Transcript Document
3-6 September 2002 Antwerp Hilton, Belgium
Outline Wednesday Sept 4
th
, 2002
Introduction
Exposure tools/Immersion lithography
Materials
Lasers
Thursday Sept 5
th
, 2002
Resists I
Metrology
Friday Sept 6
th
,2002
Masks
Resists II
General / closure
08:40 09:00 09:20 09:40
Exposure tools and immersion lithography
Session chairs : G. Fueller, A. Suzuki, R. Garreis
Nikon F2 Exposure Tool
Soichi Owa, Naomasa Shiraishi, Issei Tanaka, Yasuhiro Ohmura, Kazuhiro Kido
Nikon Corporation
Development of 157nm Exposure Tools
Hideo Hata
Canon Inc., Semiconductor Equipment Development Center
157nm Exposure Tool
Hans Jasper 1 ,Herman Boom 1 , Tammo Uitterdijk 1 , Theo Modderman 1 , Jan Mulkens 1 , Judon Stoeldraijer 1 , Martin Brunotte 2 , Birgit Mecking 2 , Nils Dieckmann 2
1 ASML Veldhoven, 2 Carl Zeiss
Update on MSVII Lithographic System
J. McClay, B. Tirri, H. Sewell, T. Fahey
ASML Wilton
10:30 10:50 11:10 11:30
Exposure tools and immersion lithography
Session chairs : G. Fueller, A. Suzuki, R. Garreis
Drivers, Prospects and Challenges for Immersion Lithography (INVITED)
Burn J. Lin
TSMC
Immersion Lithography: Optics for the 50nm Node
M. Switkes, M. Rothschild
MIT Lincoln Laboratory
157nm Objective Improvements, Wavefront Measurements and Modeling Predictions
James Webb, Steve Mack, Tim Rich, Horst Schreiber
Corning Tropel Corporation
High Numerical Aperture Lens for 157nm Lithography
Toshifumi Suganaga 1 , Noriyoshi Kanda 1 , Jae-Hwan Kim 1 , Osamu Yamabe 1 , Kunio Watanabe 1 , Takamitsu Furukawa 1 , Seiro Miyoshi 1 , Toshiro Itani 1 , Julian Cashmore 2 , Malcolm Gower 2 1 Selete, 2 Exitech Ltd.
13:30 13:50 14:10 14:30 14:50
Materials
Session chairs : R. Sparrow, S. Kikugawa, E. Moersen
Calcium Fluoride Quality Improvement Will Enable High Volume F2 Lithography Tools
G. Grabosch, K. Knapp, L. Parthier, E. Mörsen
Schott Lithotec AG
Progress in the Development of CaF2 Materials for 157nm Lithography Applications
Bill Rosch, Michael Genier
Corning Inc.
Crystal Growth of CaF2 – Focus on Yield Enhancement
N. Senguttuvan 1 , K. Sumiya 1 , K. Susa 1 , M. Ishii 2
1 Research & Development Center, Hitachi Chemical Co., Ltd., 2 Technology Shonan Institute of
CaF2 Ramp Challenges for 157nm Lithography
Janice M. Golda
Intel Corporation
Index- and Birefringence-Dispersion Properties of CaF2, SrF2 and Ca1-xSrxF2 down to 157nm
John H. Burnett 1 , Zachary H. Levine 1 , Eric L. Shirley 1 , Robert Sparrow 2
1 National Institute of Standards and Technology, 2 Corning Inc.
15:10 16:00 16:20 16:40
Materials
Session chairs : R. Sparrow, S. Kikugawa, E. Moersen
Modified Fused Silica Glass “AQF” for 157 nm Lithography
Y.Ikuta, T. Minematsu, H. Kojima, S. Kikugawa, Y. Sasuga
Asahi Glass Co. Ltd.
Refractory Oxide Contamination of Optical Surfaces at 157 nm
T.M. Bloomstein, J.H.C. Sedlacek, S.T. Palmacci, D.E. Hardy, V. Liberman, M. Rothschild
MIT Lincoln Laboratory
Long-Term Durability of Optical Coatings
V. Liberman 1 , M. Rothschld 1 , N.N. Efremow 1 , S.T. Palmacci 1 , J.H.C. Sedlacek1, A. Grenville 2
1 MIT Lincoln Laboratory, 2 Intel Corporation/International SEMATECH
Accelerated Damage to CaF2 and MgF2 Surfaces
V. Liberman 1 , M. Rothschld 1 , N.N. Efremow 1 , A. Grenville 2
1 MIT Lincoln Laboratory, 2 Intel Corporation/International SEMATECH
Lasers
Session chairs : R. Sandstrom, H. Mizoguchi, R. Paetzel
17:00 17:20 17:40
High Power, High Repetition Rate F2-Laser for 157 nm Lithography
S. Spratte 1 , F. Voss 1 , I. Bragin 1 , E. Bergmann 1 , N. Niemöller 1 , T. Nagy 1 , U. Rebhan 1 , K. Vogler 1 , I. Klaft 1 , R. Pätzel 1 , G. Govorkov 2 , G. Hua 2
1 Lambda Physik AG, 2 Lambda Physik Inc.
F2 MOPA. Some Aspects of Spectral Purity
German Rylov
Cymer Inc.
Spectral Dynamics Analysis of Ultra-Line-Narrowed F2 Laser
Ryoichi Nohdomi 3 , Tatsuya Ariga 3 , Hidenori Watanabe 3 , Takahito Kumazaki 3 , Kazuaki Hotta 4 , Hakaru Mizoguchi 3 , Akihiko Takahashi 1 , Tatsuo Okada 2
1 Kyushu University School of Health Sciences, 2 Kyushu University, 3 Gigaphoton Inc., 4 Ushio Inc.
Resists I
Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel
08:30 08:50 09:10
Recent Advancements in 157nm Resist Performance
Karen Turnquest 1 , V. Graffenberg 2 , S. Patel 2 , D. Miller 2 , K. Dean 2 , A.-M. Goethals 3 , F. Van Roey 3 , Jan Hermans 3 , K. Ronse 3 , P. Wong 4 , S. Hansen 4
1 AMD Assignee to International SEMATECH, 2 International SEMATECH, 3 IMEC, 4 ASML Veldhoven
Performances of Fluoropolymer Resists for 157-nm Lithography
Seiichi Ishikawa, Minoru Toriumi, Tamio Yamazaki, Toshiro Itani
Selete
Intel 157 nm Resist Benchmarking
Jeanette Roberts 1 , Paul Zimmerman 2 , Robert Meagley 1 , Jim Powers 1
1 Intel Corporation, 2 Intel Assignee to International SEMATECH
09:30 09:50 10:10
Resists I
Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel
Advances in Fluorinated Polymers for 157nm Lithography
Will Conley 1 , Paul Zimmerman 1 , Daniel Miller 1 , Brian Trinque 2 , H.V. Tran 1 , Brian Osborn 2 , Charles Chambers 2 , Yu-Tsai Hsieh 2 , Schuyler Corry 2 , Takashi Chiba 2 , C. Grant Willson 2
1 International SEMATECH, 2 Department of Chemistry & Chemical Engineering, University of Texas at Austin
Fluoropolymer Resists for Single Layer 157 nm Lithography: Optimization of Their Combined Properties
M. K. Crawford, W. Farnham, A. E. Feiring, J. Feldman, R. H. French, K. W. Leffew, S. Nassirpour, V. A. Petrov, F. L. Schadt III, R. J. Smalley, F. C. Zumsteg
DuPont
Process and Formulation Development of Dissolution Inhibitors for 157 nm Microlithography: A Progress Report
Charles Chambers 1 , Will Conley 2 , Daniel Miller 3 , Brian Osborn 1 , Hoang V. Tran 1 , Brian Trinque 1 , Matthew Pinnow 1 , Takashi Chiba 1 , Paul Zimmerman 4 , C. Grant Willson 3
1 Departments of Chemistry and Chemical Engineering, University of Texas, 2 Motorola assignee to International SEMATECH, 3 International SEMATECH, 4 Intel assignee to International SEMATECH
11:00 11:20 11:40
Metrology
Session chairs : J. Burnett, Y. Watakabe, W. Harnisch
Angle Resolved Scattering Measurements at 157nm
T.M. Bloomstein, D.E. Hardy, M. Rothschild
MIT Lincoln Laboratory
VUV Spectroscopic Ellipsometry Studies of Key Substrate Materials for 157nm Lithography
1 N.V. Edwards, 1 S. Zollner, 1 J. Kulik, 1 Q. Xie, 1 M. Erickson, 1 X.-D. Wang, 1 D. Roan, 2 T.E. Tiwald
1 Motorola APDER; 2 J.A. Woollam Co.
Automated Metrology System Combining VUV Spectroscopic Ellipsometry and Grazing X-Ray Reflectance for the Characterization of Thin Films and Multilayers of 157nm Lithography
Pierre Boher, Patrick Evrard, Jean Philippe Piel, Christophe Defranoux, Jean Louis Stehle
SOPRA
Metrology
Session chairs : J. Burnett, Y. Watakabe, W. Harnisch
12:00 12.20
Exicor Duv Birefringence Measurement System At Optical Lithography Wavelengths
B. Wang, G. Bonar, A.Mikheyev, C. Mansfield, A. Breninger, J. List, R. Rockwell Hinds Instruments, Inc.
High Brightness F2* (157nm) and ArF* (193nm) Lamps
Manfred Salvermoser, D.E. Murnick Rutgers University, Dept. of Physics
Masks
Session chairs : C. Progler, N. Hayashi, C. Schilz
08:30 08:50 09:10
Electron Beam Induced Processes and their Applicability to Mask Repair
Johannes Bihr 2 , Volker Boegli 1 , Jens Greiser 2 , Hans W.P. Koops 1
1 NaWoTec GmbH, 2 LEO Elektronenmikroskopie GmbH
Development of Bilayered TaSiOx Embedded Attenuating PSM
Toshiaki Motonaga, Motoji Tabei, Kenji Noguchi, Masaharu Nishiguchi, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, Morihisa Hoga, and Naoya Hayashi
Dai Nippon Printing Co. Ltd.
157nm Attenuated PSM Films by Ion Beam Sputter Deposition
Matthew Lassiter, Michael Cangemi, Darren Taylor
Photronics Inc.
09:30 09:50 10:10 10:30
Masks
Session chairs : C. Progler, N. Hayashi, C. Schilz
Implementation Challenges of Fused Silica Pellicles for 157-nm Lithography
Andrew Grenville 1 , Emily Fisch 2 , Ivan Lalovic 3 , Emily Shu 4 , Kyle Spurlock 5 , Chris Van Peski 6 , Eric Cotte 7 , Phillip Reu 7 , Roxann Engelstad 7 , Edward Lovell 7
1 International SEMATECH/Intel Corporation, 2 IBM Microelectronics, 3 Advanced Micro Devices, 4 Intel Corporation, 5 International SEMATECH/ Advanced Micro Devices, 6 International SEMATECH, 7 University of Wisconsin
Feasibility of Defect Inspection of 157nm Reticles Through Thick Pellicles
Jim Wiley
KLA Tencor Corporation
Fused Silica Pellicle Mounting Issues
Chris Van Peski 1 , Andrew Grenville 2 , Emily Shu 3
1 International SEMATECH , 2 3 Intel Corporation International SEMATECH/Intel Corporation,
Improvement of the Membrane Durability of Polymeric Pellicles
Ikuo Matsukura
ASAHI Glass Co. Ltd.
11:20 11:40 12:00
Resists II
Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel
Resist Contamination Issues at 157nm
Kim Dean 1 , David Stark 1 , Jeff Meute 2 , Karen Turnquest 3
1 International SEMATECH, 2 IBM Assignee to International SEMATECH, 3 AMD Assignee to International SEMATECH
Evolution of Low Absorbance 157nm Fluoresists
Gary Taylor, Sassan Nur, Cheng Bai Xu, Gary Teng, JoAnne Leonard
Shipley Co.
Development of Silsesquioxane Based 157nm Photoresist: an Update
Raymond J. Hung 1 , Mikio Yamachika 1 , Takashi Chiba 2 , Haruo Iwasawa 2 , Akihiro Hayashi 2 , Noboru Yamahara 2 , Tsutomu Shimokawa 2
1 JSR Microelectronics Inc, 2 JSR Corporation
12:20 12:40
Resists II
Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel
Platform Considerations for 157 nm Photoresists
Ralph R. Dammel 1 , Francis Houlihan 1 , Raj Sakamuri 1 , Sang-Ho Lee 1 , M. Dalil Rahman 1 , Takanori Kudo 1 , Andrew Romano 1 , Larry Rhodes 2 , Chun Chang 2 , John Lipian 2 , Cheryl Burns 2 , Dennis A. Barnes 2 , Will Conley 3 , Daniel Miller 3
1 AZ Electronic Materials,Clariant Corporation, 2 Promerus LLC, 3 International SEMATECH
Pragmatic Approaches to 157nm Resist Design
Sanjay Malik 1 , Stephanie Dilocker 1 , Tadayoshi Kokubo 2
1 Arch Chemicals, Inc., 2 FUJIFILM ARCH Co. Ltd
14:30 14:50
General / Closure
An Analysis of 157nm Technology Cost of Ownership
Walt Trybula and Phil Seidel
International SEMATECH
Closing Remarks
Luc Van den hove
IMEC
Poster Session: Metrology
Line-Edge Roughness Calculation of Photoresists Using Off-Line Analysis of Top-Down SEM Images
G. P. Patsis 1 , T. Hoffmann 2 , G. Grozev 3 , A. Tserepi 1 , V. Constantoudis 1 , and E Gogolides 1 1
NCSR Demokritos, Institute of Microelectronics,
2
IMEC vzw,
3
Assignee of ARCH Chemicals at IMEC
Analysis of Top-down SEM Images of Resists for Line-edge Roughness (LER) Calculations: What are the Best Descriptors of LER Based on Scaling and Fractal Analysis?
V. Constantoudis 1 , G. P. Patsis 1 , T. Hoffmann 2 , G. Grozev 3 , A. Tserepi 1 , and E Gogolides 1 1
NCSR Demokritos, Institute of Microelectronics,
2
IMEC vzw,
3
Assignee of ARCH Chemicals at IMEC
Poster Session: Masks
Molecular Contamination in 157 nm Lithography: Feasibility of Reticle Cleaning
Anton Duisterwinkel 1 , Willem van Schaik 2
1 TNO TPD Center for Contamination Control, 2 ASML, Veldhoven
Development of Hard Pellicle for 157 nm lithography
K.Okada, K.Ootsuka, I.Ishikawa, Y.Ikuta, H.Kojima, T.Kawahara, T.Minematsu, H.Mishiro, S. Kikugawa and Y.Sasuga
ASAHI Glass Co. Ltd.
Fundamentals of Transparancy in Fluoropolymers for Use as 157nm Soft Pellicles
Roger H. French 1 , Robert C. Wheland 1 , M. F. Lemon 1 , Edward Zhang 2 , Joseph Gordon 2
1 DuPont Co. Central Research, 2 DuPont Photomasks Inc.
Printing 65nm Dense Lines by Using Phase Masks at 157nm Wavelength
L.A. Wang, H. C. Chen
Institute of Electro-Optical Engineeing, National Taiwan University
Poster Session: Lasers
A Novel Large Area 172nm Xe 2 * VUV Excimer Lamp
Manfred Salvermoser, D.E. Murnick
Rutgers University, Dept. of Physics
Compact Excimer Lasers at 157 nm for Metrology and Inspection
A. Görtler, C. Strowitzki
TuiLaser AG
Poster Session: Materials
The Small Optical Anisotropy in CaF 2 : on the Connection to Exciton Dispersion
M. Letz 1 , W. Mannstadt 1 , M. Brinkmann 1 , G. Wehrhan 2 , L. Parthier 2 , E. Mörsen 2
1 Schott Glas, Research and Development, 2 Schott Lithotec AG
Ultrasonic Sensor System For Calcium Fluoride Crystal Manufacture
Joe Rose 1 , Chuck Morris 1 , John Schupp 2 , Kyle Spurlock 3
1 Pennsylvania State University, 2 ACT Optics and Engineering, Inc., 3 International SEMATECH
Optical Properties of Ca x Sr ( 1-x) F 2 Crystals
Robert W. Sparrow
1
, Charlene M. Smith
2 1 Specialty Materials Division, Corning Incorporated, Technology Division, Corning Incorporated 2 Science and
Poster Session: Materials
Equipment for Annealing of Ca F 2
Serhat Yesilyurt, Shariar Motakef
Cape Simulations, Inc.
The Influence of Contamination on 157 nm Optical Components
Lutz Raupach
Jenoptik Laser, Optik, Systeme GmbH
Poster Session: Exp. Tools
EHS impacts associated with the emerging materials and processes of advanced photolithography
Jeffrey Heaps
International SEMATECH
157nm 0.85NA Lens Upgrade at ISMT
Jeff Meute 1 , Yung-Tin Chen 1 , Georgia Rich 1 , Julian Cashmore 2 , Malcolm Gower 2 , Dominic Ashworth 2 , Jim Webb 3 , Bruce Smith 4
1 International SEMATECH, 2 Exitech Ltd., 3 Corning Tropel, 4 Rochester Institute of Technology
Process Simulation and Optimization with 157-nm High NA Lens for 65 nm Node
Yung-Tin Chen, Jeff Meute, Karen Turnquest, Kim Dean
International SEMATECH
Extreme-NA Water Immersion Lithography for 35-65 nm Technology
Bruce Smith, Hoyoung Kang, Anatoli Bourov
Rochester Institute of Technology
Poster Session: Exp. Tools
Fluor : Frontline Lithography Using Optical Refraction, The European Initiative to Enable 157nm Lithography
Judon Stoeldraijer 1 , Mieke Goethals 2 , Wolfgang Henke 3 , Ewald Mörsen 4
1 ASML Veldhoven, 2 IMEC, 3 Infineon Technologies AG, 4 Schott Lithotec AG
Poster Session: Resists
UV2Litho : Usable Vacuum Ultra Violet Lithography
A.M. Goethals
1
, R. Jonckheere
1
, F. Van Roey
1
, Jan Hermans
1
, A. Eliat
1
, K. Ronse
1
, P. Wong
2
, P. Zandbergen
3
, M. Vasconi
4
, E. Severgnini
4
, W. Henke
5
, C. Hohle
6
, D. Henry
7
, Ph. Thon
7
, L. Markey
7
, P. Schiavone
8
, D. Fuard
8 1 IMEC, 2 ASML Veldhoven, 3 Philips Research, 4 STMicroelectronics S.r.l Agrate Brianza, 5 Infineon Technologies AG Dresden, 6 Infineon Erlangen, 7 STMicroelectronics Crolles, 8 CNRS
Printing 65nm Dense Lines by Using Phase Masks at 157 nm Wavelength
L.A. Wang, H. C. Chen
Institute of Electro-Optical Engineeing, National Taiwan University
Poster Session: Resists
New Silsesquioxane and Siloxane Based Resist Copolymers for 157nm Lithography
V. Bellas 1 , E. Tegou 1 , I. Raptis 1 , E. Gogolides 1 , P. Argitis 1 , E. Sarantopoulou 2 , A.C. Cefalas 2
1 Institute of Microelectronics, NCSR Demokritos, 2 Institute of Physical and Theoretical Chemistry, NHRF
Impact of Resist Absorbance on CD Control
Laurent Markey 1 , Peter Zandbergen 2
1 STMicroelectronics, 2 Philips Semiconductors
Thermal Behavior of Dissolution Inhibitors
Geunsu Lee 1 , Paul Zimmerman 1 , Will Conley 1 , Daniel Miller 1 , Charles Chambers 2 , Brian Osborn 2 , Shiro Kusumoto 2 , C. Grant Willson 2
1 International SEMATECH,
2
Department of chemistry, University of Texas
Poster Session: Resists
Parameter Extraction for 157nm Photoresists
Will Conley 1 , J. Bendik 2 , Daniel Miller 3 , Paul Zimmerman 4 , Kim Dean 3 , John Petersen 5 , Jeff Byers 6 , Ralph Dammel 7 , Raj Sakumari 7 , Frank Houlihan 7
1 Motorola assignee to International SEMATECH, 2 Dynamic Intelligence Inc. 3 International SEMATECH, 4 Intel assignee to International SEMATECH, 5 Petersen Advanced Lithography, 6 KLA-Tencor; Finle Technologies Division, 7 Clariant Corporation
Fluoropolymer Resists for 157 nm Lithography
Vaishali Vohra 1 , Katsuji Douki 1 , Xiang-Qian Liu 1 , Young-Je Kwark 1 , Christopher Ober 1 , Will Conley
2
, Daniel Miller
2
, Paul Zimmerman
2 1 Department of Materials Science & Engineering, Cornell University, 2 International SEMATECH
Molecular Anisotropy in 157nm Photoresist Materials
Jeanette Roberts, Robert Meagley, Adam J. Schafer
Intel Corporation
Poster Session: Resists
Negative Photoresist for 157 nm Microlithography
Paul Zimmerman 1* , Brian Trinque 2 , Will Conley 3 , Daniel Miller 4 , Ralph Dammel 5 , Andrew Romano 5 , Raj Sakumari, Shiro Kumamoto 2 , Hoang Tran 2 , Matthew Pinnow 2 , Ryan Callahan 2 , Charles Chambers 2 , C. Grant Willson 2
1 Intel assignee to International SEMATECH, 2 Departments of Chemistry and Chemical Engineering, University of Texas, 3 Motorola assignee to International SEMATECH, 4 International SEMATECH, 5 Clariant Corporation
Synthesis and Properties of Noval Fluoropolymer for 157nm Photoresists by Cyclo-polymerization
Osamu Yokokoji 1 , Shun-ichi Kodama 1 , Isamu Kaneko 1 , Yoko Takebe 1 , Shinji Okada 1 , Yasuhide Kawaguchi 1 , Shigeo Irie 2 , Seiichi Ishikawa 2 , Minoryu Toriumi 2 , Toshiro Itani 2 1 Asahi Glass Co. Ltd., 2 Selete
Advances in TFE Based Fluoropolymers for 157nm Lithography: A Progress Report
Iqbal Sharif 1 , Darryl DesMarteau 1 , Will Conley 2 , Paul Zimmerman 3 , Daniel Miller 4 , Guen Su Lee 5 , Charles Chambers 6 , Brian Trinque 6 , Takashi Chiba 6 , Brian Osborn 6 , C. Grant Willson 4 1 Clemson University, Dept of Chemistry, 2 Motorola assignee at International SEMATECH, 3 Intel assignee at International SEMATECH, 4 International SEMATECH, 5 Hynix assignee at International SEMATECH, 6 Department of Chemistry & Chemical Engineering, University of Texas at Austin