Small Signal Model
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Transcript Small Signal Model
MOS Field-Effect
Transistors (MOSFETs)
1
MOSFET ( Voltage Controlled Current Device)
•
MOS
•
FET
Metal Oxide Semiconductor
Physical Structure
Field Effect Transistor
The current controlled mechanism is based on an electric field established by the
voltage applied to the control terminal – GATE
•
Uni-polar
Current is conducted by only one carrier
•
IGFET
Insulated Gate FET
•
CMOSFET
•
Complementary MOSFET
1930 was Known, 1960s Commercialized
1970s Most commonly used VLSI
• NMOSFET/PMOSFET
n/p-channel enhancement mode MOSFET
MOSFET
• Small Size
• Manufacturing process is simple
• Requires comparatively low power
• Implement digital & analog functions with a fewer
resistors very large scale Integrated (VLSI) circuit
• Study Includes
–
–
–
–
–
Physical structure
Operation
Terminal characteristics
Circuit Models
Basic Circuit application
Figure 4.1 Physical structure of the enhancement-type NMOS
transistor:
Device Structure
• Types
“n” channel enhancement MOSFET
“p” channel enhancement MOSFET
• “n” Channel MOSFET
– Fabricated on a p-type substance that provides physical support for
the device.
– Two heavily doped n-type region are created
• n+ Source (‘S’)
n+ for lightly doped ‘n’ type silicon
• n+ Drain (‘D’)
n+ for heavily doped ‘n’ type silicon
– Area between source & Drain
• Thin Layer of Silicon dioxide (SiO2) is grown with thicker of tox =
2-50 nanometers An excellent electrical insulator
• Metal is deposited on top of the oxide layer to form
the Gate electrode. Metal contact is made to
Source & Drain and the substrate (Body)
Figure 4.1 Physical structure of the enhancement-type NMOS
transistor
Cross-section. Typically L = 0.1 to 3 mm, W = 0.2 to 100 mm, and
the thickness of the oxide layer (tox) is in the range of 2 to 50 nm.
Device Structure
• Four terminals
– Source (S)
– Gate (G)
– Drain (D)
– Body (B)
• L
W
tox
Length of channel region
Width of the substrate
Thickener of An oxide Layer
Device Structure
• Metal oxide semiconductor - name is derived
from its physical structure
• Insulted – Gate FET (IGFET) – gate is
electrically insulated from the device body
– Current in gate terminal is small (10-15 A)
• Substrate forms pn junctions with the source &
drain region & is kept reversed biased all the
time
• Drain will be at a positive voltage relative to the
source, two junctions are at cutoff mode if
substrate is connected to the source. Thus Body
will have no effect on operation of the device.
Principle of operation
• Voltage applied to the Gate controls current flow
between Source & Drain with direction from Drain to
Source in channel region
• It is a symmetrical device thus Drain & Source can be
interchanged with no change in devices characteristics
•
• With no bias gate voltage, two back-to-back diodes exist
in series between drain and source.
• No current flows even if vDS is applied. In fact the path
between Source & Drain (1012Ω) has very high
resistance
Figure 4.2 The enhancement-type NMOS transistor with a
positive voltage applied to the gate. An n channel is
induced at the top of the substrate beneath the gate.
Creating a Channel for Current Flow
• Source & Drain are grounded and a positive
voltage (vGS) is applied to the gate.
• Holes are repelled-leaving
depletion-region.
behind a carrier
• Depletion region is populated with the bounded
negative charges associated with the acceptor
atoms and are uncovered because the
neutralizing holes have been push downward
into the substrate.
Channel for Current Flow
• Positive gate attracts electrons from the n+
source & drain region into the channel region.
• Due to electrons accumulated under the gate,
an ‘n’ region is created & connects source &
drain region.
• Thus if voltage is applied between source &
drain, current flows due to mobile electrons
between drain & source.
• ‘n’ region forms a channel – ‘n’ channel MOSET
(NMOSFET)
Channel for Current Flow
• An ‘n’ channel MOSFET is formed in a ‘p’ type
substrate. Known as “Inversion Layer”.
• The value of vGS that causes sufficient number
of mobile electrons to be accumulate in the
channel region to form conducting channel is
called threshold Voltage “Vt”.
• Vt for ‘n’ channel is positive & value is 0.5 to 1V
Channel for Current Flow
• Gate & channel region form a parallel plate capacitor,
with oxide layer as the capacitor dielectric.
• Positive charge is accumulated on gate electrode &
negative charge on channel electrode.
• An electric field thus develops in the vertical direction.
• Capacitor charge controls the current flow through the
channel when a voltage vDS is applied.
• Gate
Channel
Figure 4.3 An NMOS transistor with vGS > Vt and with a
small vDS applied.
The device acts as a resistance whose value is determined by vGS.
Specifically, the channel conductance is proportional to vGS – Vt’
and thus iD is proportional to (vGS – Vt) vDS.
Applying a Small vDS
• vDS is applied (vDS = 50mV) causes iD to flow through induced ‘n’
channel.
– Direction is opposite to that of the flow of negative charges.
– Magnitude of iD depends upon density of electrons and in term on vGS .
•
vGS ≤ Vt
– Negligible current iD as the channel has been just induced.
•
vGS > Vt
– iD current increases, increases conductance of the channel & is
proportional to Excess gate voltage (vGS - Vt )
–
is known as Excess gate Voltage , Effective Voltage
Overdrive Voltage (VOV)
vGS - Vt
– MOSFET operatrates as
controlled by vGS.
a linear resistance whose value is
– vGS above Vt enhances the channel – named Enhanced Mode operation
& enhanced type MOSFET
iD = iS, iG = 0
Figure 4.4 The iD–vDS characteristics of the MOSFET
When the voltage applied between drain and source, vDS, is kept small.
The device operates as a linear resistor whose value is controlled by vGS.
Figure 4.5 Operation of the enhancement NMOS
transistor as vDS is increased. The induced channel
acquires a tapered shape, and its resistance increases as
vDS is increased. Here, vGS is kept constant at a value >
Vt.
The drain current iD versus the drain-to-source
voltage vDS for an enhancement-type NMOS
transistor operated with vGS > Vt.
Increasing vDS causes the channel to acquire a tapered shape.
Eventually, as vDS reaches vGS – Vt’ the channel is pinched off
at the drain end. Increasing vDS above vGS – Vt has little effect
(theoretically, no effect) on the channel’s shape.
Derivation of the iD–vDS characteristic of the NMOS
transistor.
Drain Current iD
• Directly Proportional to:
–
–
–
–
–
Mobility of Electrons in the channel μn (μm2/V)
Gate Capacitance per unit gate area Cox (μF/ μm)
Width of the substrate (μm)
Gate-Source Voltage vGS (Volts)
Drain-Source Voltage v DS (Volts)
• Indirectly Proportional to:
– Length of the channel (μm)
iD – vDS relationship
Troide Mode
Saturation Mode
The p Channel MOSFET
• Fabricated on an n-type substrate with p+ regions for
Drain & Source
• Holes are the current carriers.
• vGS & vDS are negative
• Threshold voltage Vt is negative.
• Both NMOS & PMOS are utilized in Complementary
MOS or CMOS circuits
Complementary MOS or CMOS
Cross-section of a CMOS integrated circuit. Note that the PMOS transistor is
formed in a separate n-type region, known as an n well. Another
arrangement is also possible in which an n-type body is used and the n
device is formed in a p well. Not shown are the connections made to the ptype body and to the n well; the latter functions as the body terminal for the
p-channel device.
iD – vDS Charateristics
• Modes of operation
– Cutoff
– Triode (Saturation in BJT)
– Saturation ( Active in BJT)
2
The iD–vDS characteristics for a device with k’n (W/L) = 1.0 mA/V .
The iD–vGS characteristic for an enhancement-type
NMOS transistor in
2
saturation (Vt = 1 V, k’n W/L = 1.0 mA/V ).
Large-signal equivalent-circuit model of an n-channel
MOSFET operating in the saturation region.
Finite Output Resistance in Saturation
Increasing vDS beyond vDSsat causes the channel
pinch-off point to move slightly away from the drain, thus
reducing the effective channel length (by DL).
Finite Output Resistance in Saturation
Effect of vDS on iD in the saturation region. The MOSFET parameter VA
depends on the process technology and, for a given process, is proportional
to the channel length L.
Finite Output Resistance in Saturation
Large-signal equivalent circuit model of the n-channel MOSFET in
saturation, incorporating the output resistance ro. The output
resistance models the linear dependence of iD on vDS
Circuit symbol for the p-channel enhancement-type MOSFET.
Characteristics of PMOSFET
Triode Mode of Operation
Characteristics of PMOSFET
Satuaration Mode of Operation
The Roll of Substrate :
Body Effect
• Substrate for many Transistors
• Body is connected to the most negative
power supply to maintain cutoff conditions
for all the substrates to channel junctions
• Another gate
Temperature Effects
• Vt and K’n are effected by the temperature
• Vt increases by 2mV per 10C rise in
temperature
• K’n decreases with rise in temperature
thus drain current increases. The effect is
dominant. Thus ID decreases with
increase in temperature
MOSFET in Power circuits
Graphical construction to determine the transfer characteristic
of the amplifier in (a).
Circuit for Example 4.9.
Biasing the MOSFET using a large drain-to-gate feedback resistance, RG.
Biasing the MOSFET using a constant-current source
Conceptual circuit utilized to study the operation of the
MOSFET as a small-signal amplifier.
Recap : Transfer Function
Transfer characteristic showing operation as an amplifier biased
at point Q.
Conceptual circuit utilized to study the operation of the MOSFET as a small-signal amplifier.
The DC BIAS POINT
To Ensure Saturation-region Operation
Signal Current in Drain Terminal
Total instantaneous voltages vGS and vD
Small-signal ‘π’ models for the MOSFET
Common Source amplifier circuit
Example 4-10
Small Signal ‘T’ Model : NMOSFET
Small Signal Models
‘T’ Model
Single Stage MOS Amplifier
Amplifiers Configurations
Common Source Amplifier (CS) :Configuration
Common Source Amplifier (CS)
• Most widely used
• Signal ground or an ac earth is at the source
through a bypass capacitor
• Not to disturb dc bias current & voltages
coupling capacitors are used to pass the
signal voltages to the input terminal of the
amplifier or to the Load Resistance
• CS circuit is unilateral –
– Rin does not depend on RL and vice versa
Small Signal Hybrid “π” Model
(CS)
Small Signal Hybrid “π” Model : (CS)
Rin RG
R o ro || RD
vo
vo vgs
Gv
vsig vgs vsig
RG
v gs
v sig
RG Rsig
vo g m vgs ro || RD || RL
RG
vo
Gv
g m ro || RD || RL
v gs
R
R
G
sig
Small-signal analysis performed directly on the amplifier circuit with the MOSFET model
implicitly utilized.
Rin RG
R o ro || RD
RG
vo
g m ro || RD || RL
R R
v gs
sig
G
BJT / MOSFET
Rin RB || r
, 1
Rin RG
Rout ro || RC
Rout ro || RD
vo
RB || r
ro || RC || RL
gm
vsig
RB || r Rsig
vo
RG
ro || RD || RL
gm
vsig
RG Rsig
Common Source Amplifier (CS)
Summary
• Input Resistance is infinite (Ri=∞)
Rin RG
• Output Resistance = RD
R o ro || RD
• Voltage Gain is substantial
RG
vo
g m ro || RD || RL
R R
v gs
sig
G
Common-source amplifier
with a resistance RS in the source lead
The Common Source Amplifier
with a Source Resistance
• The ‘T’ Model is preferred, whenever a
resistance is connected to the source terminal.
• ro (output resistance due to Early Effect) is not included, as it
would make the amplifier non unilateral & effect
of using ro in model would be studied in Chapter
‘6’
Small-signal equivalent circuit with ro neglected.
i
vg
1
RS
gm
Small-signal Analysis.
Rin RG
Ro RD
Voltage Gain : CS with RS
vo
vo vgs vi
Gv
vsig vgs vi vsig
vo g m vgs RD || RL
1
gm
vi
vgs
vi
1
1 g m RS
RS
gm
RG
vi
vsig
RG Rsig
RG
vo
Gv
R R
vsig
sig
G
g m RD || RL
1 g R
m S
Common Source Configuration with Rs
• Rs causes a negative feedback thus
improving the stability of drain current of
the circuit but at the cost of voltage gain
• Rs reduces id by the factor
– (1+gmRs) = Amount of feedback
• Rs is called Source degeneration
resistance as it reduces the gain
Small-signal equivalent circuit directly on Circuit
A common-gate amplifier based on the circuit
Common Gate (CG) Amplifier
• The input signal is applied to the source
• Output is taken from the drain
• The gate is formed as a common input &
output port.
• ‘T’ Model is more Convenient
• ro is neglected
A small-signal equivalent circuit
A small-signal Analusis : CG
vi
vi
1
Rin
ii g m vi g m
Rout RD
A small-signal Analusis : CG
Gv
vo
v
v
o i
vsig vi vsig
vo g m vi RD || RL
1
gm
vsig
Rin
vi
vsig
vsig
1
Rin Rsig
1 g m Rsig
Rsig
gm
Gv
vo
g R || RL
m D
vsig
1 g m Rsig
Small signal analysis directly on circuit
The common-gate amplifier fed with a current-signal input.
Summary : CG
4. CG has much higher output Resistance
5. CG is unity current Gain amplifier or a Current Buffer
6. CG has superior High Frequency Response.
A common-drain or source-follower amplifier.
Small-signal equivalent-circuit model
Small-signal Analysis : CD
(a) A common-drain or source-follower amplifier :output resistance Rout of
the source follower.
Rout
1 1
ro ||
gm gm
(a) A common-drain or source-follower amplifier. : Small-signal analysis performed
directly on the circuit.
Common Source Circuit (CS)
Common Source Circuit (CS) With RS
Common Gate Circuit (CG)
Current Follower
Common Drain Circuit (CD)
Source Follower
Summary & Comparison
Quiz No 4
27-03-07
• Draw/Write the Following:
Types
Symbols
‘π’ Model
T Model
gm
Re/rs
rπ/rg
BJT
npn pnp
MOSFET
nMOS pMOS
Problem 5-44
SOLUTION : DC Analysis
SOLUTION : DC Analysis
5 I E 3.3 0.7 I B 100 0
5 I E 3.3 0.7
IE
IE
IB
IE
100 0
(1 )
5 0.7
1m A
100
3.3
101
Vt 25
re
25
I E 1.0
gm = 40mA/V
Solution Small Signal Analysis
Solution Small Signal Analysis
Solution Small Signal Analysis : Input Resistance
ib
+
vb
-
Rin
vb ( 1)vb
Rin
( 1)re RC || RL
ib
ie
Solution Small Signal Analysis : Output Resistance
Itest
IE
IRC
IE/(1+ß)
Rout
Rout
Vtest
I test
I RC
Vtest
RC
I test I RC I E I
E
Vtest
Rsig
re
(1 )
Rout
RC re
Rsig
Vtest
(1 )
RC
Vtest
Vtest
Rsig
RC re
Rsig
RC
(1 )
re
(1 )
Rsig
|| re
(1 )
Solution Small Signal Analysis : Voltage Gain
+
vo
vo veb vi
vsig veb vi vsig
veb
+
Vo
vi
+
-
vo
g m RC || RL
veb
Solution Small Signal Analysis : Voltage gain
+
veb
-
+
vi
-
vo
vo veb vi
vsig veb vi vsig
vo
g m RC || RL
veb
veb
re
vi
re RC || RL
Solution Small Signal Analysis : Voltage Gain
vo
vo veb vi
vsig veb vi vsig
vo
g m RC || RL
veb
+
vi
-
Rin ( 1)re RC || RL
veb
re
vi
re RC || RL
vi
Rin
vsig
Rin Rsig
(1 )re RC || RL
(1 )re RC || RL Rsig
Solution Small Signal Analysis : Voltage Gain
vo
vo veb vi
vsig veb vi vsig
veb
re
vi
re RC || RL
vo
g m RC || RL
veb
vi
Rin
vsig
Rin Rsig
vo
re
Rin
g m(RC||RL )
vsig
re (RC || RL ) Rin Rsig
vo
(RC||RL )
Rin
g m re
vsig
re (RC || RL ) Rin Rsig
vo
(RC||RL )
Rin
vsig
re (RC || RL ) Rin Rsig
Solution Small Signal Analysis : Voltage Gain
vo vo vi
vsig vi vsig
+
Vo
vi
+
-
vo
RC || RL
vi re RC || RL
vi
Rin
vsig
Rin Rsig
vo
(RC||RL )
Rin
vsig re (RC || RL ) Rin Rsig
Problem
Small Signal Model MOSFET : CD
Solution Small Signal Analysis
1/gm
D
gmvsg
Solution Small Signal Analysis : Input Resistance
1/gm
Ig=0
D
gmvsg
Rin
Rin
Solution Small Signal Analysis : Output Resistance
Itest
1/gm
ID
IRD
0V
D
IG=0
Vtest
gmvsg
Rout
Rout
Vtest
I test
I test I RC I D
I RD
Vtest
RD
Vtest
ID
1
gm
Rout
Vtest
1
RD ||
Vtest Vtest
gm
RD 1 / g m
Solution Small Signal Analysis : Voltage Gain
+
vsg
vo
vo vsg vi
vsig vsg vi vsig
1/gm
+
D
vi
vo
gmvsg
+
-
vo
g m RD || RL
vsg
Solution Small Signal Analysis : Voltage gain
+
vsg
1/gm
D
+
gmvsg
vi
-
vsg
vi
1
1
gm
gm
RD || RL
Solution Small Signal Analysis : Voltage Gain
1/gm
D
+
gmvsg
vi
-
Rin
vi vsig
Solution Small Signal Analysis : Voltage Gain
vo
vo vsg vi
vsig vsg vi vsig
vo
g m RD || RL
vsg
vsg
vi
1
1
gm
gm
RD || RL
vi vsig
vo
g m(RD||RL )
1
vsig
1
gm
gm
(RD || RL )
vo
(RD||RL )
1 (R || R )
vsig
D
L
gm
Solution Small Signal Analysis : Voltage Gain
vo vo vi
vsig vi vsig
1/gm
D
+
gmvsg
vi
-
+
vo
RD || RL
1 R || R
vi
D
L
gm
vi vsig
vo
RD || RL
1 R || R
vsig
D
L
gm
Solution Small Signal Analysis
Rin ( 1)re RC || RL
Rout
Rsig
RC || re
(
1
)
vo
(RC||RL )
Rin
vsig re (RC || RL ) Rin Rsig
1
Rin
Rout
1
RD ||
gm
RD || RL
vo
1 R || R
vsig
D
L
gm
Problem 6-127(e)
DC Analysis 6-127(e)
100
I E1 0.5m A
I B1 0.5 / 101 5mA 0
I C1 0.5m A
100
I E 2 0.5m A
I B 2 0.5 / 101 5mA 0
I C 2 0.5m A
VC1 5 0.7 4.3V
VC 2 10 0.5 10 5V
VC1 VB1 0.4V 10 5 (10) 3 0.4 0.4V VC 2 VB 2 0.4V 5 0.4V 4.6V
Q2 in Active mode
Q in Active mode
1
Small Signal Model
Small Signal Model
Small Signal Model
Rin
Rin r 1
Small Signal Model
+
vbe1
+
vbe2
-
-
Rout
vbe1 0
vbe 2 0
Rout RC Vsig 0
Small Signal Model
vo
vo veb2 vbe1
vsig veb2 vbe1 vsig
vo
g m 2 RC
veb2
veb2
g m1re 2
vbe1
vo g m 2 RC g m1re 2 r 1 1 2 RC
vsig
Rsig r 1
Rsig r 1
vbe1
r 1
vsig r 1 Rsig
Problem6-127(f)
Replacing BJT with MOSFET
Small Signal Model
Small Signal Model
Small Signal Model
Rin
Rin
Rout RD Vsig 0
vo
vo vsg 2 vgs1
vsig vsg 2 vgs1 vsig
Rout
vo
g m 2 RD
vsg 2
vsg 2
vgs1
vo
g m 2 RD g m1
g m1RD
vsig
gm2
g m1
gm2
vsg 1 vsig
Rin r 1
Rout RC
vo
1 2 RC
vsig Rsig r 1
vo
2 RC
1
vsig Rsig
1 g m1
Rin
1
Rout RD
vo
g m1 RD
vsig
Problem 6-127(f)
Solution P6-127(f)
+
vbe2
+
veb1
-
Solution P6-127(f)
vb1
Rin
(1 1 )(re1 re 2 )
ib1
Rout RL
+
vbe2
+
vO
vO vbe 2 vi
vsig vbe 2 vi vsig
veb1
+
vi
-
vbe 2
re 2
vi
re1 re 2
vi
Rin
(1 1 )(re1 re 2 )
vsig Rin Rsig (1 1 )(re1 re 2 ) Rsig
Problem 6-127(f) with MOSFET
Solution P6-127(f)
+
vgs2
+
vsg1
-
Solution P6-127(f)
vi
Rin
ig1
+
vgs2
vO
vO vgs 2 vi
vsig vgs 2 vi vsig
+
vsg1
-
ig1=0
+
vi
-
1
gm2
g m1
1
vi
g m1 g m 2
1
g m1
gm2
vgs 2
vi vsig
Comparison BJT/MOSFET Cct
Rin (1 1 )(re1 re2 )
Rout RL
vo
(1 1 ) 2 RL
vsig (1 1 )(2re ) Rsig
1
Rin
Problem 6-123
VBE=0.7 V
β =200
K’n(W/L)=2mA/V2
Vt=1V
Figure P6.123
DC Analysis
Figure P6.123
VBE=0.7 V
β =200
K’n(W/L)=2mA/V2
Vt1=1V
Vt2=25mV
DC Analysis
I D1 I S1 o.1mA,
1mA
I B2 0
W
2
I D1 1 K 'n VGS Vt
2
L
2V
2
0.1 1 2VGS 1 VGS 1.316V
2
IG0.7V
=0
VC 2 V GS V BE 2V
52
I I C 2
1mA
3
I=0.7/6.8=0.1mA
g m1
gm2
2 I D1
0.63m A/ V
VVOV
I C2
40m A/ V , r 2
5k
Vt
gm2
Small Signal Model
Small Signal Model
Small Signal Model : Voltage Gain
vo
v
v
v
o be 2 i
vsig vbe 2 vi vgs1
vo
g m 2 ( RL || RC ) -30V/V
vbe 2
Negelecting effect of RG 10M
ig=0
+
vi
-
+
vbe2
vbe 2
( RS1 ||r 2 )
0.64V / V
1
vi
( RS1 ||r 2 )
g m1
-
vi
Rin
0.83V / V
vsig Rin Rsig
Ri n
v0
( RS1 ||r 2 )
g m 2 ( RL || RC )
16V / V
1
vsig
( RS1 ||r 2 ) Rin Rsi g
g m1
Small Signal Model : Input Resistance
ii
ig=0
+
vi
-
Rin
v0
( RS 1 ||r 2 )
g m 2 ( RL || RC )
19.2V / V
1
vi
( RS1 ||r 2 )
g m1
Small Signal Model : Output Resistance
IRG
Itest
ig=0
+
Vtest = vo
vi
-
Rout
Rout
Vtest
I test
The Miller Theorem.
The Miller equivalent circuit.
Miller Theorem
Z
Z1
1 K
Z2
Z
1
1
K
V1
V1 KV1
1 K
I1
I
V
Z1
Z1
Z
V1
Z
Z1
I1
1 K
0 V2
0 KV1 V1 KV1
I2
I
Z2
Z2
Z
V2
Z
Z2
I2 1 1
K
Miller theorem
• Miller theorem states that impedance Z
can be replaced by two impedances: Z1
connected between node 1 and ground
and Z2 connected between node 2 and
ground where
Z1
Z
1 K
V2
where k
V1
&
Z2
Z
1
1
K
gain function
to obtain the equivalent circuit
Miller theorem
• Miller equivalent circuit is valid only as
long as the rest of the circuit remains
unchanged
• Miller equivalent circuit cannot be used
directly to determine the output resistance
of an amplifier. It is due to the fact for
output impedance test source is required
and thus circuit has a major change.
Circuit for Example 6.7.
Example
Z1 1M
Z
100k
Z1
9.9k
1 K 1 100
Z
Z2
0.99M
1
1
K
VO VO V1
Vsig V1 Vsig
Z1
100
497 V / V
Z1 Rsig
K=-100 V/V, Z = 1 M Ω
OBSERVATIONS
• The Miller replacement for a negative
feedback results in a smaller resistance
[by a factor of (1-K)] at the input.
• The multiplication of a feedback
impedance by a factor (1-k) is referred as
Miller Multiplication or Miller Effect
Small Signal Model
CE with RE includng r0
A CE amplifier with emitter degeneration : Input Resistance
7
2
3
1
4
6
5
A CE amplifier with emitter degeneration : Input Resistance
A CE amplifier with emitter degeneration to determine Avo.
Open Circuit Voltage Gain
Figure 6.49
A CE amplifier with emitter degeneration
to determine Output Resistance
6
7
5
4
3
1
2
Active-loaded common-base amplifier
Figure 6.33
Active-loaded common-base amplifier
to determine Input Resistance
7
4
5
3
6
2
1
Figure 6.33
Active-loaded common-base amplifier
With output open-circuit
6
7
5
4
3
2
1
Figure 6.33
8
A CB amplifier to determine Output Resistance
6
7
5
4
3
1
2
Quiz No 8
DE 28 EE
Quiz No 8
DE 28 EE