Transcript Processing

Processing
Ryan Rivers
[email protected]
(510) 809-8627
Jeff Clarkson
[email protected]
(510) 809-8628
Kim Chan
[email protected]
(510) 809-8631
July 17th, 2014
Richelieu Hemphill
[email protected]
(510) 809-8615
Marilyn Kushner
[email protected]
(510) 809-8629
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Research Community Commitment
Community
Communication
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Assistance
Awareness
2
Nanolab Engineers
Process and Equipment engineers are here to assist you
Each tool has assigned engineers
Process/Equipment Engineer 1 is in charge of that equipment
Process Engineer 1 approves special processes on equipment
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Plan Your Work !
Time = Money
Some tools are heavily reserved
Plan ahead one week – minimize idle time
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Working in the NanoLab
Nanolab Rule #1:
NEVER WORK ALONE
3rd to last person to leave must go notify the other two!
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Working in the NanoLab
Entrance Checklist:
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
Passed the Safety Quiz
There are no announcements preventing lab access
The HazMat alarm is not active
Have blue shoe covers on
No food or drink on person
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Gowning Procedure: Top Down
Shoe Covers
Enter Gowning
Bouffant Cap
Bunny Suit
Shoe Covers
Gloves
Safety Glasses
Complete
De-gowning occurs in reverse order
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Entering the Lab Area
Gowning Checklist:






No chemicals in storage box
Safety Glasses on
Name tag visible on coverall
Changed damaged or stained coveralls/shoes/other gear
Using proper size coverall and shoe cover
Log on at the computer terminal before entering lab
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Equipment Qualification
Complete
Prerequisite
Requirements
Read the Manual
Get Training
(Any Qualified
Member)
Take Equipment Test
(520 SDH Front
Desk)
Oral Qualification
(Superuser)
When in doubt – ASK STAFF
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Complete Prerequisite Qualifications
• Many equipment sets have prerequisite qualifications and/or classes offered by staff
• Evaporation, SEM, E-beam Litho, and confocal microscopy classes are offered
periodically
• Some toolsets have gateway tools (e.g. msink 6/8, tystar1-4, Leo SEM)
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Read the Manual
All major equipment has a lab manual on website
Process engineers update manual – send any suggestions to us!
Manual inconsistencies are reported on Mercury as process faults
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Training – All qualified can train!
Check reservations for the tool
Find a member
using equipment
E-mail: <membername>@silicon.eecs.berkeley.edu
Request to observe run and get training
Each One Teach One – Train someone at least 1x per semester
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Take Equipment Test
Equipment tests available at 520 SDH (Front Desk)
Usually available online via Mercury
Specific tests are written only – copies at front desk
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Oral Qualification – Superuser Only
Check Mercury for superuser names/email
E-mail: <membername>@silicon.eecs.berkeley.edu
Request qualification. Make reservation with superuser
Sometimes process staff are the only superusers
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Quality Monitoring
• Quality Monitor tracks
processes
• Data is posted monthly
on MercuryWeb
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Quality Monitoring
• Quality monitor reports show valuable data trends
• Reports also show standard process conditions for the monitor
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Material and Process Compatibility
• The Nanolab is a diverse processing environment
• Nanolab materials restrictions are as open as possible
• Many processes are very sensitive (e.g., Sinks/Furnaces)
• Duplicate process capability allows separation of materials
• Materials restrictions are given by tool and group
• Materials restricted by:
• Substrate, Process, and Maintenance
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The Lab Manual
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Ch 1 - Material and Process Compatibility
• Chapter 1.7 – Furnace pre-clean & substrate restrictions
• Equipment manuals define material compatibility/cleaning
• Every piece of equipment has specific material restrictions
• Several equipment may have group contamination protocols
• Specific tools and processes require specific cleaning
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Ch 1 - Material and Process Compatibility
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Ch 2 - Sink Information / Restrictions
Sink Name
(Maximum
Processes Available
Wafer Size)
Marvell
Lab
Locat
ion
Important Comments
msink1 (8")
PR strip, tank develop, pre-furnace
metal clean
382
Note 2
msink2 (6")
PR strip, tank develop
all metals allowed
382
Metal contaminated sink - Note 1
msink3 (8")
Manual Resist Processing
382
msink4 (6")
TMAH & KOH etch
382
Staff Review required before wafers processed at
this sink returning to msink6, msink7, msink8.
msink5 (8")
HF, BHF etch
special project etch
(check labels at tanks)
382
Metal contaminated sink, PR coated wafers allowedsee Note 1
msink6 (8")
Final Piranha - MOS clean sink
386
No metals allowed
- MOS clean sink
msink7 (6")
Hot phosphoric,
HF, silicon etch
386
No metals, PR coated wafers allowed
msink8 (8")
Piranha clean,
BHF, aluminum etch
386
No metals except aluminum in the aluminum etch
tank, no PR coated wafers
msink16 (N/A)
General clean - beaker process/part clean
582A
Metal contaminated sink - Note 1
msink18 (N/A)
General clean - beaker process/part clean
582A
Metal contaminated sink - Note 1
Note 1 Note 2 -
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Wafers processed at this sink are metal contaminated, ARE NOT ALLOWED to return to msink6, msink7, msink8.
Gold, copper and or other highly diffusive metals ARE NOT ALLOWED at this sink.
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Ch 2 - Working at the Sinks
• PPE must be worn when working at the sinks!
• Chemically resistant gloves
• Face shield
• Chemically resistant apron
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Ch 2 - Working at the Sinks
• Mixing chemistry can get HOT!
• Always use caution when adding chemicals and be aware
of exothermic reactions
• Working at general purpose sinks (MSink16/18)
• You MUST be qualified
• Describe your processes to each other
• Process Tag all work at the station
• Do not heat up a solvent directly on the heater chuck
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Ch 2 - General Wet Chemistry
Cabinets
• Located in 582A, 381/383
• Standard chemicals available to members at no charge
• Special chemical storage needs pre-approval and label
• Use partial bottles first!
If empty – ask staff to restock
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Ch 2 - Changing Organic Bottles
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Ch 2 - Chemical Waste Management
Log Sheet
Every pour requires an entry with a volume!
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Ch 3 - Mask Making at MNL
MNL provides in-house mask making
• L-Edit Layout Software
• GCA 3600 Pattern Generator
• Refer to MNL Chapter 3 for complete details
• Contact Process Engineer Jeff Clarkson for assistance
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Ch 4 - Photolithography Equipment
GCA 8500 5X i-Line Stepper
Typical Resolution: 0.8 um
Minimum Resolution: 0.6 um
PE1: Jeff Clarkson
EE1: Greg Mullins
ASML 5500/300 4X DUV Stepper
Typical Resolution: 0.35 um
Minimum Resolution: 0.25 um
PE1: Jeff Clarkson
EE1: Greg Mullins
Crestec CABL 9510 E-Beam
Typical Resolution: 40 nm
Minimum Resolution :10 nm
PE1: Kim Chan
EE1: Greg Mullins
Quintel Q4000 Mask Aligner
Typical Resolution: 2.5 um
Minimum Resolution: 1.0 um
PE1: Kim Chan
EE1: Greg Mullins
Karl Suss MA6 Mask Aligner
Typical Resolution: 2.5 um
Minimum Resolution: 1.0 um
PE1: Kim Chan
EE1: Greg Mullins
Canon 4X Projection MA
Typical Resolution: 1.5 um
Minimum Resolution: 1.0 um
PE1: Kim Chan
EE1: Greg Mullins
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Ch 5 - Furnaces – AP and LPCVD
Tystar 1-4, Dry/Wet Ox,
Anneal, Sinter, 4” & 6”
wafers
Tystar 17-20, Nitride,
Hi-Temp Oxide, Sinter, SiGe, 4” & 6” wafers
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Tystar 5-7, Dry/Wet Ox,
Dopant Diffusion, Anneal, 4”,
6” & 8” wafers
Tystar 9-12, Nitride,
poly-Si, a-Si, Low-Temp
Oxide, 4” & 6” wafers
Tystar 13-16, Dopant
Diffusion, SiC, poly-Si, a-Si,
4” & 6” wafers
1. Furnaces are divided into MOS & non-MOS.
2. Substrates must be cleaned before furnace use.
Last pre-furnace step:
Msink6 for non-metal substrates, and,
Msink1 for metal substrates going into
metal approved furnaces.
3. III-V compounds are not allowed in any furnace.
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Ch 5 - Rapid Thermal Processors
RTP1 – III-V, PZT, metals; up to 6” wafers
RTP2 – III-V; process up to 6” wafers
RTP3 – Si non-MOS, metals; up to 6” wafers
RTP4 – Si MOS, silicidation; up to 6” wafers
Rapid Thermal Processing has time
scales on the order of seconds to
reach up to 1100ºC. Applications
include thermal oxidation, anneal,
dopant activation and metal reflow.
RTP8 – Si MOS Gate Oxidation;
Process up to 8” wafers
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Ch 6 - Thin Film Deposition – PECVD/HFCVD
System Name
Power Type
Temp
Materials
oxford2
RF Plasma
100-350C
a-Si, SixNy, SiO2
pqecr
ECR Plasma
25-300C
Al, Cr, Cu, Fe*, ITO, Ni*, SiO2, Ti, W
sp3
Hot Filament
700C
Diamond
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Ch 6 - Thin Film Deposition – ALD
System Name
ALD type
Temp
Materials
cambridge
RF Plasma/Thermal
100-500C
Al2O3, TiO2, ZrO2, TiN, Ru, SiO2
picosun
Thermal
160-300C
Al2O3, TiO2
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Ch 6 - Thin Film Dep – PVD Sputter
System Name
Type
Porous
Reactive
Targets
User Changed?
Materials
mrc944
RF
Magnetron
No
No
4
N
Al/2%Si, Al/Mn, Ni, NiV, W,
Ti
edwards
RF/DC
Magnetron
Yes
Yes
3
Y
Al, Cr, Cu, Fe*, ITO, Ni*,
SiO2, Ti, W
randex
DC Diode
Yes
Yes
2
N
gartek
DC
Magnetron
No
No
3
N
Al, Nb
aln2
AC/DC
Magnetron
No
Yes
4
N
Mo, AlN, Al
Topgun
DC
Magnetron
No
Yes
4
N
Al, Cu, Si, Ti
All PVD tools require use of light blue “vacuum” gloves
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Ch 6 - Thin Film Dep – PVD Evaporation
System Name
Type
Temp
Porous
Dielectrics
Magnetics
Sources
Materials
cha
E-beam
High
Yes
No
No
6
Ag, Al, Au, Cr, Cu, Nb, Pd,
Pt, Sn, Ti
tescal
Thermal
High
Yes
No
Yes
3
Ag, Al, Au, Cr, Nb, Pd, Pt,
Ir, Ru
nrc
Thermal
Low-High
Yes
No (TBD)
Yes
2
Ag, Al, Au, Co, Cr, Cu, Fe,
In, Ni, Pd, Pt, Si, Sn, Ti,
ITO, TCO
ultek
E-beam
High
No
No
No
3
Al, Au, Cr, Cu, Pd, Pt, Ti
edwardseb3
E-beam
Mid-High
No
Yes
No
4
Ag, Al, Mn, Mg, Si, SiO2
dw
E-beam
Low-High
No
Yes
No
4
Ag, Al, Mn, Zn
Evaporators require Evaporation Training Workshop Qualification
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Ch 7 – Etching Systems – Plasma
System Name
Type
Chemistry
He cooling
Materials Group
Lam6
RIE
Fluorine
Yes
SiN, SiO2, BARC
Lam7
TCP/Bias
Cl2/BCl3
Yes
Al, Ti
Lam8
TCP/Bias
HBr/Cl2
Yes
Silicon, SiC, SiGe
Technics-c
RIE
SF6/He
No
SiN, SiO2, Si
Centura-3-5
ICP/Bias
Various, Cl2
Yes
III-V Nitrides
Centura-met
ICP/Bias
Cl2/BCl3
Yes
Al, Ti, W
Centura-mxp
RIE
CF4/CHF3/CH3F
Yes
SiN, SiO2
Matrix-etch
RIE
CF4/SF6/O2
No
Si, SiN, SiO2, Mo
Semi
RIE
CF4/O2
No
Nb, SiO2
Ptherm
RIE
Various
No
Various
Sts2
DRIE
SF6/O2, C4F8
Yes
Si
Sts-oxide
DRIE
C4F8, H2
Yes
SiO2
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Ch 7 – Etching Systems – Other
System Name
Type
Chemistry
Materials Group
Primaxx
Vapor
Anhydrous HF
SiO2
Xetch
Vapor
XeF2
Si
Ionmill
Ion Mill
Physical Ar Sputter
Various
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Ch 8 -Testing and Inspection Equipment
MNL has a wide range of test and inspection equipment. See Chapter 8 in the MNL Manual for a complete list. Contact MNL
Process Engineer Jeff Clarkson for assistance.
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Thank You
for your attention!
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