Transcript 7. Singulus_Sevilla_Sept10

SINGULUS NDT
September 2010
-1-
TIMARIS
Linear Dynamic Deposition Technology
for
Production of Spintronic Devices
W. Maass, B. Ocker, J. Langer
Singulus Technologies AG, Germany
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
Singulus – The Company
 Public traded:
 Employees WW:
SINGULUS NDT
September 2010
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SNG
572
Germany, Kahl am Main near Frankfurt
(Singulus Group at December 31st, 2009;
487 FTE after divestiture of Hamatech APE)
 Revenue WW:
116.6 mio € (2009)
 Sales/Service:
Locations WW
 Core Business:
Optical Media
 Diversification:
Solar (Acquisition of Stangl AG)
Business Unit
Nano Deposition Technologies (NDT)
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS
Motivation:
 Essential part of many Spintronic Devices are
TMR (or GMR) layer stacks
 These layer stacks have to be prepared and
manufactured on Ø200mm or Ø300mm wafers
 R&D as well as Production related criteria will
apply for any deposition tool to be used
 The special design of these TMR Layer stacks
require a specialized deposition system
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
SINGULUS NDT
September 2010
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SINGULUS NDT
September 2010
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MRAM Technology: Field Induced Switching
Free Layer 1
(CoFe, CoFeB)
5-15 nm
Capping Layer (Ta)
Free Layer 2 (NiFe)
Barriere
(MgO, Al2O3)
Pinned Layer 2 (Co60Fe40)
AAF Spacer (Ru)
Antiferromagnet (PtMn, IrMn)
2-3 nm
0.8-1.5 nm
0.4-1.5 nm
2-3 nm
0.7 nm
2-3 nm
Pinned Layer 1 (CoFe)
Seed Layer 2 (NiFe)
Seed Layer 1 (Ta, NiFeCr)
2-5 nm
10-25 nm
2-5 nm
Contact (Cu, Al)
Buffer (Ta)
40-60 nm
2-5 nm
8 different materials (or even more ??) in the TMR layer stack !
Production of MRAM and Spintronic Devices on Ø200 mm or Ø300 mm wafers!
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Typical R&D / Production Criteria
SINGULUS NDT
September 2010
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TMR Wafer Production (MRAM and Spintronic Devices)
Requirements for the Deposition Process
 Tight Thickness Control of Ultra-Thin Films
 Thinnest Film < 0.1 nm; Smallest Thickness Step: < 0.01 nm
 Reliable & effective manufacturing of multi – layers of sub – nanometer
individual thickness including ferromagnetic films
 Very stable and reliable TMR performance  High MgO deposition rate
 In – situ wafer annealing
 Heating up to 600°C and cooling prior to deposition of certain films
 Extremely short latency between heating/cooling and deposition
 Process advantage for L01 formation in perpendicular TMR designs
 High Yield/Wafer by uniform TMR & Magnetic Properties Full flexibility
regarding PVD – mode for all targets: DC, pulsed DC, RF
 Throughput, Cost of Ownership
 Particle, Contamination, ...
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: LDD Process technology
SINGULUS NDT
September 2010
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Deposition technique: Linear PVD Magnetron
and linear movement of wafer:
Magnet Array
Linear Dynamic Deposition (LDD)
Wafer
• Short Target-Substrate Distance:
- Good Coating Efficiency
• Thickness adjusted by wafer speed:
- Tight control & repeatability
• Multi-directional coating:
- Smooth films and Interfaces
Sputter Target
Deposition Area
• Leakage field of cathode parallel to wafer
travel direction:
Ideal symmetry for magnetic film
applications
-
Wafer Travel
• Stationary Aligning Magnetic Field (AMF):
Static DepRate
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
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AMF can be optimized with cathode
-
Robust and reliable design
TIMARIS
SINGULUS NDT
September 2010
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300/200/150/100mm PVD Bridge System
A Proven Deposition Tool for
TFH, MRAM and other
Semiconductor Applications
TIMARIS
TIMARIS: 30 years of Experience
In its history the NDT team has designed, built and run different
types of production tools (PVD, IBD, CVD) for
 Thin Film Head Manufactering (e.g. Ferro – Magnetic films and film stacks)
 Flat Panel Display (large area deposition)
Semiconductor
(e.g.
ITRSWorkshop
on Emerging
SpinMetallization)
and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Photography
SINGULUS NDT
September 2010
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Multi Target Module
Top: Target Drum with 10
rectangular cathodes; Drum
design ensures easy
maintenance;
Bottom: Main part of the
chamber containing LDD
equipment
RF – Equipment
(Match – Box,
RF - Switches)
Soft-Etch Module
(PreClean, Surface
Treatment)
Transport Module
(UHV wafer handler MX700)
Cassette Modules
(according to
Customer request)
Ultra – High – Vacuum Design:
Base Pressure  5*10-9 Torr (Deposition Chamber)
High Throughput:
 10 Wafer/Hour (NiFe 2.5nm/CoFe70 250nm)
High Tool Availability:
Maintenance friendly Design
High Reliability:
Solid and Well Engineered Design  Up-Time: 90%, MTBF: 150h, MTTR:  3h
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Example for Layout
Tool Configuration for advanced Thin Film Head or
Semiconductor R&D:
•Processing of wafers up to Ø300mm
2 x Multi-Target-Modules with 10
Targets each
1 x Combi-Process-Module
(CPM)
1 x Rotating Substrate Module
(RSM) w/ one PVD and one
Ion Source
ASYS UHV Transport Module
incl. single port EFEM/FOUP
21 PVD cathodes in one system
(configuration can be modified
according to customer request)
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
SINGULUS NDT
September 2010
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TIMARIS: Modularity
Rotating Substrate Module (RSM):
 Rotating substrate deposition
 Tilting of substrate wrt. process direction
 Multiple process options depending on the installed process
equipment (not all of the shown options can be combined):
 Up to six (6) PVD cathodes (DC, pulsed DC, RF), target
diameter 125mm (5”) or below w/ cathode shutters
 Up to two (2) PVD cathodes (DC, pulsed DC, RF), target
diameter 320mm (12”) w/ cathode shutters
 One (1) Ion source according to specification
 Thin film characterization metrology
 Substrate heating (up to 450°C)
 Remote plasma / Natural (O2) oxidation
 Co – sputtering
 Con – focal sputtering
 Cathode – Substrate – Distance can be changed (by adapter)
 Base pressure 10-8 Torr
 In-situ Aligning Magnetic Field
(1 RSM
module in
design
phase toSpin
be manufactured)
ITRS
Workshop
on
Emerging
and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
SINGULUS NDT
September 2010
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TIMARIS: LDD Process technology
Magnetic Requirements:
SINGULUS NDT
September 2010
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Example: Seed/Fe70Co 250nm
Alignment across Wafer
MOKE measurements, 49 points,
Specification:
Measured alignment of the Easy
Axis across wafer:
Easy Axis deviation < +/- 2°
TIMARIS
250
CoFe
Seed
Y - position [mm]
200
150
100
50
50
100
150
X - position [mm]
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
200
250
Comparison with Competition
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September 2010
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Process technology by Circular Cathodes
Example: Seed/Fe70Co 250nm deposited not by TIMARIS
MOKE measurements, 49 points,
CoFe
Alignment of the Easy Axis across wafer
Seed
250.0
Y position [mm]
200.0
150.0
100.0
50.0
50.0
100.0
150.0
200.0
X position [mm]
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
250.0
Remark: The shown data are to
demonstrate the principal issues related
with the discussed deposition technology.
It is not argued, that certain process
results cannot be achieved at all with the
respective technology!
TIMARIS: MgO – TMR, Summary
MgO – Barrier, TMR vs. RA:
Typical layer stack: Ta5/PtMn20/CoFe2.3/Ru0.8/CoFeB2.2/MgO1.2/CoFeB3.0/Ta10 (nm)
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
SINGULUS NDT
September 2010
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TIMARIS: Uniformity of RF sputtered MgO
SINGULUS NDT
September 2010
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3 Ta / 16 PtMn / 2.5 CoFe30 / 0.85 Ru / 2.4 Co40Fe40B20 / rf-MgO / 2.0 Co40Fe40B20 / 10 Ta
5Wµm²:
1.4
parallel stage movement
(Lead: 5 Ta / 50 CuN / 3 Ta / 50 CuN)
1.2
RA uniformity : 3.8% (1)
MR uniformity : 3.2% (1)
RA [normalized]
1.0
0.8
MgO :
Ø300mm
thickness: 0.84 nm
th. uniformity: 0.025 nm (MaxMin)
th. uniformity: 0.61% (1)
0.6
5Ohmµm²
0.4
26Ohmµm²
0.2
0.0
-150
RA: 2.9%
RA: 3.2%
-100
-50
0
50
100
150
perpendicular
Distance from centre [mm]
26Wµm²:
(Lead: 5 Ta / 30 CuN /)
1.4
RA uniformity : 4.1% (1)
parallel
MR uniformity
: 2.8% (1)
perpendicular stage movement
1.2
RA [normlized]
1.0
0.8
MgO :
thickness: 1.06 nm
th. uniformity: 0.03 nm (MaxMin)
th. uniformity: 0.53% (1)
0.6
5Ohmµm²
0.4
0.2
0.0
-150
26Ohmµm²
RA: 3.7%
RA: 4.3%
-100
-50
0
50
100
150
Distance from centre [mm]
Annealing: 1.0 Tesla, 360°C, 2h
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
Perpendicular Magnetic Anisotropy (PMA)
SINGULUS NDT
September 2010
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PMA: Sub / Seed / [Co (0.3nm)/ Pd (1.0nm)] x 3/ Ta (10 nm)
VSM measurements
Field annealing: 1.0 Tesla, 300°C, 2h
Perpendicular to
plane
In-plane
TIMARIS: very tight control of Co and Pd thickness to adjust perpendicular
anisotropy
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: MgO – TMR, Wedge Technology
Deposition of Wedge-Films by
LDD Technology
Variable film thickness across
wafer for thickness optimization
by changing wafer speed during
deposition.
Range 1.0nm to 2.0nm is example
only !!
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
SINGULUS NDT
September 2010
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TIMARIS: MgO – TMR, Wedge Technology
SINGULUS NDT
September 2010
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Layer stacks:
Etch/5Ta/50CuN/3Ta/50CuN/3Ta/16PtMn/2CoFe30 /0.9Ru/2.3Co40Fe40B20/wedge MgO/2.3Co40Fe40B20/
10Ta/30CuN/7Ru (nm)  Co40Fe40B20 (A), (B)
Etch/5Ta/45CuN/3Ta/45CuN/3Ta/16PtMn/2CoFe30 /0.9Ru/2.3Co60Fe20B20/wedge MgO/2.3Co60Fe20B20/
10Ta/30CuN/7Ru (nm)
Wedge Technology:
20 – 30 data points with
different MgO thickness by
deposition of one wafer
only
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Substrate Heating Technology
(Patent pending)
TMR with Perpendicular Magnetic Anisotropy (PMA)
Deposition of different materials on hot substrates:
Goal  short temperature transitions
Principle:
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
SINGULUS NDT
September 2010
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TIMARIS: Substrate Heating Technology
(Patent pending)
SINGULUS NDT
September 2010
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TMR with Perpendicular Magnetic Anisotropy (PMA)
Deposition of different materials on hot substrates:
 Temperatures up to 450°C
250
 Short heating and cooling
time
Closed loop ctrl
300
200
150
Heater ON
Temperature [°C]
Goal  short temperature transitions
Experimental result (example):
100
50
 Heating and cooling within
the deposition module 
resulting in very short
latency time between
heating/cooling and
deposition
Heating
Cool down
0
0
100
200
300
Time [sec]
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
400
TIMARIS: Substrate Heating Technology
(Patent pending)
Heating Experiments :
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September 2010
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Conditions:
 Substrate: Ø200mm Si wafer
Short temperature rise time
Heat-up Time [s]
 Extra data point: 100nm Ru coated
( not calibrated)
60
 Power of heater: 50%
50
 Temperature start point: 100°C
40
 Closed loop control: not optimized
30
20
10
0
0
200
400
600
800
Temperature Setpoint [°C]
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Substrate Heating Technology
(Patent pending)
SINGULUS NDT
September 2010
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Heating Experiments :
Temperature rise time, effect of
coating:
Conditions:

600
Pyrometer tempertaure [°C]
500
400
Substrate:
a)
Ø200mm Si wafer
b)
Ø200mm Si wafer + 100nm Ru
( not adjusted)

Temperature start point: approx.
100°C

Closed loop control: not optimized
300
200
blank Si wafer
Si Wafer + 100nm Ru
100
0
0
10
20
30
40
50
60
heat up time [s]
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Substrate Heating Technology
(Patent pending)
SINGULUS NDT
September 2010
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Heating Experiments :
Cooling after heating
Conclusion:
 Temperature drop has to be
considered
 Deposition of approx. 3nm of
ferromagnetic material can be
done in ca. 15 sec.
Conditions:
 Substrate: Ø200mm Si wafer
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
TIMARIS: Gradient Concentration Alloy films
(Patent pending)
SINGULUS NDT
September 2010
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Adjustment of alloy concentration for TMR films with
Perpendicular Magnetic Anisotropy (LDD – Technology)
Deposition of FexPd(1-x) or FexPt(1-x) as well as other alloys requires in
many cases a carefully adjustment of the material concentration to
get the best device performance.
TIMARIS’ “Gradient Concentration Alloy” capability allows to deposit
films on wafers with varying concentration across the wafer. The
gradient of this concentration variation can be adjusted.
Fe - rich
ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla
Pd - rich
SINGULUS NDT
September 2010
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ITRS Workshop on Emerging Spin and Carbon Based
Emerging Logic Devices, Sept. 17, 2010, Sevilla