Kuekes
Lou Lome
Hiroshi Mizuta
Murali Muraldihar
Fumiyuki Nihei
Dmitri Nikonov
Wei-Xin Ni
Ferdinand Peper
Yaw Obeng
Dave Roberts
Kaushal Singh
Sadas Shankar
Thomas Skotnicki
Satoshi Sugahara
Shin-ichi Takagi
Ken Uchida
Yasuo Wada
Rainer Waser
Franz Widdershoven
Jeff Welser
Philip Wong
Kojiro Yagami
David Yeh
In-Seok Yeo
In-K Yoo
Peter Zeitzoff
Yuegang Zhang
Victor Zhirnov
Toshiba
Qimonda
AMAT
AMD
HP
IDA
U. Southampton
Freescale
NEC
Intel
NDL
NICT
NIST
Air Products
AMAT
Intel
ST Me
Tokyo Tech
U. Tokyo
Toshiba
Toyo U.
RWTH A
NXP
NRI/IBM
Stanford U.
Sony
SRC/TI
Samsung
SAIT
Freescale
LLLab
SRC
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Evolution of Extended CMOS
Elements
Existing technologies
ERD-WG in Japan
New technologies
Beyond CMOS
year
3 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
A Taxonomy for Research Devices - I
Device
Information
Token
Control
Variable
State
Variable
Data
Transfer
Token
Possible
Strengths
Challenges
FET – Novel
Materials
Electron
Charge
Charge
Electron
Improved
performance
Material
integration;
power density
SpinFET
Electron
Charge &
Spin
Charge
Electron
Two Control
mechanisms
Spin injection
Power,
Density
Tunneling
Transistor
Electron
Charge
Charge
Electron
Low OFF
current &
power
Speed
Molecular
Transistor
Electron or
Atoms
Charge
Charge
Electron
Density,
energy
Self -assembly
Contacts &
interconnect,
NEMS
Atoms
Charge
Charge
Electron
Low OFF
current &
power
Speed,
Density
Memristor
Atoms
Charge
Charge,
Electron
Density,
Memory
Speed, Power
4 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 4
A Taxonomy for Research Devices - II
Device
Control
Variable
State
Variable
Data
Transfer
Token
Possible
Strengths
Challenges
Spin-Torque Electron
Spin
Spin
Electron
High T, Gain
Power,
Density
Spin-Wave
Electron
Spin
Waves
Spin
Electron
Photon
Low power
Density
Magnetic
Cellular
Automata
FM Domain
Magnetic
dipole
Spin
FM Domain
Nonvolatility,
Speed,
Density
Moving
Domain
Wall
FM Domain
Magnetic
Dipole
Spin
FM Domain
Nonvolatility,
Density,
Speed,
Power
MultiFerroic
Tunnel
Junction
FM Domain
Spin
Charge
Electron
Multibits/device
Materials
integration.
Density
5 ERD
Information
Token
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 5
A Taxonomy for Research Devices - III
Device
Information
Token
Control
Variable
State
Variable
Data
Transfer
Token
Possible
Strengths
Challenges
Optical or
Plasmonic
Atoms or
Electrons
Charge
Optical
Density
Photons
High speed
interconnect,
Density,
Power
Exciton
Excitons
Photons
Charge
Excitons
(or
Photons)
Low
scattering
interconnect
Speed,
Power.
Exciton
lifetime,
charge-less
carriers
Thermal
Transistor
Phonons
Energy
Energy (T)
Phonons
Phase
Change
Atoms
Energy
Charge
Charge
Non-volatile,
Speed,
power
Quantum
interference
devices
Electron
Charge
Charge
Electron
Speed?
Power?
Coherence,
low T, on-off
ratio
6 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008 6
New ERD/ERM Roadmapping Task
Determine which, if any, current
approaches to providing a “Beyond
CMOS” information processing
technology is/are ready for more
detailed roadmapping and enhanced
investment.
7 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Objectives
Workshop
(For each of the seven technologies)
– Receive expert inputs (pro & con)
– Clarify status, potential, and remaining challenges
– Formulate discussion/decision points to be
considered in the Sunday ERD/TWG meeting
Emerging Research Devices Working Group Mtg.
– Discuss and reach approximate consensus on
potential & challenges for each technology
– Reach approximate consensus on 1 or 2 “Beyond
CMOS” technologies sufficiently mature to benefit
from accelerated engineering development
8 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
ERD WG Process for Narrowing Candidate Technology
Options for Beyond CMOS Information Processing Devices
Develop/decide process, milestones, timeline
Develop invitation to advocates & opponents
Introduction
Potential of technology – fundamental limits
Barriers – Fundamental vs.
technological/engineering
Evaluation Criteria
Definition of 1 or 3 specific devices for
roadmapping
Readiness in 15 years
9 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
ERD WG Process for Narrowing Candidate Technology
Options for Beyond CMOS Information Processing Devices
Identify
Major information processing technology candidates
Strong technical proponent and opponent teams and
their leaders
Knowledgeable ERD Mentor for each proponent
team
Key questions to be addressed by the teams
Background materials for each technical candidate
Issue invitations to team leaders and obtain their
commitments
Obtain a white paper & background materials from each
candidate technology proponent team for ERD review
10 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
ERD WG Process for Narrowing Candidate Technology
Options for Beyond CMOS Information Processing Devices
ERD WG rate and prioritize candidate IP technologies
using a formal process prior to FxF meeting.
Conduct a FxF review of categories with each
proponent & opponent team making a presentation
On second day of ERD FxF meeting, discuss/decide
ERD’s prioritized recommendation of narrowed IP
technology options. This will include selection of 1 -2
specific devices for roadmapping within the
recommended option
Write & submit report on ERD WG’s recommendations
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2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Decision Making & Majority Voting Scheme
Each member of ERD WG will be given a maximum of 3 votes to use
in voting for their top 3 choices among the candidate technologies
(Majority Voting scheme)
ERD/ERM WG members present in the July 12 Workshop & the
July 13 FxF meeting will be eligible to vote at July 13 meeting,
based on their personal technical judgment, independent of their
corporate affiliation or regional representation,
Only 0 or 1 vote can be cast for any candidate technology
Member does not have to use all 3 votes, but cannot use more
than 3 votes.
All members can participate in the straw vote.
The Candidate Technologies will be ordered according to which
received the largest number of votes.
Consensus approval will be our goal, but a 75% affirmative vote will
be required as a minimum. This is what is meant by the term
approximate consensus.
12 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
2008 ERD/ERM Workshops
Workshop topic
Date
Location
Emerging Research
Memory Devices
April
2008
Emerging Research
Architectures
Evaluation of
Beyond CMOS
Logic Device Tech
Emerging Research
Logic Devices
Emerging Research
Materials
July 10-11
2008
Sept. 22
2008
Nov. 10
2008
Santa Cruz,
CA, USA
San
Francisco,
CA, USA
Tsukuba,
Japan
Austin, TX,
USA
Emerging Research
Materials
March
2009
Okinawa,
Japan
2
July 12-13
2008
Bonn,
Germany
Meeting
ITRS
Spring
meeting
Semicon
West
Semicon
West
SSDM
MMM*
* 53rd Magnetism and Magnetic Materials Conference
Co-sponsored by the National Science Foundation
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2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Candidate Technologies for Information Processing
Device Technology Entry
Augment/Extend CMOS
Nanoelectromechanical Switch
Beyond CMOS
X
Spin Transfer Torque
X
Collective Strongly Correlated Many-electron Spin Devices
X
Carbon-based Nanoelectronics
X
Atomic / Electrochemical Metallization Switches
X
Single Electron Transistors
X
CMOL / FPNI (Field Programmed Nanowire Interconnect)
X
14 ERD
X
2008 ITRS Winter Conference – Seoul, Korea – 9 December 200814
Emerging Research Device
Technology Candidates Evaluated
Nano-electro Mechanical Switches
Collective Spin Devices
Spin Transfer Torque Devices
Atomic/Electrochemical Metallization Switch
Carbon-based Nanoelectronics
Single Electron Transistors
CMOL / Field Programmable Nanowire
Interconnect (FPNI)
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2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
End of the Road map:
Quest for Beyond Si CMOS Era
16 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
SP2 Carbon: 0-Dimension to 3-Dimension
p
s
Atomic orbital sp2
0D
Fullerenes (C60)
17 ERD
1D
Carbon Nanotubes
2D
Graphene
3D
Graphite
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Graphene Electronics: Conventional & Non-conventional
Conventional Devices
FET
Band gap engineered
Graphene nanoribbons
Graphene quantum dot
(Manchester group)
Nonconventional Devices
Graphene Veselago lense
Cheianov et al. Science (07)
18 ERD
Graphene Spintronics
Graphene psedospintronics
Son et al. Nature (07)
Trauzettel et al. Nature Phys. (07)
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Isd (mA)
Nanotube FET
-1.2
-0.8
-0.4
0
Vsd (V)
Schottky barrier switching
Band gap:
0.5 – 1 eV
On-off ratio:
~ 106
Mobility:
~ 100,000 cm2/Vsec @RT
Ballistic @RT ~ 300-500 nm
Fermi velocity: 106 m/sec
Max current density
> 109 A/cm2
Philip Kim – Columbia Univ.
Ph. Avouris et al, Nature Nanotechnology 2, 605 (2007)
19 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Graphene : Dirac Particles in 2-dimension
Band structure of graphene (Wallace 1947)
E
Energy
hole
kx'
ky'
electron
ky
kx
Zero effective mass particles moving with a constant speed vF
E vF k
Philip Kim – Columbia Univ.
20 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Conductivity and mobility: Role of Disorder
• Minimum carrier density is finite (n0); puddles of electrons (holes)
• Conductivity has a finite minimum s min n0em
• nimp – impurity concentration e.g. at the graphene/SiO2 interface
1
• m (20e / h)nimp
, n0 0.5 nimp (low nimp) – 0.2nimp (high nimp)
Adam, Hwang, Galitski, Das Sarma, Proc. Nat. Acad. Sci. (2008)
slope ~ m
s
no impurities
with disorder
smin=n0em
n ( or Vg)
SEYOUNG KIM - UT AUSTIN
21 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Graphene
bipolar
heterojunctions
LG
VLG
VSD
LG
EL
EL
CLG
S
D
CBG
GLs
GLs
1 mm
VBG
Local Gate Region
-Density in GLs can be n or p type
G (e2/h)
7
VLG = -10 V
5
-Density in LGR can be n’ or p’ type
3
We expect two Dirac minima!
1
-50
-25
0
25
VBG (V)
50
Oezyilmaz, Jarrilo-Herrero and Kim PRL (2007)
Related work by Huard et al. PRL (2007)
22 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Graphene heterojunction Devices
p
n’ p
1 mm
G (e2/h)
50
potential
2 4 6 8 10 12
VBG (V)
25
0
n-p’-n
x
n
n-n’-n
n’
n
potential
-25
-50
p-p’-p
-10
-5
p-n’-p
0
10
5
x
n
p
n
potential
VLG (V)
G (e2/h)
7
5
x
p
p’
p
p
n
p
1
23 ERD
-50
-25
0
25
VBG (V)
50
potential
3
x
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Graphene Nanoribbons: Confined Dirac Particles
Gold electrode
Graphene
Dirac Particle Confinement
W
ky
3p
W
ky
2 p
W
ky
1 p
W
W
1 mm
10 nm < W < 100 nm
x
y
Graphene nanoribbon theory partial list
Dk y
W
p
W
E vF k x (pn / W ) 2
2
Zigzag ribbons
Egap~ hvF Dk ~ hvF/W
24 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Carbon-based Nanoelectronics
Bandgap vs. Ribbon Width
Philip Kim – Columbia Univ.
25 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Carbon-based Nanoelectronics
Pros and Cons of CNTs
Pros
Cons
Ballistic transport - very high mobilities
Growth process to control placement,
and saturation velocities
alignment, chirality, type
(semiconductor or metallic), diameter,
single wall or multiple wall, bandgap,
etc.
Demonstrated FETs and circuits
Schottky barriers for source/drain
electrodes – bipolar channel current
Suitable for surround-gate MOSFETs
Contact resistance quite high
Metallic and semiconducting CNTs
Requires multiple parallel CNTs to
available
obtain Ion.
Low FET gate capacitance, ~ 10aF
Low Vdd
S < 60mV/decade in BTBT FET – low
switching energy
26 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Carbon-based Nanoelectronics
Pros and Cons of GNRs
Pros
Cons
Excellent charier transport properties
Need a viable growth process to fabricate
epitaxial graphene.
Fabricated FETs exhibit good performance;
Need a means to control ribbon edge
structures and states precisely
unlike CNTs a single FET with good width
scaling property can provide required Ion.
Bandgap energy is a function of ribbon
Carrier mobility decreased substantially
width and bias potential perpendicular to
while energy bandgap increases with
the graphene layer.
decreasing ribbon width. May be difficult to
simultaneously obtain high mobility and
high bandgap energy required for FETs.
Linear dispersion, variable bandgap energy,
Band-to-band-tunneling current may be a
and pseudospin offer possibility of new
source of unacceptably high leakage
devices and new device functions
current in FETs..
Long carrier mean free path and quantum
May need a transition from GNT to CNTs
coherence lengths
and back.
Band-to-band-tunneling possible which can
Most, if not all new devices require
manipulation of electrostatic potential.
provide the basis for FETs with S <
60mV/decade
Contact resistance likely to be very high
due to the GNR geometry.
27 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Advantages
Carbon-based Nanoelectronics --For scaled CMOS, potentially can ..
Impact geometric scaling by providing an alternate
MOSFET structure, and
Provide a high mobility, high carrier velocity,
MOSFET channel replacement material.
For a new information process technology,
potentially can …
Leverage R & D for CMOS (above) to …
Provide a technology platform enabling a new “Beyond
CMOS” information processing paradigm
28 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Carbon-based Nanoelectronics
The intent of this recommendation is to
highlight Carbon-based Nanoelectronics for
additional roadmapping and investment ---
while sustaining exploration of other candidate
approaches for “Beyond CMOS” information
processing technology.
29 ERD
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Emerging Research Device
Work Groups
International Emerging Research Devices (ERD)
Work Group
US ERD
WG
30 ERD
Japan ERD
WG
Korea ERD
WG
European ERD
WG
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008
Summary
Prepared for the 2009 ERD Chapter re-write
Conducting six workshops in collaboration with
NSF, SRC, and ERM (Five accomplished)
–
–
Evaluate technology entries for 2009
Respond to IRC request (see next bullet)
Responded to IRC request to identify one or more
Beyond CMOS technologies for roadmapping and
enhanced investment
–
–
31 ERD
Conducted in-depth evaluation of seven Beyond CMOS
technologies (including one device architecture)
Recommended Carbon-based Nanoelectronics to IRC
2008 ITRS Winter Conference – Seoul, Korea – 9 December 2008