Transcript Slide 1 - Oxford University Press

Figure 6.59 Two obvious schemes for biasing the BJT: (a) by fixing VBE; (b) by fixing IB. Both result in wide variations in IC and
hence in VCE and therefore are considered to be “bad.” Neither scheme is recommended.
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Figure 6.60 Classical biasing for BJTs using a single power supply: (a) circuit; (b) circuit with
the voltage divider supplying the base replaced with its Thévenin equivalent.
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Figure 6.62 (a) A common-emitter transistor amplifier biased by a feedback resistor RB. (b) Analysis of the circuit in (a).
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Figure 6.63 (a) A BJT biased using a constant-current source I. (b) Circuit for implementing the current source I.
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Figure 6.64 Basic structure of the circuit used to realize single-stage, discrete-circuit BJT amplifier configurations.
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Figure E6.51
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Figure 6.66 (a) A common-emitter amplifier with an emitter resistance Re. (b) Equivalent circuit obtained by replacing the transistor with its T model.
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Figure 6.67 (a) A common-base amplifier using the structure of Fig. 6.64. (b) Equivalent circuit obtained by
replacing the transistor with its T model.
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Figure 6.68 (a) An emitter-follower circuit based on the structure of Fig. 6.64. (b) Small-signal equivalent circuit
of the emitter follower with the transistor replaced by its T model.
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Figure 6.69 Sketch of the magnitude of the gain of a CE amplifier versus frequency. The graph delineates
the three frequency bands relevant to frequency-response determination.
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Figure 6.70 The BJT common-base characteristics including the transistor breakdown region.
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Figure 6.71 The BJT common-emitter characteristics including the breakdown region.
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