Power-Aware High-Speed ADC in Deep Submicron
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Transcript Power-Aware High-Speed ADC in Deep Submicron
文化大學電機系2011年先進電機電子科技研討會
設計於深次微米CMOS製程之功率感知高速類比數位轉換積體電路
(Power-Aware High-Speed ADC in Deep Submicron CMOS)
台大電機系 陳信樹副教授
National Taiwan University
Department of Electrical Engineering
Outline
Motivation
High-speed ADC IC design example
Digitally-assisted algorithm and architecture
Circuit implementation
Experimental results
Summary
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NTUEE ; Mixed-Signal IC Lab
High-Speed ADC Applications
Ref [1]
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Power-Aware High-Speed ADC Trends
Power / Energy
Higher resolution requires more energy to achieve.
Speed / Bandwidth
Resolution and speed are trade-offs.
Bottleneck
SAR architecture saves power and chip area, but speed is limited
by its conversion algorithm.
Pipelined architecture achieves high speed by concurrent
operations, but OPAs consume considerable power.
Digitally assisted ADCs
Digitally assisted algorithm alleviates analog circuit requirement;
therefore, it takes advantages of advanced processes to trade
little digital power to gain the benefits from analog part.
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High-Speed ADC Energy vs. SNDR
1.E+07
1.E+06
P/fs [pJ]
1.E+05
1.E+04
1.E+03
1.E+02
ISSCC 2010
VLSI 2010
ISSCC 1997-2009
VLSI 1997-2009
FOM=100fJ/conv-step
FOM=10fJ/conv-step
1.E+01
1.E+00
1.E-01
10
20
30
40
50
60
70
80
90
100
110
120
SNDR [dB]
Energy is proportional to resolution (SNDR).
FOM (Power / (Sample rate * 2ENOB)) is an indicator to compare different ADC designs.
State-of-the-art ADC designs approach 10fJ/c.s. Current world record is 4fJ/c.s.
Ref [2]
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High-Speed ADC Bandwidth vs. SNDR
1.E+11
ISSCC 2010
VLSI 2010
ISSCC 1997-2009
VLSI 1997-2009
Jitter=1psrms
Jitter=0.1psrms
1.E+10
BW [Hz]
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
10
20
30
40
50
60
70
80
90
100 110 120
SNDR [dB]
Bandwidth is inverse proportional to resolution (SNDR).
State-of-the-art high-speed high-resolution ADCs are limited by clock jitter around
0.1psrms.
Ref [2]
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Experiment 1 - Low-Power High-Speed Two-Step ADC
Shared Resister Ladder
Clock Generator
MDAC1
Vin
3b
Flash
CADC
15
Encoder
and
Digital
Correction
Logic
7
MDAC2
4b
Flash
FADC1
4b
Flash
FADC2
6b
Technology
Resolution
Active area
Supply voltage
Sample rate
SFDR (Fin@Nq)
SNR (Fin@Nq)
SNDR (Fin@Nq)
Power
FoM
0.13μm
6-bit
0.16mm2
1.2V
1-GS/s
40.7dB
33.8dB
33.7dB
49mW
1.24pJ/c.s.
15
Rearrange the timing of two-channel MDACs and apply a
self-timing technique to alleviate comparator comparison
time and charge injection disturbance
Slightly increases CADC accuracy to ease OPA signal
swing design
Ref [3]
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Experiment 2 - Low-Power High-Speed Sub-range SAR ADC
Vinp
Vinn
Vrp
Vrn
Sub Range
Capacitor Array
6b
Fine
Clock
Capacitor
array
output
6b
6b
Coarse
Analog
Circuit
Sample
Gain
Control
6b Registers + overlapping logic
State Control
Technology
Resolution
Active area
Supply voltage
Sample rate
SFDR (Fin@Nq)
SNR (Fin@Nq)
SNDR (Fin@Nq)
Power
FoM
0.13μm
12-bit
0.096mm2
1.2V
10MS/s
69.8dB
61.2dB
59.7dB
3mW
0.38pJ/c.s.
Digital Error Correction Circuit
12b
Relieve MSB accuracy requirement by the sub-range
concept with overlapping
Reduce total input capacitance by using the double-unitsized coupling-capacitor
Ref [4]
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Experiment 3 - Low-Power High-Speed SAR ADC
Technology
Resolution
Chip area
Supply voltage
Sample rate
SFDR (Fin@Nq)
SNDR (Fin@Nq)
Power
FoM
90nm
10-bit
1.029mm2
1.0V
40MS/s
61.9dB
54.1dB
1.34mW
81.1fJ/c.s.
Attain high conversion speed by adopting non-constant-radix
switching method
Compared to conventional non-binary designs, its DAC
implementation is simpler.
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Experiment 4 - Low-Power High-Speed Pipelined ADC
1
VREF
2
Calibration Sequence Controller
7b SA
Registers
VIN
ClockBoost
Input
Switch
7b SA
Registers
7b SA
Registers
7
7
7
2.5b Stage
with
Calibration
Capacitor
2.5b Stage
with
Calibration
Capacitor
2.5b Stage
with
Calibration
Capacitor
3
Calibration
Comparator
2.5b Stage
3
3
2b SubADC
2
3
Digital Error Correction
Dout
Technology
Resolution
Active area
Supply voltage
Sample rate
SFDR (Fin@Nq)
SNDR (Fin@Nq)
Power
FoM
90nm
10-bit
0.21mm2
1.2V
320MS/s
66.7dB
51.2dB
42mW
0.44pJ/c.s.
10
Achieve high speed with a low-gain OPA by using digitallyassisted architecture, thus the OPAs have excellent power
efficiency
A simple gain-error self calibration method without external
precise references requires only 168 calibration clock cycles.
Ref [5]
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Digitally-Assisted High-Speed ADC Example (Experiment 4)
Digitally assisted architecture is future trend to achieve excellent
power efficiency.
10b, several hundreds MS/s Pipeline ADCs are widely used in
wireless and cloud computing systems but suffer from OPA design
in deep submicron CMOS processes.
Decreased OPA DC gain
Smaller signal swing
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Pipeline ADC Accuracy
OPA gain
Less Ro of MOSFET in advanced technologies
Reduced gain from each stage of OPA
More gain stages introduce poles and decrease bandwidth.
For 10b accuracy, the 1st stage MDAC requires 66dB OPA DC gain.
Capacitor mismatch
Raw matching can attain 10b accuracy, not an issue!
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Closed-Loop Gain Error
A
1
1
ACL
,
1 A 1 1/ A
For finite A, closed-loop gain ACL is smaller than ideal gain, 1/.
Gain error can be compensated by adjusting .
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MDAC Gain Error
Sub-ADC
Cs
Cs
Cf
Vos
8
Cp
Cs
+Vout
A
-Vout
8 comp.
+Vref -Vref
Vout
8
V
8C C f C p
8Cs
Vin Di ref s
Vos , Di 1, C f 2Cs
8Cs C f C p
8
8Cs
i 1
Cf
A
Due to finite A, closed-loop gain is less than ideal value of 4.
adjustment is proposed to correct MDAC gain error.
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Proposed MDAC with a Calibration Capacitor
Sub-ADC
Cs
Ccal
Cs
Cf
Vos
8
Cp
Cs
+Vout
A
-Vout
8 comp.
+Vref -Vref
A calibration capacitor, Ccal, is added as a positive feedback to adjust .
Closed-loop gain can achieve 10b accuracy with low DC gain A of 30dB.
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Self-Calibrated Algorithm (1)
UnderCalibration
MDAC
Vin
Σ
Ideal
MDAC
Σ
AV
1
Vref
8
Calibration
Comparator
Ideal
MDAC
Vout
Σ
To SAR
Controller
4
4
3
Vref
8
3
Vref
8
1
Vref
2
Self-calibrated procedure starts with the last stage MDAC.
After MDAC is calibrated, it is treated as “ideal” MDAC.
Ideal MDACs subtract 3Vref/8 and then multiply 4.
Under-Calibration MDAC samples Vref/8 and then multiplies 4.
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Self-Calibrated Algorithm (2) – Gain Error
Vout ,under _ calibration (
Vref
8
) (4 AV )
AV : gain error
3Vref
Vref AV Vref
Vref
Vout ,1stage _" ideal " (
) (4 AV ) (
) 4
8
2
2
8
Vref AV Vref 4
Vref AV Vref 3Vref
Vout ,2 stage _"ideal "
) 4
(
2
8
2
2
2
Vout ," N " stage _"ideal "
Vref
2
AV Vref 4 N 1
2
N : number of MDAC stages
Output is Vref/2 when no gain error
Using successive approximation method with iterations, the closed-loop
gain reaches 4 with 10b accuracy.
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Proposed ADC Architecture
1
VREF
2
Calibration Sequence Controller
7b SA
Registers
VIN
ClockBoost
Input
Switch
7b SA
Registers
7b SA
Registers
7
7
7
2.5b Stage
with
Calibration
Capacitor
2.5b Stage
with
Calibration
Capacitor
2.5b Stage
with
Calibration
Capacitor
3
Calibration
Comparator
2.5b Stage
3
3
3
2b SubADC
2
Digital Error Correction
Dout
10
On-chip foreground analog self-calibrated technique
Gain errors of first three stages are calibrated
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Calibration Step
Opamp
input 2Cs
Cs
Cs
4Cs 2Cs Cs
8Cs 4Cs 2Cs Cs
2Cs
b6
b5
b4
b3
b2
b1
b0
Opamp
output
128 calibration steps
Each step affects 0.14 % of MDAC gain (~4) with OPA gain of 40dB
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Calibration Range
120
Output Error= +1 LSB
110
Output Error= -1 LSB
Calibration Step
100
90
80
70
60
50
40
30
20
10
0
30
35
40
45
50
55
60
65
Open-Loop Gain (dB)
Ccal in this work can calibrate OPA with a minimum DC gain of 30dB
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OPA
VDD
Vcmfb1
Vcmfb2
CALb
VINP
VOP
VON
CALb
VINN
Vb1
Vb2
Use small L to increase bandwidth without considering gain
Calibration mode has more compensation capacitance
Simulation results: DC gain 40dB, closed-loop BW 1.36GHz
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Chip Micrograph
0.21mm2 active area in 90 nm low-power CMOS
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Measured DNL
Before calibration
After calibration
Before calibration: +1.7 / -1.0 LSB
After calibration: +0.7/-0.6 LSB
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Measured INL
Before calibration
After calibration
Before calibration: +15.6/-15.2 LSB
After calibration: +0.8/-0.9 LSB
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Measured Dynamic Performance
At low Fin, SNDR ≈ 54.2dB, ENOB ≈ 8.7bit
At Nyquist Fin, SNDR ≈ 51.2dB, ENOB ≈ 8.2bit
ERBW ≈ 160MHz
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Measured FFT
SNDR ≈ 52.8dB and SFDR ≈ 57.8dB when Fs = 320MHz and Fin =
128MHz
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Measured Performance Summary
JSSC09 [7]
Technology (nm)
90
Calibration Method
Foreground
Sample Rate (MS/s)
500
Resolution (bit)
10
DNL/INL (LSB)
0.4/1.0
Peak SNDR (dB)
55.8
SNDR (dB) at Fs/2
53
SFDR (dB)
Power (mW)
55
FoM (fJ/c.-s.)
301
Active Area (mm2)
0.49
Note
Calibration
circuit is offchip
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ISSCC07 [8]
130
Foreground
/Background
205
10
0.15/0.6
56
56
73.5
92.5
881
0.52
Input buffer
power is
included
This Work
90
Foreground
320
10
0.7/0.9
54.2
51.2
66.7
42
442
0.21
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Summary
A simple self-calibrated algorithm is proposed to correct gain error
resulting from low gain OPA in deep submicron CMOS.
The self-calibrated process does not require a precise external
reference and can be done within only 168 clock cycles.
Smallest active area of 0.21mm2 in 90nm CMOS including
calibration circuit
The prototype ADC achieves 320MS/s conversion rate, 8.7 ENOB
and only consumes 42mW. Nice power efficiency is obtained.
Power efficiency is the key to high-speed ADC IC designs.
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Reference
[1] http://www.analog.com/library/analogdialogue/archives/39-06/architecture.html
[2] B. Murmann, "ADC Performance Survey 1997-2010," [Online]. Available:
http://www.stanford.edu/~murmann/adcsurvey.html
[3] H. Chen et al., “A 1-GS/s 6-Bit Two-Channel Two-Step ADC in 0.13-mm CMOS,” IEEE
J. Solid-State Circuits, vol. 44, no. 11, pp. 3051-3059, Nov. 2009.
[4] H. Chen et al., “A 3mW 12b 10MS/s Sub-Range SAR ADC” in IEEE Asian Solid-State
Circuits Conf. Dig. Tech. Papers, Taipei, Taiwan, pp. 153-156, Nov. 2009.
[5] H. Chen et al., “A 10b 320MS/s Self-Calibrated Pipeline ADC” in IEEE Asian SolidState Circuits Conf. Dig. Tech. Papers, Peking, China, pp. 173-176, Nov. 2010.
[6] B. Razavi and B. A. Wooley, “Design Techniques for High-Speed, High-Resolution
Comparators,” IEEE J. Solid-State Circuits, vol. 27, no. 12, pp. 1916-1926, Dec. 1992.
[7] A. Verma and B. Razavi, ”A 10b 500MHz 55mW CMOS ADC,” IEEE J. Solid-State
Circuits, vol. 44, no. 11, pp. 3039-3050, Nov. 2009.
[8] B. Hernes et al.,”A 92.5mW 205MS/s 10b Pipeline IF ADC Implemented in 1.2V/3.3V
0.13mm CMOS,” ISSCC Dig. Tech. Papers, pp. 462-463, Feb. 2007.
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