Transcript Dynamic Logic Circuits - VLSI

CMOS Digital Integrated Circuits
Lec 12
Dynamic Logic Circuits
1
CMOS Digital Integrated Circuits
Dynamic Logic Circuits

Goals
Understand
•
•
•
•
•
2
Pass transistors circuits
Voltage bootstrapping
Synchronous dynamic circuit techniques
Dynamic CMOS circuit techniques
High-performance dynamic CMOS circuits
CMOS Digital Integrated Circuits
Static v.s. Dynamic

Static Logic Gates
• Valid logic levels are steady-state operating points
• Outputs are generated in response to input voltage levels after a
certain time delay, and it can preserve its output levels as long as
there is power.
• All gate output nodes have a conducting path to VDD or GND,
except when input changes are occurring.

Dynamic Logic Gates
• The operation depends on temporary storage of charge in parasitic
node capacitances.
• The stored charge does not remain indefinitely, so must be
updated or refreshed. This requires establishment of an update or
recharge path to the capacitance frequently enough to preserve
valid voltage levels.
3
CMOS Digital Integrated Circuits
Static v.s. Dynamic (Continued)

Advantages of Dynamic Logic Gates
• Allow implementation of simple sequential circuits with memory
functions.
• Use of common clock signals throughout the system enables the
synchronization of various circuit blocks.
• Implementation of complex circuits requires a smaller silicon area
than static circuits.
• Often consumes less dynamic power than static designs, due to
smaller parasitic capacitances.
4
CMOS Digital Integrated Circuits
Pass-Transistor Latch
Circuit and Operation
Soft note
D
MP
ML Q
Vx
Q
X
Cx
MD
CK

Operation
• CK = H, D=H or L : CX is charged up or down through MP, and X
becomes H or L (depends on D input) since MP is on  D and X
are connected.
• CK = L: X is unchanged since MP is off and CX is isolated from D,
and the charge is stored on capacitances CX.
• For X = H, Q = L and Q = H
• For X = L, Q = H and Q = L

5
Cost: 3 to 5 devices (very low)
CMOS Digital Integrated Circuits
Pass-Transistor Latch
Soft Node Concept
• During CK = 1: Let D = 1, i.e. VD = VOH = VDD MP is conducting
and charges CX to a “weak 1” (VX = VDD – VTD)  Q = L
(VQ<VTD) and Q = H(VQ=VDD).
• During CK = 0: Logic-level VX is preserved through charge storage
on CX. However, VX starts to drop due to leakage.
• What value does VX have to deteriorate to no longer like a stored ?
Example (see p359~359, Kang and Leblebici): For an inverter
with VDD = 5V, VT,n = 0.8V , VOL = 2.9V and VIH = 2.9V, initial VX
=4.2 V. But due to leakage currents, this will decline over time.
When it declines below VIH(2.9V), then a logic 0 out of the
inverter can no longer guaranteed.
Thus, to avoid an erroneous output, the charge stored in CX must
be restored or refreshed to its original level before VX declines
below 2.9 V.
6
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Logic “1” Transfer

Logic “1” Transfer: VX(t=0)=0V, Vin=VOH=VDD, CK=0 VDD
Soft note
Vin
MP
Vx
X

Vin=VDD D
S
MP
Vx
X
Cx
Cx
CK
ID
CK
• VGS = VDD - VX, VDS = VDD - VX = VGS.
• Therefore, VDS> VGS – VT,MP MP is in saturation.
2
dV X  k n


V DD V X V T ,MP
CX
dt
2
• Note that the VT,MP is subject to substrate bias effect and therefore,
depends on the voltage level VX. We will neglect the substrate bias
effect for simplicity.
7
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Logic “1” Transfer (Cont.)
• Integrating the above equation with t from 0  t and VX from 0 
VX, we have
t
2C X
dt

0
kn
VX
dV X
0 V  V  V 2
DD
X
T , MP
VX
• Therefore,
1
 2C X
k n V DD  V X  V T ,MP 0

1
1
2
C
X 


t

k n  V DD  V X  V T ,MP V DD  V T ,MP 
• and,
8
k n V DD  V T ,MP  t
2C X
V X (t )  V DD  V T ,MP 
 

1  k n V DD V T ,MP t
2C X
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Logic “1” Transfer (Cont.)
VX
Vmax
Vmax=VDD-VT,MP
t
0
• VX rises from 0V and approaches a limit value Vmax = VX(t)|t= = VDDVT,MP, but it can not exceed this value, since the pass transistor will turn
off at this point (VGS=VT,MP). Therefore, it transfers a “weak logic 1”.
• The actual Vmax by taking the body effect into account is,
V max  V DD  V T 0,MP  

2 F  V max  2 F

• and tcharge = time to VX = 0.9Vmax,

1
1
2C X 


tcharge k n  V DD  0.9V max  V T ,MP V DD  V T ,MP 
• Body Effect: Reduce VX, and Increase tcharge
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CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Logic “0” Transfer

Logic “0” Transfer: VX(t=0)=Vmax= VDD – VT,MP, Vin=VOL=0V,
CK= 0  VDD
Soft note
Vin
MP

Vx
X
Vin=0
S
D
MP
Vx
X
Cx
Cx
CK
ID
CK
• VGS = VDD, VDS = Vmax = VDD – VT,MP.
• Therefore, VDSVGS – VT,MP MP is in linear region.
dV X  k n 2
2
 CX
V DD  V T ,MP V X  V X 
dt
2
• Note that the VSB=0. Hence, there is no body effect for MP
(VT,MP= VT0,MP). But the initial condition VX(t=0)=VDD – VT,MP
contains the threshold voltage with body effect. To simplify the
expressions, we will use VT,MP in the following.
10
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Logic “0” Transfer (Cont.)
• Integrating the above equation with t from 0  t and VX from
VT,MP  VX, we have
t
VX
2C X
dV X
dt

0

2
k n V DDV T , MP 2V DD  V T ,MP V X  V X 
  2V DD  V T ,MP   V X 
CX

ln 


k n V DD  V T ,MP   
VX

• Therefore,
VX
V DD V T , MP
 2V DD  V T ,MP   V X 
C
X
t
ln 

k n V DD  V T ,MP  
VX

• and,
V X (t ) 
11
2V DD  V T ,MP 
tk n V DD V T , MP  /C X
1 e
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Logic “0” Transfer (Cont.)
• VX drops from Vmax = VDD-VT,MP, to 0V. Hence, unlike the chargeup case, it transfers a “strong logic 0”.
• fall = time of VX drops from 0.9Vmax to 0.1Vmax,
 fall  t 90%  t10%
CX
ln( 19)  ln( 1.22) VX
k n V DD  V T ,MP 
Vmax
CX
 2.74
k n V DD  V T ,MP 
• where,

t 90% 
12
 2  0.9 V DD  V T ,MP  
CX

ln 
k n V DD  V T ,MP   0.9 V DD  V T ,MP  

CX
ln 1.22 
k n V DD  V T ,MP 
t10% 
 1.9 
CX
ln 

k n V DD  V T ,MP   0.1 
Vmax=VDD-VT,MP
t
0
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage
• At t = 0, CK=0, VX= Vmax, Vin =0. The charge stored in CX will
gradually leak away, primarily due to the leakage currents
associated with the pass transistor. The gate current of the inverter
driver transistor is negligible.
Vin =0
MP
Ileakage Vx Igate=0
Cx
CK=0
VCK=0
Ileakage
VX
Vin=0
n+
Isubthreshol
n+
CX
d
p-type Si
13
Ireverse
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage (Cont.)
VCK=0
Ileakage VX
Vin=0
n+
Isubthreshold
Ireverse
p-type Si
Ileakage= Isubthreshold + Ireverse
Ileakage
Isubthreshold
CX
n+
Vx
Cj(VX)
Ireverse
Cin= Cgb + Cpoly + Cmetal
Cin
CX= Cin + Cj
Drain-substrate pn-junction
•
•
•
•
14
Isubthreshold is the subthreshold current for the pass transistor with CK=0.
Ireverse is the reverse current for the source/drain pn junction at node X
Cj (VX) : due to the reverse biased drain-substrate junction, a function of VX
Cin: due to oxide-related parasitics, can be considered constants.
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage (Cont.)
Ileakage= Isubthreshold + Ireverse
Ileakage
Vx
Cin= Cgb + Cpoly + Cmetal
Isubthreshold
Ireverse
Cj
Cin
CX= Cin + Cj
Drain-substrate pn-junction
• The total charge stored in the soft node can be expressed as,
Q = Qj (VX) + Qin where Qin = Cin•VX
• The total leakage current can be expressed as the time derivative
of the total soft-node charge Q
I leakage 

dQ
dt
dQ j (V X )

dQin
dt
dt
dQ j (V X ) dV X
dV X

 C in
dt
dt
dV X
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CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage (Cont.)
• Where
dQ j (V X )
dV X
 C j (V X )

AC j 0
AC j 0 SW

1 V X
1 V X
0
0 
• Therefore,
kT  N D N A 
ln 

q  ni2 
 0 SW
 0 SW 
kT  N D N ASW 
ln 

2
q 
ni





 AC j 0

PC j 0 SW

 C in  dV X
I leakage  
dt
VX
 1 V X

1



0
 0 SW


• We have to solve the above differential equation to estimate the
actual charge leakage time from the soft node.
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CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage (Cont.)

A quick estimate of the worst-case leakage behavior
• Assume that the minimum combined soft-node capacitance is
CX,min = Cgb + Cpoly + Cmental + Cdb,min
Cdb,min is the minimum junction capacitance, obtained when
VX=Vmax
• The worst-case holding time (thold) is the shortest time for VX to
drop from its initial logic-high value to the logic threshold voltage
due to leakage.
thold = Qcritical,min/Ileakage,max
Vth
• where
Qcritical,min =CX,min (Vmax-VDD/2)
17
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage (Cont.)

Example 9.2: Consider the soft-node structure shown below, which
consists of the drain (or source, depending on current direction) terminal of
the pass transistor, connected to the polysilicon gate of an nMOS driver
transistor via a metal interconnect.
Question: is to estimate thold if VDD=5V and the soft-node is initially
charged to Vmax.
Vx
MP
M1
Cx
CK
soft node
3
1
MP 4
1
6
CK
diffusion
18
5
6
2
5
M1
2
3
2
4 1
metal polysilicon
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage (Cont.)
• Material parameters:
VTO = 0.8V
 = 0.4V1/2
|2F| = 0.6V
0 = 0.88V
0SW = 0.95V
Ileakage,max = 0.85 pA
COX = 0.065 fF/m2
C’metal = 0.036 fF/ m2
C’poly = 0.055 fF/ m2
Cj0 = 0.095 fF/ m2
Cj0SW = 0.2 fF/m
3
1
MP 4
1
6
5
6
2
5
diffusion metal polysilicon
Soft-node Capacitance Calculation
CK
M1
2
3
4 1
• Oxide-related (constant) parasitic capacitances
» Cgb = COX·W·Lmask = 0.065 fF/m2· (4 m2 m) = 0.52 fF
» Cmetal = C’metal·W·Lmetal = 0.036 fF/m2· (5 m5 m) = 0.90 fF
» Cploy = C’poly·W·Lpoly = 0.055 fF/m2· (36+6+2 m2) = 2.42 fF
19
CMOS Digital Integrated Circuits
2
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage (Cont.)
• Parasitic junction capacitance
By zero-bias unit capacitance values in the previous slide, we have
» Cbottom = Abottom·Cj0 = 0.095 fF/m2· (36 m2 + 12 m2 ) = 4.56 fF
» Csidewall = Cj0SW·Psidewall = 0.2 fF/m2· (30 m) = 6.00 fF
Therefore
» Cdb,max = Cbottom + Csidewall = 4.56 fF + 6.00 fF = 10.56 fF
The minimum drain junction capacitance is achieved as the junction
is biased with Vmax. We need to find Vmax to determine Cdb,min
» Vmax = 5.0 - 8.0 - 0.4 ( 0.6+ Vmax - 0.6 )
 Vmax = 3.68 V
C bottom
C sidewall

Therefore,
C db,min 
1  V X ,max
0

20
1  V X ,max
 0 SW
4.56
6.0

 4.71 fF
3.68
3.68
1
1
0.88
0.95
CMOS Digital Integrated Circuits
Basic Principles of Pass Transistor Circuits
Charge Storage and Charge Leakage (Cont.)
• Combining the Oxide-related (constant) parasitic capacitances with the
parasitic junction capacitance, CX,min can be got as
CX,min = Cgb + Cpoly + Cmental + Cdb,min
= 0.52 + 2.42 + 0.90 +4.71 = 8.55 fF
• The amount of the critical charge drop is
Qcritical = CX,min(VX,min-VDD/2)=8.55 (3.68-2.5)=10.09 fC
• Finally,
thold =  Qcritical /Ileakage,max=11.87ms
• The worst-case hold time for this structure is relatively long, even with
a very small soft-node capacitance of 8.55fF. It means that the logic
gate can be preserved in a soft node for a long time period when the
leakage current is small.
21
CMOS Digital Integrated Circuits
Voltage Bootstrapping
• The Voltage bootstrapping is a technique to overcome the threshold
voltage drops of the output voltage levels in pass transistor gates or
enhancement-load inverters and logic gates.
• Consider the following circuit with VXVDD  M2 is in saturation. If
Vin is low, the maximum output voltage is limited as
Vout(max) = VX – VT2(Vout)
VDD
Vx
M2
Vout
Vin
22
M1
Cout
CMOS Digital Integrated Circuits
Voltage Bootstrapping (Cont.)
• To overcome the voltage drop, the voltage VX must be increased. This
can be achieved by adding a third transistor M3 into the circuit.
» CS and Cboot represent the capacitances which dynamically couple
VX to the ground and to the output.
» The goal of the above circuit is to provide a high enough voltage
VX to let Vout go to VDD instead of VDD-VT2(Vout).
VDD
M3
Vx
CS
M2
Cboot Vout
Vin
M1
Cout
• Initially, let Vin=H M1 and M2 are on, and Vout=L.
• Now Vin goes to L  M1 turns off, and Vout starts to rise. This change
will be coupled to VX through the bootstrap capacitor, Cboot.
23
CMOS Digital Integrated Circuits
Voltage Bootstrapping (Cont.)
• Let iCboot be the transient current through Cboot during the charge-up event,
and let iCS be the current through CS. Assume iCS  iCboot, we have
iCS  iCboot
CS·dVX/dt  Cboot·d(Vout-VX)/dt
 (CS+Cboot)·dVX/dt  Cboot·dVout/dt

dVX/dt  Cboot /(CS+Cboot) ·dVout/dt
• This expression can be integrated to give VX such that Vout will rise to VDD.
VX
V DD
C boot
V DDV T 3 dV X  C S  C boot V OL dV out
C boot
V DD  V OL 
C S  C boot
• If Cboot >> CS, then for Vout rising to VDD,
VX(max)  2VDD – VT3 – VOL > VDD – VT2.
for realistic values of the voltages. Thus, it is feasible to use the circuit to
obtain Vout =VDD.
.
24
 V X  V DD  V T 3 
CMOS Digital Integrated Circuits
Voltage Bootstrapping (Cont.)
• To overcome the threshold voltage drop at Vout, the minimum VX is
VX(min) = VDD + VT2|Vout = VDD
= [VDD-VT3(VX)]+Cboot /(CS+Cboot) ·(VDD-VOL)
• Therefore, the required capacitance ratio Cboot /(CS+Cboot) is
V T 2 VoutVDD  V T 3 VX
C boot

C S  C boot
V DD  V OL
.
V T 2 VoutVDD  V T 3 VX
C boot

C S V DD  V OL  V T 2 VoutVDD  V T 3 VX
• CS is the sum of the parasitic source-to-substrate capacitance of M3 and the
gate-to-substrate capacitance of M2.
25
CMOS Digital Integrated Circuits
Voltage Bootstrapping (Cont.)
• Cboot can be specifically constructed to control its value by using a
transistor with the source and drain connected together at Vout and the gate
attached to VX. Since its drain and source tied together, it simply acts as an
MOS capacitor between VX and Vout.
VDD
M3
Vx
M2
Cboot
Vout
Vin
M1
• See Kang and Leblebici at pp. 373 for a SPICE example.
26
CMOS Digital Integrated Circuits
Synchronous Dynamic Circuit Techniques –
Dynamic Pass Transistor Circuits
• The multi-stage synchronous circuit is shown below. The circuit consists
of cascaded combinational logic stages interconnected through nMOS
pass transistors. Its operation depends on temporary charge storage in the
parasitic input capacitances.
Comb.
Logic
1
A
B
1
Comb.
Logic
2
2
C
D
Comb.
Logic
3
F1
F2
1
1
2
t
phase1
phase2
t
1,2 non-overlapping clocks
• Logic levels are stored on input capacitances during the inactive clock
phase.
27
CMOS Digital Integrated Circuits
Dynamic Pass Transistor Circuits
Two-Phase Clock Dynamic Shift Register

Depletion-Load Dynamic Shift Register
• The max clock frequency is determined by signal propagation delay
through one inverter stage.
• One half-period of the clock signal must be long enough to allow Cin to
charge up or down, and Cout to charge to the new value.
• The logic-high input value is one VT0 lower than VDD.
VDD
1
VDD
2
VDD
1
Vout
Vin
Cin1
28
Cout1
Cin2
Cout2
Cin3
Cout3
CMOS Digital Integrated Circuits
Dynamic Pass Transistor Circuits
Enhancement-Load Dynamic Shift Register

Enhancement-Load Dynamic Shift Register 1
• Instead of biasing load transistors with a constant gate voltage, a clock
signal is applied to the gate of the load transistor  power dissipation
and silicon area are reduced.
• The power supply current flows only when the load devices are activated
by the clock signal, the power consumption is lower than the depletionload nMOS logic.
VDD
1
VDD
2
1
VDD
2
Vout
Vin
Cin1
29
Cout1
Cin2
Cout2
Cin3
Cout3
CMOS Digital Integrated Circuits
Enhancement-Load Dynamic Shift Register 1 (Cont.)
General Structure
VDD
VDD
2
1
1
Z
A
B
C
nMOS
Logic
Stage 1
D
nMOS
Logic
Stage 2
General Circuit Structure of Ratioed Synchronous Dynamic Circuit
30
CMOS Digital Integrated Circuits
Enhancement-Load Dynamic Shift Register 1 (Cont.)
VDD
1=H
VDD
2
1
1
VDD
2
Vout1
Vout2
Vout3
Vin
Cout1
Cin1
1
VDD
2=H
Cin2
Cout2
Vout2VOL
VDD
2
1
Cin3
Cout3
VDD
2
Vout1
Vout2
Vout3
Vin
Cin1
Cout1
Cin2
Cout2
Vout1VOL
Cin3
Cout3
Vout3VOL
• VOL → kdriver/kload Ratioed Dynamic Logic.
• Cout1, Cin2 & Cout2, Cin3 interact  Charge Sharing
31
CMOS Digital Integrated Circuits
Enhancement-Load Dynamic Shift Register 2

Enhancement-Load Dynamic Shift Register 2
• The input pass transistor and the load transistor are driven by the same
clock phase.
• The valid low-output voltage level VOL=0V can be achieved regardless of
the driver-to-load ratio, this circuit is a ratioless dynamic logic.
VDD
1
VDD
2
1
VDD
Vout
Vin
Cin1
32
Cout1
Cin2
Cout2
Cin3
Cout3
CMOS Digital Integrated Circuits
Enhancement-Load Dynamic Shift Register 2(Cont.)
General Structure
1
VDD
VDD
2
Z
A
B
C
nMOS
Logic
Stage 1
D
nMOS
Logic
Stage 2
General Circuit Structure of Ratioless Synchronous Dynamic Circuit
33
CMOS Digital Integrated Circuits
Enhancement-Load Dynamic Shift Register 2 (Cont.)
1=H
VDD
VDD
2
1
Vout1
VDD
1
Vout2
Vout3
Vin
Cin1
1
Cout1
Cin2
Vout1VOL
VDD
2=H
Cin3
Cout2
Vout3VOL
VDD
Vout2 0V
VDD
2
1
Vout1
Cout3
Vout2
Vout3
Vin
Cin1
Cout1
Vout10V
Cin2
Cin3
Cout2
Vout2VOL
Cout3
Vout30V
• VOL → 0V Ratioless Dynamic Logic.
• Cini << Couti-1 for i=2,3  Minimum Charge Sharing
34
CMOS Digital Integrated Circuits
Enhancement-Load Dynamic Shift Register 2 (Cont.)
Charge Sharing
2
Vb
Va
Cout1
Cin2
Charge Sharing
• 2 = 0: Qout1 = Cout1Vb and Qin2 = Cin2Va
• 2 = 1: Qtotal = Cout1Vb + Cin2Va and Ctotal = Cout1 + Cin2
The resulting voltage across Ctotal is
VR = Qtotal / Ctotal = (Cout1Vb + Cin2Va )/ (Cout1 + Cin2)
• If Vb = VDD and Va << Vb  VR  Cout1VDD /(Cout1 + Cin2)
VR  VDD if Cin2 << Cout1
35
CMOS Digital Integrated Circuits
Dynamic CMOS Transmission Gate Logic
• Each transmission gate is controlled by the clock signal and its
complement. Therefore, the two-phase clocking need four clock signals.
• As in the nMOS structures, the CMOS dynamic circuit relies on charge
storage in parasitic input capacitances during the inactive clock cycles.
1
2
1
A
B
F1
Stage 1
C
Stage 2
D
1
1
36
2
CMOS Digital Integrated Circuits
Dynamic CMOS Transmission Gate Logic
Shift Register
• The basic building block of the shift register consists of a CMOS
inverter, which is driven by a TG.
• CK=1Vin is transferred onto the parasitic input capacitance CX.
• The low on-resistance of TG results in
» A smaller transfer time compared to nMOS-only switches.
» No threshold voltage drop across TG
soft node
VDD
CK
VX
Vin
CK
37
CX
Vout
Cy
CMOS Digital Integrated Circuits
Dynamic CMOS Transmission Gate Logic
Shift Register (Cont.)
• The single-phase CMOS shift register is built by
» Cascading identical inverter units
» Driving each stage alternately with the CK and CK.
• Ideally: The odd-numbered stages are on as CK=1, while the evennumbered stages are off  the cascaded inverter stages are
alternately isolated.
• Practically:
» The CK and CK are not a truly nonoverlapping signal pair,
since their waveforms have finite rise and fall times.
» One of the signals is generated by inverting the other  the
clock skew is unavoidable.
» True two-phase clocking is preferred over single-phase
clocking.
CK
CK
V1
V2
CK
38
CK
V3
CK
V4
CK
CMOS Digital Integrated Circuits
Dynamic CMOS Precharge-Evaluate Logic
Reduced Transistor Count
VDD

Mp
Vout
C
inputs
nMOS
Logic
Internal
capacitance
Me

• =0  C precharges to
VDD (output is not available
during precharge)
•  =1  C selectively
discharges to 0 (output is
only available after
discharge is complete)
evaluate
t
Vout
precharge
precharge
t
39
CMOS Digital Integrated Circuits
Dynamic CMOS Precharge-Evaluate Logic
An Example
VDD

Mp
Vout
A1
B1
A2
B2
A3
Me
Z is high when =0
Z=(A1 A2A3 +B1B2)
40
CMOS Digital Integrated Circuits
Dynamic CMOS Precharge-Evaluate Logic
Advantages/Disadvantages

Advantages
•
•
•
•
•

Need only N+2 transistors to implement a N-input gate.
Low static power dissipation
No DC current paths to place constraints on device sizing
Input capacitance is same as pseudo nMOS gate.
Pull-up time is improved by active switch to VDD.
Disadvantages
• The available time of output is less than 50 % of the time.
• Pull-down time is degraded due to series active switch to 0.
• Logic output value can be degraded due to charge sharing with other gate
capacitances connected to the output.
• Minimum clock rate determined by leakage on C.
• Maximum clock rate determined by circuit delays.
• Input can only change during the precharge phase. Inputs must be stable
during evaluation; otherwise an incorrect value on an input could
erroneously discharge the output node. (single phase P-E logic gates can
not be cascaded)
• Outputs must be stored during precharge, if they are required during the
next evaluate phase.
41
CMOS Digital Integrated Circuits
Dynamic CMOS Precharge-Evaluate Logic
Cascading Problem
VDD
VDD
Mp1

Mp2
Vout2
Vout1
inputs
1st stage
nMOS
Logic
Me1
2nd

precharge evaluate
Vout
1
Me2
Vout
t
Vout1 does not switch from
“1” to “0” fast enough
t
correct state
erroneous state
t
• Evaluate:
» Me1, Me2  ON
» Mp1, Me2  OFF
• Problem: All stages must evaluate simultaneously one clock does
not permit pipelining of stages.
42
CMOS Digital Integrated Circuits
High Performance Dynamic CMOS Circuits
Domino CMOS Logic
VDD
VDD
Static inverter serves to buffer the
logic part of the circuit from its
output load

X
inputs
Vout
nMOS
Logic
• =0
» X precharges to VDD, and Vout = 0.
• =1
» X remains high, and Vout remains
low.
» X discharges to 0, and Vout
changes from 0 to 1.
 precharge evaluate
1
t
43
CMOS Digital Integrated Circuits
Domino CMOS Logic
VDD
VDD
VDD

X1
inputs

nMOS
Logic
evaluate
X2
nMOS
Logic
X3
nMOS
Logic
evaluate
precharge
teval
t
X1
X2
X3
t
t
Max number gates limited:
total propagation delay < teval
t
44
CMOS Digital Integrated Circuits
Domino CMOS Logic (Cont.)
VDD
VDD
VDD

X1
inputs
nMOS
Logic
X3
X2
nMOS
Logic
nMOS
Logic
• The problem in cascading conventional dynamic CMOS occurs
when one or more inputs make a 1 to 0 transition during evaluation.
• Domino circuits can fix the above problem
» During the evaluation, each buffer output can make at most one
transition (from 0 to 1), and thus each input of all subsequent
logic stages can also make at most one (0 to 1) transition.
45
CMOS Digital Integrated Circuits
Domino CMOS Logic
The Limitations
• The static CMOS and domino gates can be used together, see Fig.
9.31. in Kang and Leblebici. The limitation: the number of
inverting static logic stages in cascade must be even, to let the
inputs of next domino stage can have only 0 to 1 transitions during
the evaluation.
• Can implement only non-inverting logic
• Due to precharge use, can suffer from charge sharing during the
evaluation which may cause erroneous outputs.
» The problem will be described in the next slide, and several
solutions will be presented later.
46
CMOS Digital Integrated Circuits
Domino CMOS Logic
Charge Sharing
VDD
VDD

VX
Vout
C1
N
C2
VX = VDDC1/(C1+C2)
Keep C2 << C1
• Assume that all inputs are low initially, and the voltage across C2=0V
• During the precharge, C1 is charged to VDD
• If transistor N switches from 0 to 1 during the evaluation phase, the
charge initially stored in C1 will be shared by C2. Therefore, the value
of VX will reduced.
47
CMOS Digital Integrated Circuits
Domino CMOS Logic
Reduce Charge Sharing Degradation of VX
VDD
weak pull-up pMOS

VX
inputs
48
nMOS
Logic
Vout
Push VX to VDD unless there
is a strong pull-down path
between Vout and ground
CMOS Digital Integrated Circuits
Domino CMOS Logic
Reduce Charge Sharing Degradation of VX (Cont.)
VDD
•

VX1
nMOS
Logic
Vout1
C1
Vout2 •
VX2
nMOS
Logic
•
C2
•
Use separate pMOS transistors to
precharge all intermediate nodes in
nMOS pull-down tree which have a
large parasitic capacitance.
Effectively eliminate all charge
sharing problems during evaluation
Allow implementation of multipleoutput domino structures.
Can cause additional delay since the
nMOS tree need to drain a larger
charge to pull down VX
Another Way: Use a smaller threshold voltage
 the final stage output is not affected by lowering of VX
trade off the pull-up speed (weaker pMOS transistor)
49
CMOS Digital Integrated Circuits
Domino CMOS Logic
An Example of Using Separate pMOS Transistor
VDD
VDD
VDD

VX1
Vout
VA
VB
50
C1
VX2
C2
• Let C1 = C2 = 0.05pF. VX1 = 0, and VX2 = 0 at t=0
• Without this extra pMOS transistor
» Precharge: VX1 ≠VX2
» Evaluation: VX1 = VDDC1/(C1+C2) = VDD/2
• With this extra pMOS transistor
» Presharge: VX1 = VX2
» Evaluation: VX1 = VDD
• See pp.392~393 for the HSPICE simulation result
• Note that there is a speed penalty for adding this
extra pMOS precharge transistor.
CMOS Digital Integrated Circuits
Domino CMOS Logic
An Example of Multiple-Output Domino Circuits
VDD

C4
P4
P3
G4
C3
G3
C2
P2
G2
C1
P1
G1
C0
Reduce transistor count
•
•
•
•
51
C1=G1+P1C0
C2=G2+P2G1+P2P1C0
C3=G3+P3G2+P3P2G1+P3P2P1C0
C4=G4+P4G3+P4P3G2+P4P3P2G1+P4P3P2P1C0
Gi = Ai · Bi
Pi = Ai  Bi
CMOS Digital Integrated Circuits
FET Scaling in Domino CMOS Gates

The transient performance can be improved by adjusting
the nMOS transistor sizes in the pull-down path to reduce
the discharge time.
VDD

D
Mp
C
B
A
Vout
CL
A
B
C
R0
D
Me
52
R1 1
0
C0
C1
CL
CMOS Digital Integrated Circuits
The nMOS Scaling in Domino CMOS Gates
R0







53
0
R1 1
V1=V0=VDDVDDe-1 after time T1
C0
C1 CL
T1 =R0(C0+C1+CL)+R1(C1+CL)
Let the last nMOS is increased by a fraction of ∆k then
C1 C1(1+∆k); R1 R1/(1+∆k)
T1 =R0(C0+C1+CL)+R1(C1+CL)+(C1-R1CL/R0)∆k
If
CL<(R0/R1)C1
T1 decreases by decreasing the size of the last nMOS.
R0/R1 is the number of series-connected nMOS minus one, times a factor
γ that takes the many effects that makes a real nMOS different from a
linear resistor, into account. Using the approximation γ=1/2, we conclude
If CL<C1(N-1)/2 is satisfied, the overall delay can be reduced by
decreasing the size of last nMOS.
The above result can be iteratively applied to the other transistors, which
leads to graded sizing of all nMOS devices.
CMOS Digital Integrated Circuits
NORA CMOS Logic (NP-Domino Logic)
VDD
VDD


nMOS
Logic


nMOS
Logic
pMOS
Logic
to nMOS stage
nMOS stage
precharge
pMOS stage
pre-discharge
VDD
all stages
evaluate
to pMOS stage
nMOS stage
precharge
pMOS stage
pre-discharge
all stages
evaluate
• Advantages
» An Inverter is not required at the output of stages
» Allow pipelined system architecture
• Disadvantages: Also suffer from charge sharing and leakage
54
CMOS Digital Integrated Circuits
NORA CMOS Logic (NP-Domino Logic)
Examples
VDD

VDD

VDD

• =L: nMOS precharges to H, and pMOS pre-discharges to L.
• =L→H: All cascaded nMOS and pMOS logic stages evaluate
one after the other.
55
CMOS Digital Integrated Circuits
NORA CMOS Logic (NP-Domino Logic)
Examples (Cont.)
• Pipelined System Architecture: See Fig. 9.39 – Use of CMOS2
latches (three state latches storing on logic inputs.)
• Zipper Logic: See Fig. 9.40 – Identical to NORA except for
weird clock signals that keep precharge devices weakly on to
handle charge leakage and charge sharing
56
CMOS Digital Integrated Circuits
Pipelined True Single-Phase Clock (TSPC) Dynamic CMOS
VDD
VDD
VDD

VDD


nMOS
Logic
N-block

pMOS
Logic
to next N-block
P-block
Using tristate inverters between stages decouples the stages and enables pipelined operation
• =L: nMOS blocks precharge to VDD
pMOS blocks evaluate by selective pull-up to VDD
• =H: pMOS blocks pre-discharge to VDD
nMOS blocks evaluate by selective pull-down to 0V
•  is not used, no clock skew problem can arise.
• Provide similar performance to NORA structure
57
CMOS Digital Integrated Circuits
TSPC-Based Rising Edge-triggered D-type Flip-Flop
VDD

D
VDD
VDD
VDD

Q

• Need only 11 transistors.
• Static Edge Triggered D Flip-flop (see Fig. 8.30) need 16 transistors.

Common Advantages of dynamic Logic Styles
• Smaller area than fully static gates.
• higher speed: smaller parasitic capacitances.
• Glitch free operation if design carefully
58
CMOS Digital Integrated Circuits
Summary
• Full complementary static logic is best option in the majority of
CMOS circuits.
» Noise-immunity is not sensitive to kn/kp
» Does not involve precharge of nodes
» Dissipate no DC power
» Layout can be automated
» Large fan-in gates lead to complex circuit structures (2N
transistors)
» Larger parasitics
» Slower and higher dynamic power dissipation than alternatives
» No clock
59
CMOS Digital Integrated Circuits
Summary (Cont.)
• Pseudo-nMOS static logic finds widest utility in large fan-in
NOR gates.
» Require only N+1 transistors for N fan-in
» Smaller parasitics
» Faster and lower dynamic power dissipation than full CMOS
» Noise immunity sensitive to kn/kp
» Dissipate DC power when pulled down
» Not well suited for automated layout
» No clock
60
CMOS Digital Integrated Circuits
Summary (Cont.)
• CMOS domino logic should be used for low-power, high speed
applications
» Require only N+k transistors for N fan-in, size advantages of
pseudo-nMOS.
» Dissipate no DC power
» Noise immunity is not sensitive to kn/kp
» Use of clocks enables synchronous operation
» Rely on storage on soft node
» Require exhaustive simulation at all the process corners to insure
proper operation
» Some of the speed advantage over static gates is diminished by
the required per-charge (pre-discharge) time.
61
CMOS Digital Integrated Circuits