What is Plasma
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Transcript What is Plasma
PVD (Physical Vapor Deposition )
Technology
tsmc FAB 14
吳佳俊
© 2010 TSMC, Ltd
Outline
What is Plasma
Convention PVD Process (DC plasma)
DC Plasma PVD bottle neck
What is RF ( Radio frequency )
PVD Chamber H/W Evolution
Metal line process overview
tsmc introduction
EE responsibility
Q&A
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What is Plasma ?
電 Electrical Particles
漿 Collective motion
It contains highly reactive gas species
It emits light glow (O2->whitish-blue, N2->pink)
It is driven by electric energy electric field
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Plasma Components
Created by current through a gas
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Gas is partially ionized
Quasi-neutral plasma
Nearly equal numbers of positive (
) and negative (
)
Basic Plasma Concept
Ionization
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Initially, very few electrons are present in neutral gas
The electrons are accelerated by energy input
Newly produced electrons accelerate and ionize more neutrals
Ionized avalanche happened
Equi-potential cloud plasma is formed
Basic Plasma Concept
Excitation-Relaxation
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Light is emitted
Basic Plasma Concept
Dissociation
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When an electron collides with a molecule with enough energy
Break its bonding energy into apart
Much less energy than ionization
Much higher dissociation rate than ionization
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DC Plasma
Initiation of The Plasma
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Plasma is formed when an avalanche of ionization occurs
This results in a sea of positive and negative charged particles
The gas into plasmas transition involves going from insulating
medium to conductive medium
Basic Plasma Concept
Steady plasma source
Energetic electron (Plasma type)
Appropriate collision (Recipe)
Plasma sustain (Geometry design)
PVD
Dry-ETCH
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HDP-CVD
PVD(Physical Vapor Deposition) Process
(DC plasma Deposition)
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Sputtering
Momentum transfer will dislodge surface atom off
About 70% energy converts to heat
About 25% energy generates secondary electrons
Secondary electrons ionize Ar
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DC Magnets Sputtering
Film Uniformity
High target utilization
Full face erosion
Plasma ignition & sustaining
Step coverage
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DC Magnets Sputtering
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Convention PVD (DC Plasma)
Target (Metal source)
Plasma
Gas
Pump
Pedestal
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Convention PVD Process
Ion generated & toward a target
Atoms sputter from target
Sputtered atoms traverse to substrate
Condense
Nucleated
Form a film
-V
Pedestal
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Film Growth Overview
Formation of isolated nuclei
Island formation
Formation continuous film grain boundaries
Grain growth
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DC Sputtering Deposition Schematic
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DC Plasma PVD Bottle Neck
Aspect Ratio (h/w)
Step Coverage
W
h
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SiO2
Collimator PVD
Lower deposition rate
Potential Particle issue
Shorter PM cycle
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Long throw PVD
Lower deposition rate
Worse film uniformity
Shorter PM cycle
L
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PVD(Physical Vapor Deposition) Process
(RF plasma Deposition)
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What is RF ?
AC frequencies
RF
audio
20 kHz
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microwave
300 MHz
Radio frequency
13.56MHz
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Radio
Frequency
Why need to use AC Plasma ?
Step Coverage Ration
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DC Biasing of RF
RF power couples through the wafer like a
capacitor
On-average, the wafer is biased negative
(attracts ions)
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AC Capacitive Discharge
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Bias Effect
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What is RF Power?
Existing metrology only measures in 1-D:
Power (watts)
However we know: Watts = Volts * Amps * cos(
and Power is actually a 3 - D quantity:
phase
current
voltage
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)
RF Power
Forward Power
Power from RF generator
Reflected Power
Power return to RF generator
Load Power
Power consumed by load
Direction Coupler
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Impedance (Z)
Made up of two parts
Resistance
Reactance (Capacitive & Inductive)
Most RF generator are designed to operate into
a 50 load
Plasma impedance ZL dependent on Power
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Gas pressure and chemistry
Power level and frequency
Chamber materials and geometry’s
Maximum Power Theorem
Maximum power when ZS = ZL
RF generator ZS = (50 j0)
ZS ZL Reflected power increased
RF tuner is required to transform ZS = ZL
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RF Matching Network
Manual match
Auto match
Air capacitor (for low power / fast response)
Vacuum capacitor (for high power / low response)
Fixed match
The most fast response / acceptable reflected power at certain
VSWR
Switching match (fast response)
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IMP (Ion Metal Plasma) Chamber
DC RF source generate
Medium density Plasma
Add coil DC
Coil sputtering,
blocking capacitor
Increase pedestal bias
potential
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Incident Angle Distribution
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PVD Technology Trend
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SIP Technology
Self ionized Plasma
Sputter discharge in which the dominate ionized
species is from the target
Higher ionization rate and enough self-sputter
yield to sustain plasma without Ar gas
Plasma Characteristics
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High power
Low pressure
SIP Process
Large wafer to target spacing
Leads to “long-throw” directional trajectories for neutral
Unbalance Magnet
Control ion trajectories
Cooled, biased substrate
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SIP EnCoRe Cu
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SIP EnCoRe Cu
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PVD Technology Evolution
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Metal Line Process Overview
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AMAT EnCoRe Barrier/Cu Seed
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AMAT EnCoRe Barrier/Cu Seed
PVD 3
(TaN)
PVD 4
(Cu)
Ta
Ch D
(PC II)
Ch F
(Degas)
SWLL
B
TaN
FI
LP 2
SWLL
A
PVD 2
(TaN)
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PVD 1
(Cu)
Ch E
Ch C
(PC II) (Degas)
LP 1
ECP (Electric Chemical Plating)
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NVLS Sabre ECP
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NVLS Sabre ECP
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CMP (Chemical Mechanical Polish)
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AMAT Reflexion CMP
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Introduction of tsmc
tsmc (Taiwan Semiconductor Manufacturing Company)
成立於1987年
董事長兼總執行長 張忠謀 博士
專業積體電路製造
二座 12“ 超大型晶圓廠 (GIGA fab) (fab 12 & 14)
四座 8“晶圓廠 (fab 3, 5, 6 & 8)
一座 6“晶圓廠 (fab 2)
二家海外子公司 (美國WaferTech & 台積電(中國))
照明、太陽能(新事業群)
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The Responsibility of Equipment Engineer
設備的醫生
預防保養 (健康檢查)
Trouble shooting (治療疾病)
防範未然 (上工治未病,史記 扁鵲倉公傳)
Innovation
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Productivity
Cost
設備工程師招募
今年底前可投入職場者 (畢業& 役畢)
[email protected]
[email protected]
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Q&A
Thanks You
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Home Work
What is plasma and its components?
What are the benefit of DC magnets sputtering?
How many types do PVD chambers have?
How many types do RF matching have?
Please description the process flow and
purpose in barrier/Cu seed deposition.
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